頁 4 - Infineon Technologies 產品 - 電晶體 - IGBT - 單 | 黑森爾電子
聯繫我們
SalesDept@heisener.com +86-755-83210559-836
登入/註冊
Language Translation

* Please refer to the English Version as our Official Version.

BOM
購物車 0

Infineon Technologies 產品 - 電晶體 - IGBT - 單

記錄 1,429
頁  4/48
圖片
零件編號
製造商
描述
封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IGP20N65H5XKSA1
Infineon Technologies

IGBT 650V 42A TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 42 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 125 W
  • Switching Energy: 170µJ (on), 60µJ (off)
  • Input Type: Standard
  • Gate Charge: 48 nC
  • Td (on/off) @ 25°C: 18ns/156ns
  • Test Condition: 400V, 10A, 32Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3-1
封裝: -
庫存1,308
650 V
42 A
60 A
2.1V @ 15V, 20A
125 W
170µJ (on), 60µJ (off)
Standard
48 nC
18ns/156ns
400V, 10A, 32Ohm, 15V
-
-
Through Hole
TO-220-3
PG-TO220-3-1
IGD15N65T6ARMA1
Infineon Technologies

IGBT TRENCH FS 650V 30A TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 57.5 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
  • Power - Max: 100 W
  • Switching Energy: 230µJ (on), 110µJ (off)
  • Input Type: Standard
  • Gate Charge: 37 nC
  • Td (on/off) @ 25°C: 30ns/117ns
  • Test Condition: 400V, 11.5A, 47Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: -
庫存1,944
650 V
30 A
57.5 A
1.9V @ 15V, 11.5A
100 W
230µJ (on), 110µJ (off)
Standard
37 nC
30ns/117ns
400V, 11.5A, 47Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
IKY150N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 160A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 160 A
  • Current - Collector Pulsed (Icm): 600 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
  • Power - Max: 621 W
  • Switching Energy: 2.3mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 300 nC
  • Td (on/off) @ 25°C: 44ns/343ns
  • Test Condition: 400V, 150A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 65 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-2
封裝: -
庫存624
650 V
160 A
600 A
1.65V @ 15V, 150A
621 W
2.3mJ (on), 2.9mJ (off)
Standard
300 nC
44ns/343ns
400V, 150A, 10Ohm, 15V
65 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-2
IKD15N60RC2ATMA1
Infineon Technologies

IGBT TRENCH FS 600V 28A TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 28 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
  • Power - Max: 115.4 W
  • Switching Energy: 570µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 72 nC
  • Td (on/off) @ 25°C: 18ns/374ns
  • Test Condition: 400V, 15A, 49Ohm, 15V
  • Reverse Recovery Time (trr): 129 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: -
庫存13,224
600 V
28 A
45 A
2.3V @ 15V, 15A
115.4 W
570µJ (on), 350µJ (off)
Standard
72 nC
18ns/374ns
400V, 15A, 49Ohm, 15V
129 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
SIGC07T60SNCX1SA4
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 24ns/248ns
  • Test Condition: 400V, 6A, 50Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
6 A
18 A
2.5V @ 15V, 6A
-
-
Standard
-
24ns/248ns
400V, 6A, 50Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC07T60SNCX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 24ns/248ns
  • Test Condition: 400V, 6A, 50Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
6 A
18 A
2.5V @ 15V, 6A
-
-
Standard
-
24ns/248ns
400V, 6A, 50Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC07T60SNCX1SA3
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 24ns/248ns
  • Test Condition: 400V, 6A, 50Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
6 A
18 A
2.5V @ 15V, 6A
-
-
Standard
-
24ns/248ns
400V, 6A, 50Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IHW25N140R5LXKSA1
Infineon Technologies

IGBT 1400V 68A TO247-44

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1400 V
  • Current - Collector (Ic) (Max): 68 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
  • Power - Max: 246 W
  • Switching Energy: -, 110µJ (off)
  • Input Type: Standard
  • Gate Charge: 150 nC
  • Td (on/off) @ 25°C: -/195ns
  • Test Condition: 25V, 25A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-44
封裝: -
庫存696
1400 V
68 A
75 A
1.9V @ 15V, 25A
246 W
-, 110µJ (off)
Standard
150 nC
-/195ns
25V, 25A, 2.2Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-44
SIGC08T60EX1SA2
Infineon Technologies

