頁 8 - Diodes Incorporated 產品 - 電晶體 - 雙極 (BJT) - 單 | 黑森爾電子
聯繫我們
SalesDept@heisener.com 86-755-83210559 x831
Language Translation

* Please refer to the English Version as our Official Version.

Diodes Incorporated 產品 - 電晶體 - 雙極 (BJT) - 單

記錄 1,679
頁  8/56
圖片
零件編號
製造商
描述
封裝
庫存
數量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DXTP3C100PSQ-13
Diodes Incorporated

TRANS PNP 100V 3A POWERDI5060-8

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 360mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V
  • Power - Max: 5 W
  • Frequency - Transition: 125MHz
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type Q)
封裝: -
庫存6,810
3 A
100 V
360mV @ 200mA, 2A
100nA
170 @ 500mA, 10V
5 W
125MHz
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type Q)
ZTX651QSTZ
Diodes Incorporated

PWR MID PERF TRANSISTOR EP3 AMMO

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 1.5 W
  • Frequency - Transition: 175MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
封裝: -
Request a Quote
2 A
60 V
500mV @ 200mA, 2A
100nA (ICBO)
100 @ 500mA, 2V
1.5 W
175MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
FZT949QTA
Diodes Incorporated

PWR LOW SAT TRANSISTOR SOT223 T&

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5.5 A
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 440mV @ 500mA, 5.5A
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
  • Power - Max: 3 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3
封裝: -
Request a Quote
5.5 A
30 V
440mV @ 500mA, 5.5A
50nA
100 @ 1A, 1V
3 W
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
DXTN5860DFDB-7
Diodes Incorporated

SS LOW SAT TRANSISTOR U-DFN2020-

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 315mV @ 300mA, 6A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
  • Power - Max: 690 mW
  • Frequency - Transition: 115MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-3 (Type B)
封裝: -
庫存9,000
6 A
60 V
315mV @ 300mA, 6A
100nA
280 @ 500mA, 2V
690 mW
115MHz
-55°C ~ 150°C (TJ)
Surface Mount
3-UDFN Exposed Pad
U-DFN2020-3 (Type B)
ZXTP19040CGQ-7
Diodes Incorporated

TRANS PNP 40V 3A SOT223-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 1V
  • Power - Max: 1.2 W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3
封裝: -
Request a Quote
3 A
40 V
500mV @ 300mA, 3A
100nA (ICBO)
220 @ 500mA, 1V
1.2 W
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
FMMT411FDBW-7
Diodes Incorporated

SS BIPOLAR TRANSISTORS W-DFN2020

  • Transistor Type: NPN - Avalanche Mode
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 15 V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
  • Power - Max: 1.7 W
  • Frequency - Transition: 110MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-UDFN Exposed Pad
  • Supplier Device Package: W-DFN2020-3 (Type A)
封裝: -
Request a Quote
5 A
15 V
100mV @ 1mA, 10mA
100nA (ICBO)
100 @ 10mA, 10V
1.7 W
110MHz
-55°C ~ 150°C (TJ)
Surface Mount
3-UDFN Exposed Pad
W-DFN2020-3 (Type A)
FMMT494QTA
Diodes Incorporated

TRANS NPN 120V 1A SOT23-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 120 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封裝: -
庫存59,220
1 A
120 V
300mV @ 50mA, 500mA
100nA
100 @ 250mA, 10V
500 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
FMMT494QTC
Diodes Incorporated

TRANS NPN 120V 1A SOT23-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 120 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封裝: -
庫存30,000
1 A
120 V
300mV @ 50mA, 500mA
100nA
100 @ 250mA, 10V
500 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
ZXTN19020DZQTA
Diodes Incorporated

TRANS NPN 20V 7.5A SOT89-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 7.5 A
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 375mA, 7.5A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
  • Power - Max: 1.1 W
  • Frequency - Transition: 160MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
封裝: -
庫存798
7.5 A
20 V
200mV @ 375mA, 7.5A
100nA
300 @ 100mA, 2V
1.1 W
160MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
ZXT13N50DE6QTA
Diodes Incorporated

PWR LOW SAT TRANSISTOR SOT26 T&R

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 230mV @ 100mA, 4A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
  • Power - Max: 1.1 W
  • Frequency - Transition: 115MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
封裝: -
Request a Quote
4 A
50 V
230mV @ 100mA, 4A
100nA
300 @ 1A, 2V
1.1 W
115MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
DSS60601MZ4Q-13
Diodes Incorporated

TRANS PNP 120V 0.7A MPT3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 700 mA
  • Voltage - Collector Emitter Breakdown (Max): 120 V
  • Vce Saturation (Max) @ Ib, Ic: 360mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
  • Power - Max: 500 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MPT3
封裝: -
庫存5,910
700 mA
120 V
360mV @ 50mA, 500mA
1µA (ICBO)
120 @ 100mA, 5V
500 mW
300MHz
150°C (TJ)
Surface Mount
TO-243AA
MPT3
BCP5416QTA
Diodes Incorporated

PWR MID PERF TRANSISTOR SOT223 T

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 2 W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3
封裝: -
Request a Quote
1 A
45 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
2 W
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
FZT2222ATA
Diodes Incorporated

