頁 20 - Rohm Semiconductor 產品 - 電晶體 - FET、MOSFET - 單 | 黑森爾電子
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Rohm Semiconductor 產品 - 電晶體 - FET、MOSFET - 單

記錄 1,247
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零件編號
製造商
描述
封裝
庫存
數量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
RQ6L020SPTCR
Rohm Semiconductor

MOSFET P-CH 60V 2A TSMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封裝: -
庫存62,280
MOSFET (Metal Oxide)
60 V
2A (Ta)
4V, 10V
3V @ 1mA
7.2 nC @ 5 V
750 pF @ 10 V
±20V
-
1.25W (Ta)
210mOhm @ 2A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
RTR025N03HZGTL
Rohm Semiconductor

MOSFET N-CH 30V 2.5A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
封裝: -
庫存61,047
MOSFET (Metal Oxide)
30 V
2.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
4.6 nC @ 4.5 V
220 pF @ 10 V
±12V
-
700mW (Ta)
92mOhm @ 2.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
RS6N120BHTB1
Rohm Semiconductor

NCH 80V 120A, HSOP8, POWER MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.9mOhm @ 60A, 6V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
封裝: -
庫存5,058
MOSFET (Metal Oxide)
80 V
120A (Tc)
6V, 10V
4V @ 1mA
53 nC @ 10 V
3420 pF @ 40 V
±20V
-
104W (Tc)
4.9mOhm @ 60A, 6V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
RD3P175SNTL1
Rohm Semiconductor

MOSFET N-CH 100V 17.5A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 8.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
庫存41,373
MOSFET (Metal Oxide)
100 V
17.5A (Ta)
4V, 10V
2.5V @ 1mA
24 nC @ 10 V
950 pF @ 25 V
±20V
-
20W (Tc)
105mOhm @ 8.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
SCT3080ARHRC15
Rohm Semiconductor

650V, 30A, 4-PIN THD, TRENCH-STR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 134W
  • Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
封裝: -
庫存1,335
MOSFET (Metal Oxide)
650 V
30A (Tc)
18V
5.6V @ 5mA
48 nC @ 18 V
571 pF @ 500 V
+22V, -4V
-
134W
104mOhm @ 10A, 18V
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
R8005ANJGTL
Rohm Semiconductor

NCH 800V 5A POWER MOSFET : R8005

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263S
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封裝: -
庫存5,952
MOSFET (Metal Oxide)
800 V
5A (Tc)
10V
5V @ 1mA
20 nC @ 10 V
500 pF @ 25 V
±30V
-
120W (Tc)
2.1Ohm @ 2.5A, 10V
150°C (TJ)
Surface Mount
TO-263S
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RV5L030GNTCR1
Rohm Semiconductor

MOSFET N-CH 30V 3A DFN1616-6

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RUC002N05HZGT116
Rohm Semiconductor

MOSFET N-CH 50V 200MA SST3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SST3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: -
庫存2,610
MOSFET (Metal Oxide)
50 V
200mA (Ta)
1.2V, 4.5V
1V @ 1mA
-
25 pF @ 10 V
±8V
-
350mW (Ta)
-
150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
R6006KND4TL1
Rohm Semiconductor

600V 2.8A SOT-223-3, HIGH-SPEED

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 12.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 870mOhm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-3
  • Package / Case: TO-261-3
封裝: -
庫存11,985
MOSFET (Metal Oxide)
600 V
2.8A (Tc)
10V
5.5V @ 1mA
12 nC @ 10 V
350 pF @ 25 V
±20V
-
12.3W (Tc)
870mOhm @ 2A, 10V
150°C (TJ)
Surface Mount
SOT-223-3
TO-261-3
R6024KNXC7G
Rohm Semiconductor

600V 24A TO-220FM, HIGH-SPEED SW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
封裝: -
庫存2,910
MOSFET (Metal Oxide)
600 V
24A (Tc)
10V
5V @ 1mA
45 nC @ 10 V
2000 pF @ 25 V
±20V
-
74W (Tc)
165mOhm @ 11.3A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R6009ENXC7G
Rohm Semiconductor