IGBT TRENCH FS 600V 15A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
15 A
45 A
1.9V @ 15V, 15A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
SIGC08T60EX1SA1
Infineon Technologies

IGBT TRENCH FS 600V 15A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
15 A
45 A
1.9V @ 15V, 15A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
AIKBE50N65RF5ATMA1
Infineon Technologies

IGBT TRENCH FS 650V 96A TO263-7

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 96 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 326 W
  • Switching Energy: 0.12mJ (on), 0.09mJ (off)
  • Input Type: Standard
  • Gate Charge: 108 nC
  • Td (on/off) @ 25°C: 16.8ns/136ns
  • Test Condition: 400V, 25A, 9Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package: PG-TO263-7-U04
封裝: -
庫存201
650 V
96 A
150 A
2.1V @ 15V, 50A
326 W
0.12mJ (on), 0.09mJ (off)
Standard
108 nC
16.8ns/136ns
400V, 25A, 9Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7-U04
IKN01N60RC2ATMA1
Infineon Technologies

IGBT 600V 2.2A SOT223-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 2.2 A
  • Current - Collector Pulsed (Icm): 3 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1A
  • Power - Max: 5.1 W
  • Switching Energy: 25.1µJ (on), 13.5µJ (off)
  • Input Type: Standard
  • Gate Charge: 9 nC
  • Td (on/off) @ 25°C: 5.6ns/80ns
  • Test Condition: 400V, 1A, 49Ohm, 15V
  • Reverse Recovery Time (trr): 59.5 ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-3
封裝: -
庫存8,133
600 V
2.2 A
3 A
2.3V @ 15V, 1A
5.1 W
25.1µJ (on), 13.5µJ (off)
Standard
9 nC
5.6ns/80ns
400V, 1A, 49Ohm, 15V
59.5 ns
-40°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-3
SIGC61T60NCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 65ns/170ns
  • Test Condition: 300V, 75A, 3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
75 A
225 A
2.5V @ 15V, 75A
-
-
Standard
-
65ns/170ns
300V, 75A, 3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IKW40N65ET7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 76A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 76 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A
  • Power - Max: 230.8 W
  • Switching Energy: 1.05mJ (on), 590µJ (off)
  • Input Type: Standard
  • Gate Charge: 235 nC
  • Td (on/off) @ 25°C: 20ns/310ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 85 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: -
庫存2,730
650 V
76 A
120 A
1.65V @ 15V, 40A
230.8 W
1.05mJ (on), 590µJ (off)
Standard
235 nC
20ns/310ns
400V, 40A, 10Ohm, 15V
85 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IGC11T120T8LX1SA1
Infineon Technologies

IGBT 1200V 8A SAWN ON FOIL

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 24 A
  • Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 8A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
1200 V
-
24 A
2.07V @ 15V, 8A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKW50N120CS7XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 82A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 82 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 428 W
  • Switching Energy: 2.8mJ (on), 2.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 290 nC
  • Td (on/off) @ 25°C: 29ns/170ns
  • Test Condition: 600V, 50A, 2.3Ohm, 15V
  • Reverse Recovery Time (trr): 165 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: -
庫存1,347
1200 V
82 A
150 A
2V @ 15V, 50A
428 W
2.8mJ (on), 2.2mJ (off)
Standard
290 nC
29ns/170ns
600V, 50A, 2.3Ohm, 15V
165 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IQFH39N04NM6ATMA1
Infineon Technologies

TRENCH <= 40V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SIGC28T60SEX1SA2
Infineon Technologies

IGBT 3 CHIP 600V

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
50 A
150 A
2.05V @ 15V, 50A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
AIMDQ75R040M1HXUMA1
Infineon Technologies

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存2,250
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKZA40N120CS7XKSA1
Infineon Technologies

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存609
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKFW60N65ES5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 77A HSIP247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 77 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
  • Power - Max: 138 W
  • Switching Energy: 1.23mJ (on), 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 20ns/127ns
  • Test Condition: 400V, 50A, 8.2Ohm, 15V
  • Reverse Recovery Time (trr): 77 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-HSIP247-3-2
封裝: -
庫存15
650 V
77 A
200 A
1.7V @ 15V, 50A
138 W
1.23mJ (on), 550µJ (off)
Standard
120 nC
20ns/127ns
400V, 50A, 8.2Ohm, 15V
77 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-HSIP247-3-2
IKZA75N65SS5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
  • Power - Max: 395 W
  • Switching Energy: 240µJ (on), 750µJ (off)
  • Input Type: Standard
  • Gate Charge: 164 nC
  • Td (on/off) @ 25°C: 22ns/145ns
  • Test Condition: 400V, 75A, 5.6Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-3
封裝: -
庫存858
650 V
80 A
300 A
1.7V @ 15V, 75A
395 W
240µJ (on), 750µJ (off)
Standard
164 nC
22ns/145ns
400V, 75A, 5.6Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-3
IKW50N60TAFKSA1
Infineon Technologies

IGBT TRENCH/FS 600V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 333 W
  • Switching Energy: 2.6mJ
  • Input Type: Standard
  • Gate Charge: 310 nC
  • Td (on/off) @ 25°C: 26ns/299ns
  • Test Condition: 400V, 50A, 7Ohm, 15V
  • Reverse Recovery Time (trr): 143 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
封裝: -
Request a Quote
600 V
80 A
150 A
2V @ 15V, 50A
333 W
2.6mJ
Standard
310 nC
26ns/299ns
400V, 50A, 7Ohm, 15V
143 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
AIGB40N65H5ATMA1
Infineon Technologies

DISCRETE SWITCHES

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
封裝: -
庫存195
650 V
40 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
IKU04N60R
Infineon Technologies

IGBT TRENCH 600V 8A TO251-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 8 A
  • Current - Collector Pulsed (Icm): 12 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 75 W
  • Switching Energy: 240µJ
  • Input Type: Standard
  • Gate Charge: 27 nC
  • Td (on/off) @ 25°C: 14ns/146ns
  • Test Condition: 400V, 4A, 43Ohm, 15V
  • Reverse Recovery Time (trr): 43 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
  • Supplier Device Package: PG-TO251-3
封裝: -
Request a Quote
600 V
8 A
12 A
2.1V @ 15V, 4A
75 W
240µJ
Standard
27 nC
14ns/146ns
400V, 4A, 43Ohm, 15V
43 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-251-3 Short Leads, IPAK, TO-251AA
PG-TO251-3
IKW75N65ET7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
  • Power - Max: 333 W
  • Switching Energy: 2.17mJ (on), 1.23mJ (off)
  • Input Type: Standard
  • Gate Charge: 435 nC
  • Td (on/off) @ 25°C: 28ns/310ns
  • Test Condition: 400V, 75A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 100 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: -
庫存1,362
650 V
80 A
225 A
1.65V @ 15V, 75A
333 W
2.17mJ (on), 1.23mJ (off)
Standard
435 nC
28ns/310ns
400V, 75A, 4.7Ohm, 15V
100 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IPF011N08NM6ATMA1
Infineon Technologies

TRENCH 40<-<100V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKW75N65SS5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
  • Power - Max: 395 W
  • Switching Energy: 450µJ (on), 750µJ (off)
  • Input Type: Standard
  • Gate Charge: 164 nC
  • Td (on/off) @ 25°C: 22ns/145ns
  • Test Condition: 400V, 75A, 5.6Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: -
庫存630
650 V
80 A
300 A
1.7V @ 15V, 75A
395 W
450µJ (on), 750µJ (off)
Standard
164 nC
22ns/145ns
400V, 75A, 5.6Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
SIGC81T60NCX1SA5
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 95ns/200ns
  • Test Condition: 300V, 100A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
100 A
300 A
2.5V @ 15V, 100A
-
-
Standard
-
95ns/200ns
300V, 100A, 2.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC81T60NCX1SA3
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 95ns/200ns
  • Test Condition: 300V, 100A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
100 A
300 A
2.5V @ 15V, 100A
-
-
Standard
-
95ns/200ns
300V, 100A, 2.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die