TRANS NPN SW 40V 600MA SOT-223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 2 W
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3
封裝: -
Request a Quote
600 mA
40 V
1V @ 50mA, 500mA
-
100 @ 150mA, 10V
2 W
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
DXTP07100BFGQ-7
Diodes Incorporated

PWR MID PERF TRANSISTOR POWERDI3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 1.1 W
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
封裝: -
庫存5,940
2 A
100 V
500mV @ 200mA, 2A
50nA (ICBO)
100 @ 500mA, 2V
1.1 W
140MHz
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerVDFN
PowerDI3333-8 (SWP) Type UX
DXTN03060BFG-7
Diodes Incorporated

PWR MID PERF TRANSISTOR POWERDI3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
  • Power - Max: 1.2 W
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
封裝: -
Request a Quote
6 A
60 V
260mV @ 300mA, 6A
100nA
100 @ 2A, 2V
1.2 W
140MHz
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
8-PowerVDFN
PowerDI3333-8 (SWP) Type UX
FMMT495QTA
Diodes Incorporated

SS MID-PERF TRANSISTOR SOT23 T&R

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封裝: -
庫存9,000
1 A
150 V
300mV @ 50mA, 500mA
100nA
10 @ 1A, 10V
500 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MMBTA92Q-7-F
Diodes Incorporated

SS MID-PERF TRANSISTOR SOT23 T&R

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
  • Power - Max: 300 mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封裝: -
庫存27,000
500 mA
300 V
500mV @ 2mA, 20mA
250nA (ICBO)
40 @ 10mA, 10V
300 mW
50MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BC857BTQ-7
Diodes Incorporated

TRANS PNP 45V 0.1A SOT523

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 150 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
封裝: -
庫存9,000
100 mA
45 V
650mV @ 5mA, 100mA
15nA (ICBO)
220 @ 2mA, 5V
150 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
ZTX857QSTZ
Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR EP3 AM

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 600mA, 3A
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
  • Power - Max: 1.2 W
  • Frequency - Transition: 80MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
封裝: -
Request a Quote
3 A
300 V
250mV @ 600mA, 3A
50nA
100 @ 500mA, 10V
1.2 W
80MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
MMST2907AQ-7
Diodes Incorporated

TRANS PNP 60V 0.6A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 200 mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
封裝: -
庫存2,109
600 mA
60 V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
200 mW
200MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
FZT751QTC
Diodes Incorporated

PWR MID PERF TRANSISTOR SOT223 T

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 2 W
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3
封裝: -
Request a Quote
3 A
60 V
600mV @ 300mA, 3A
100nA (ICBO)
100 @ 500mA, 2V
2 W
140MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
BCX5216QTA
Diodes Incorporated

PWR MID PERF TRANSISTOR SOT89 T&

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
封裝: -
庫存3,000
1 A
60 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
1 W
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
AC847CWQ-7
Diodes Incorporated

TRANS PNP 50V 0.15A UMT3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 200 mW
  • Frequency - Transition: 140MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: UMT3
封裝: -
庫存15,264
150 mA
50 V
500mV @ 5mA, 50mA
100nA (ICBO)
120 @ 1mA, 6V
200 mW
140MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
UMT3
ZXTN2005ZQTA
Diodes Incorporated

TRANS NPN 25V 5.5A SOT89-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5.5 A
  • Voltage - Collector Emitter Breakdown (Max): 25 V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 150mA, 6.5A
  • Current - Collector Cutoff (Max): 20nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 1V
  • Power - Max: 1.5 W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
封裝: -
庫存3,000
5.5 A
25 V
200mV @ 150mA, 6.5A
20nA
300 @ 1A, 1V
1.5 W
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
ZX5T849GTA
Diodes Incorporated

TRANS NPN 30V 7A SOT223-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 7 A
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 220mV @ 300mA, 6.5A
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
  • Power - Max: 3 W
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3
封裝: -
Request a Quote
7 A
30 V
220mV @ 300mA, 6.5A
20nA (ICBO)
100 @ 1A, 1V
3 W
140MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
ZXTP5240F-7
Diodes Incorporated

TRANS PNP 40V 2A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
  • Power - Max: 730 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封裝: -
庫存239,067
2 A
40 V
350mV @ 200mA, 2A
100nA (ICBO)
300 @ 100mA, 2V
730 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
ZTX753QSTZ
Diodes Incorporated

PWR MID PERF TRANSISTOR EP3 AMMO

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1 W
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
封裝: -
Request a Quote
2 A
100 V
500mV @ 200mA, 2A
100nA (ICBO)
-
1 W
140MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
ZXTN07060BGQTC
Diodes Incorporated

Pwr Mid Perf Transistor SOT223 T

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
FZT604TA
Diodes Incorporated

TRANS NPN DAR 100V 1500MA SOT223

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
  • Power - Max: 2 W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3
封裝: -
Request a Quote
1.5 A
100 V
1.5V @ 1mA, 1A
10µA
2000 @ 1A, 5V
2 W
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
ZXTP2009ZQTA
Diodes Incorporated

TRANS PNP 40V 5.5A SOT89-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5.5 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 185mV @ 550mA, 5.5A
  • Current - Collector Cutoff (Max): 20nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 900 mW
  • Frequency - Transition: 152MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
封裝: -
庫存1,590
5.5 A
40 V
185mV @ 550mA, 5.5A
20nA
200 @ 500mA, 2V
900 mW
152MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3