600V 9A TO-220FM, LOW-NOISE POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
封裝: -
庫存3,000
MOSFET (Metal Oxide)
600 V
9A (Ta)
10V
4V @ 1mA
23 nC @ 10 V
430 pF @ 25 V
±20V
-
48W (Tc)
535mOhm @ 2.8A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RQ3L070ATTB
Rohm Semiconductor

PCH -60V -25A, HSMT8, POWER MOSF

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
封裝: -
庫存19,728
MOSFET (Metal Oxide)
60 V
25A (Tc)
4.5V, 10V
2.5V @ 1mA
48 nC @ 10 V
2850 pF @ 30 V
±20V
-
2W (Ta)
28mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
RV4E031RPTCR1
Rohm Semiconductor

MOSFET P-CH 30V 3.1A DFN1616-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: DFN1616-6W
  • Package / Case: 6-PowerWFDFN
封裝: -
Request a Quote
MOSFET (Metal Oxide)
30 V
3.1A (Ta)
4.5V, 10V
2.5V @ 1mA
4.8 nC @ 5 V
460 pF @ 10 V
±20V
-
1.5W
105mOhm @ 3.1A, 10V
150°C (TJ)
Surface Mount, Wettable Flank
DFN1616-6W
6-PowerWFDFN
R6020ANZFL1C8
Rohm Semiconductor

MOSFET N-CH 600V 20A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
封裝: -
Request a Quote
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V
4.15V @ 1mA
65 nC @ 10 V
2040 pF @ 25 V
±30V
-
120W (Tc)
220mOhm @ 10A, 10V
150°C
Through Hole
TO-3PF
TO-3P-3 Full Pack
RSJ301N10FRATL
Rohm Semiconductor

MOSFET N-CH 100V 30A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封裝: -
庫存3,150
MOSFET (Metal Oxide)
100 V
30A (Ta)
4V, 10V
2.5V @ 1mA
60 nC @ 10 V
2100 pF @ 25 V
±20V
-
50W (Ta)
46mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RXH070N03TB1
Rohm Semiconductor

MOSFET N-CH 30V 7A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: -
庫存5,334
MOSFET (Metal Oxide)
30 V
7A (Ta)
4V, 10V
2.5V @ 1mA
5.8 nC @ 5 V
390 pF @ 10 V
±20V
-
1.4W (Ta)
28mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RSQ015N06HZGTR
Rohm Semiconductor

MOSFET N-CH 60V 1.5A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封裝: -
庫存8,589
MOSFET (Metal Oxide)
60 V
1.5A (Ta)
4V, 10V
2.5V @ 1mA
2 nC @ 5 V
110 pF @ 10 V
±20V
-
950mW (Ta)
290mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
BSS84XHZGG2CR
Rohm Semiconductor

MOSFET P-CH 60V 230MA DFN1010-3W

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.3Ohm @ 230mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1010-3W
  • Package / Case: 3-XFDFN
封裝: -
庫存210
MOSFET (Metal Oxide)
60 V
230mA (Ta)
-
2.5V @ 100µA
-
34 pF @ 30 V
±20V
-
1W (Ta)
5.3Ohm @ 230mA, 10V
150°C (TJ)
Surface Mount
DFN1010-3W
3-XFDFN
RS1E350BNTB1
Rohm Semiconductor

NCH 30V 80A POWER MOSFET: RS1E35

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
封裝: -
庫存7,200
MOSFET (Metal Oxide)
30 V
35A (Ta), 80A (Tc)
4.5V, 10V
2.5V @ 1mA
185 nC @ 10 V
7900 pF @ 15 V
±20V
-
3W (Ta), 35W (Tc)
1.7mOhm @ 35A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
RS6L090BGTB1
Rohm Semiconductor

NCH 60V 90A, HSOP8, POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 73W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
封裝: -
庫存6,258
MOSFET (Metal Oxide)
60 V
90A (Tc)
4.5V, 10V
2.5V @ 1mA
28 nC @ 10 V
1950 pF @ 30 V
±20V
-
3W (Ta), 73W (Tc)
4.7mOhm @ 90A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
RJ1G08CGNTLL
Rohm Semiconductor

