頁 7 - 電晶體 - FET、MOSFET - RF | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - RF

記錄 3,855
頁  7/129
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製造商
描述
封裝
庫存
數量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA212001F/1 P4
Infineon Technologies

IC FET RF LDMOS 200W H-37260-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 15.8dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37260-2
封裝: 2-Flatpack, Fin Leads, Flanged
庫存5,920
2.14GHz
15.8dB
30V
10µA
-
1.6A
50W
65V
2-Flatpack, Fin Leads, Flanged
H-37260-2
BF5030WE6327HTSA1
Infineon Technologies

MOSFET N-CH 8V 25MA SOT-343

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 24dB
  • Voltage - Test: 3V
  • Current Rating: 25mA
  • Noise Figure: 1.3dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
封裝: SC-82A, SOT-343
庫存3,456
800MHz
24dB
3V
25mA
1.3dB
10mA
-
8V
SC-82A, SOT-343
PG-SOT343-4
MMRF2007NR1
NXP

FET RF 2CH 70V 940MHZ

  • Transistor Type: LDMOS
  • Frequency: 940MHz
  • Gain: 32.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60mA
  • Power - Output: 35W
  • Voltage - Rated: 70V
  • Package / Case: TO-270-16 Variant, Flat Leads
  • Supplier Device Package: TO-270 WBL-16
封裝: TO-270-16 Variant, Flat Leads
庫存2,416
940MHz
32.6dB
28V
-
-
60mA
35W
70V
TO-270-16 Variant, Flat Leads
TO-270 WBL-16
BLF6G22L-40P,118
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT1121A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: 16A
  • Noise Figure: -
  • Current - Test: 410mA
  • Power - Output: 13.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121A
  • Supplier Device Package: CDFM4
封裝: SOT-1121A
庫存7,536
2.11GHz ~ 2.17GHz
19dB
28V
16A
-
410mA
13.5W
65V
SOT-1121A
CDFM4
BLF6G27L-40P,112
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT1121A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 12W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121A
  • Supplier Device Package: CDFM4
封裝: SOT-1121A
庫存7,424
2.5GHz ~ 2.7GHz
17.5dB
28V
-
-
450mA
12W
65V
SOT-1121A
CDFM4
MRF8P20100HR3
NXP

FET RF 2CH 65V 2.03GHZ NI780H-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.03GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 20W
  • Voltage - Rated: 65V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
封裝: NI-780-4
庫存7,680
2.03GHz
16dB
28V
-
-
400mA
20W
65V
NI-780-4
NI-780-4
BLF6G20S-230PRN,11
Ampleon USA Inc.

RF FET LDMOS 65V SOT539B

  • Transistor Type: LDMOS
  • Frequency: -
  • Gain: -
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 65W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
封裝: SOT539B
庫存3,936
-
-
28V
-
-
2A
65W
65V
SOT539B
SOT539B
2N5246_J35Z
Fairchild/ON Semiconductor

JFET N-CH 30V 7MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 7mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
庫存4,208
-
-
-
7mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot MRF19030LR3
NXP

FET RF 65V 1.96GHZ NI-400

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 13dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: NI-400
  • Supplier Device Package: NI-400
封裝: NI-400
庫存4,352
1.96GHz
13dB
26V
-
-
300mA
30W
65V
NI-400
NI-400
MRF9180R5
NXP

FET RF 65V 880MHZ NI-1230

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 17.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 170W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
封裝: NI-1230
庫存2,160
880MHz
17.5dB
26V
-
-
1.4A
170W
65V
NI-1230
NI-1230
MRF5S19130HSR5
NXP

FET RF 65V 1.99GHZ NI-880S

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 13dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 26W
  • Voltage - Rated: 65V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
封裝: NI-880S
庫存3,200
1.93GHz ~ 1.99GHz
13dB
28V
-
-
1.2A
26W
65V
NI-880S
NI-880S
SD56120M
STMicroelectronics

FET RF 65V 860MHZ M252

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 16dB
  • Voltage - Test: 32V
  • Current Rating: 14A
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 120W
  • Voltage - Rated: 65V
  • Package / Case: M252
  • Supplier Device Package: M252
封裝: M252
庫存7,152
860MHz
16dB
32V
14A
-
400mA
120W
65V
M252
M252
BLF546,112
Ampleon USA Inc.

RF FET 2 NC 65V 13DB SOT268A

  • Transistor Type: 2 N-Channel (Dual) Common Source
  • Frequency: 500MHz
  • Gain: 13dB
  • Voltage - Test: 28V
  • Current Rating: 9A
  • Noise Figure: -
  • Current - Test: 80mA
  • Power - Output: 80W
  • Voltage - Rated: 65V
  • Package / Case: SOT-268A
  • Supplier Device Package: CDFM4
封裝: SOT-268A
庫存4,800
500MHz
13dB
28V
9A
-
80mA
80W
65V
SOT-268A
CDFM4
PTVA101K02EVV1R0XTMA1
Infineon Technologies

IC AMP RF LDMOS H-36275-4

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 900W
  • Voltage - Rated: 105V
  • Package / Case: H-36275-4
  • Supplier Device Package: H-36275-4
封裝: H-36275-4
庫存6,816
1.03GHz ~ 1.09GHz
21dB
50V
-
-
150mA
900W
105V
H-36275-4
H-36275-4
A2T18H410-24SR6
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.81GHz
  • Gain: 17.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 71W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
封裝: NI-1230-4LS2L
庫存6,640
1.81GHz
17.4dB
28V
-
-
800mA
71W
65V
NI-1230-4LS2L
NI-1230-4LS2L
BLF8G10LS-270V,118
Ampleon USA Inc.

RF FET LDMOS 65V 19.5DB SOT1244B

  • Transistor Type: LDMOS
  • Frequency: 871.5MHz ~ 891.5MHz
  • Gain: 19.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 67W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244B
  • Supplier Device Package: CDFM6
封裝: SOT-1244B
庫存2,848
871.5MHz ~ 891.5MHz
19.5dB
28V
-
-
2A
67W
65V
SOT-1244B
CDFM6
BLP10H6120PGY
Ampleon USA Inc.

BLP10H6120PG/SOT1224/REELDP

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,648
-
-
-
-
-
-
-
-
-
-
hot MRF8S9100HSR3
NXP

FET RF 70V 920MHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 920MHz
  • Gain: 19.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 72W
  • Voltage - Rated: 70V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封裝: NI-780S
庫存8,412
920MHz
19.3dB
28V
-
-
500mA
72W
70V
NI-780S
NI-780S
LET9060
STMicroelectronics

IC RF POWER MOSFET N-CH PWRSO10

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 17.2dB
  • Voltage - Test: 28V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 60W
  • Voltage - Rated: 80V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
封裝: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
庫存7,360
960MHz
17.2dB
28V
12A
-
300mA
60W
80V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
150-501N04A-00
IXYS

RF MOSFET N-CHANNEL DE150

  • Transistor Type: N-Channel
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 25µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 200W
  • Voltage - Rated: 500V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE150
封裝: 6-SMD, Flat Lead Exposed Pad
庫存6,512
100MHz
-
-
25µA
-
-
200W
500V
6-SMD, Flat Lead Exposed Pad
DE150
BLC9G20LS-240PVZ
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT12753

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 240W
  • Voltage - Rated: 65V
  • Package / Case: SOT1275-3
  • Supplier Device Package: SOT1275-3
封裝: SOT1275-3
庫存6,036
1.81GHz ~ 1.88GHz
18dB
28V
-
-
1.6A
240W
65V
SOT1275-3
SOT1275-3
hot MRF6V2150NR1
NXP

FET RF 110V 220MHZ TO-270-4

  • Transistor Type: LDMOS
  • Frequency: 220MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 150W
  • Voltage - Rated: 110V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
封裝: TO-270AB
庫存3,888
220MHz
25dB
50V
-
-
450mA
150W
110V
TO-270AB
TO-270 WB-4
MHT1005HSR3
NXP

RF MOSFET LDMOS NI780S

  • Transistor Type: LDMOS
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BLF989ESU
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT539B

  • Transistor Type: LDMOS
  • Frequency: 470MHz ~ 700MHz
  • Gain: 20dB
  • Voltage - Test: 50 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 1000W
  • Voltage - Rated: 108 V
  • Package / Case: SOT-539B
  • Supplier Device Package: SOT539B
封裝: -
庫存309
470MHz ~ 700MHz
20dB
50 V
2.8µA
-
600 mA
1000W
108 V
SOT-539B
SOT539B
MRF21060R3
Freescale Semiconductor

RF MOSFET LDMOS 28V NI780

  • Transistor Type: LDMOS
  • Frequency: 2.1GHz ~ 2.2GHz
  • Gain: 12.5dB
  • Voltage - Test: 28 V
  • Current Rating: 6µA
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 60W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-957A
  • Supplier Device Package: NI-780H-2L
封裝: -
Request a Quote
2.1GHz ~ 2.2GHz
12.5dB
28 V
6µA
-
500 mA
60W
65 V
SOT-957A
NI-780H-2L
1012GN-800V
Microchip Technology

RF MOSFET GAN 54V 55-KR

  • Transistor Type: GaN
  • Frequency: 1.025GHz ~ 1.15GHz
  • Gain: 19.3dB
  • Voltage - Test: 54 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 120 mA
  • Power - Output: 825W
  • Voltage - Rated: 150 V
  • Package / Case: 55-KR
  • Supplier Device Package: 55-KR
封裝: -
Request a Quote
1.025GHz ~ 1.15GHz
19.3dB
54 V
-
-
120 mA
825W
150 V
55-KR
55-KR
RF5L051K0CB4
STMicroelectronics

RF MOSFET LDMOS 50V D4E

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 21dB
  • Voltage - Test: 50 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 1000W
  • Voltage - Rated: 110 V
  • Package / Case: D4E
  • Supplier Device Package: D4E
封裝: -
Request a Quote
500MHz
21dB
50 V
1µA
-
200 mA
1000W
110 V
D4E
D4E
3N203
Solid State Inc.

RF MOSFET TO72

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: -
  • Gain: 25dB
  • Voltage - Test: -
  • Current Rating: 15mA
  • Noise Figure: 5.3dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25 V
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
封裝: -
Request a Quote
-
25dB
-
15mA
5.3dB
-
-
25 V
TO-206AF, TO-72-4 Metal Can
TO-72
GTRB266502FC-V1-R2
MACOM Technology Solutions

RF MOSFET HEMT H-37248C-4

  • Transistor Type: HEMT
  • Frequency: 2.62GHz ~ 2.69GHz
  • Gain: 14dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 630W
  • Voltage - Rated: 48 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
封裝: -
Request a Quote
2.62GHz ~ 2.69GHz
14dB
-
-
-
-
630W
48 V
H-37248C-4
H-37248C-4
GTRA364002FC-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 48V H-37248C-4

  • Transistor Type: HEMT
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 13dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 220 mA
  • Power - Output: 400W
  • Voltage - Rated: 125 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
封裝: -
庫存150
3.4GHz ~ 3.6GHz
13dB
48 V
-
-
220 mA
400W
125 V
H-37248C-4
H-37248C-4