MOSFET N-CH 40V 80A LPTL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 31.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 80A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTL
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封裝: -
庫存2,880
MOSFET (Metal Oxide)
40 V
80A (Tc)
4.5V, 10V
2.5V @ 500µA
31.1 nC @ 10 V
2410 pF @ 20 V
±20V
-
78W (Tc)
5.6mOhm @ 80A, 10V
150°C (TJ)
Surface Mount
LPTL
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RQ6E035TNTR
Rohm Semiconductor

MOSFET N-CH 30V 3.5A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封裝: -
庫存8,835
MOSFET (Metal Oxide)
30 V
3.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
6.4 nC @ 4.5 V
285 pF @ 10 V
±12V
-
950mW (Ta)
54mOhm @ 3.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
RS6G120BHTB1
Rohm Semiconductor

NCH 40V 210A, HSOP8, POWER MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 210A (Ta), 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.38mOhm @ 90A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
封裝: -
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MOSFET (Metal Oxide)
40 V
210A (Ta), 120A (Tc)
6V, 10V
4V @ 1mA
67 nC @ 10 V
4790 pF @ 20 V
±20V
-
3W (Ta), 104W (Tc)
1.38mOhm @ 90A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
RS6P060BHTB1
Rohm Semiconductor

NCH 100V 60A, HSOP8, POWER MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 73W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
封裝: -
庫存6,705
MOSFET (Metal Oxide)
100 V
60A (Tc)
6V, 10V
4V @ 1mA
25 nC @ 10 V
1560 pF @ 50 V
±20V
-
3W (Ta), 73W (Tc)
10.6mOhm @ 60A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
SCT3160KLHRC11
Rohm Semiconductor

SICFET N-CH 1200V 17A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 103W
  • Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
封裝: -
庫存1,893
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
18V
5.6V @ 2.5mA
42 nC @ 18 V
398 pF @ 800 V
+22V, -4V
-
103W
208mOhm @ 5A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
RD3L07BATTL1
Rohm Semiconductor

PCH -60V -70A POWER MOSFET - RD3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 101W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.7mOhm @ 70A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
庫存6,819
MOSFET (Metal Oxide)
60 V
70A (Tc)
4.5V, 10V
2.5V @ 1mA
105 nC @ 10 V
6700 pF @ 30 V
±20V
-
101W (Tc)
12.7mOhm @ 70A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RTR030P02HZGTL
Rohm Semiconductor

MOSFET P-CH 20V 3A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 34µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
封裝: -
庫存6,483
MOSFET (Metal Oxide)
20 V
3A (Ta)
2.5V, 4.5V
2V @ 34µA
9.3 nC @ 4.5 V
840 pF @ 10 V
±12V
-
700mW (Ta)
75mOhm @ 3A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
R6007KND3TL1
Rohm Semiconductor

NCH 600V 7A TO-252, HIGH-SPEED S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
庫存7,500
MOSFET (Metal Oxide)
600 V
7A (Tc)
10V
5V @ 1mA
14.5 nC @ 10 V
470 pF @ 25 V
±20V
-
78W (Tc)
620mOhm @ 2.4A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
R6530ENXC7G
Rohm Semiconductor

650V 30A TO-220FM, LOW-NOISE POW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 960µA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
封裝: -
庫存2,934
MOSFET (Metal Oxide)
650 V
30A (Ta)
10V
4V @ 960µA
90 nC @ 10 V
2100 pF @ 25 V
±20V
-
86W (Tc)
140mOhm @ 14.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RS1E220ATTB1
Rohm Semiconductor

MOSFET P-CH 30V 22A/76A 8HSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
封裝: -
庫存32,019
MOSFET (Metal Oxide)
30 V
22A (Ta), 76A (Tc)
4.5V, 10V
2.5V @ 2mA
130 nC @ 10 V
5850 pF @ 15 V
±20V
-
3W (Ta)
4.1mOhm @ 22A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN