頁 39 - 電晶體 - 雙極 (BJT) - 陣列 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2N3726	Central Semiconductor Corp	TRANS 2PNP 300MA 45V TO78-6 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 200MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	封裝: TO-78-6 Metal Can	庫存14,388	300mA	45V	-	-	135 @ 1mA, 5V	600mW	200MHz	-	Through Hole	TO-78-6 Metal Can	TO-78-6
STD840DN40	STMicroelectronics	TRANS 2NPN 400V 4A 8DIP Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 2A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Power - Max: 3W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	封裝: 8-DIP (0.300", 7.62mm)	庫存7,872	4A	400V	1V @ 400mA, 2A	250µA	8 @ 2A, 5V	3W	-	150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
ULN2803ANG4	Texas Instruments	TRANS 8NPN DARL 50V 0.5A 18DIP Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-PDIP	封裝: 18-DIP (0.300", 7.62mm)	庫存5,280	500mA	50V	1.6V @ 500µA, 350mA	-	-	-	-	-40°C ~ 85°C (TA)	Through Hole	18-DIP (0.300", 7.62mm)	18-PDIP
DMMT5401-TP	Micro Commercial Co	TRANS 2PNP 150V 0.2A SOT363 Transistor Type: 2 PNP (Dual) Matched Pair Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Power - Max: 200mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存4,512	200mA	150V	500mV @ 5mA, 50mA	50nA (ICBO)	60 @ 10mA, 5V	200mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
ZXTDB2M832TA	Diodes Incorporated	TRANS NPN/PNP 20V 4.5A/3.5A 8MLP Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 4.5A, 3.5A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A / 300mV @ 350mA, 3.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V / 150 @ 2A, 2V Power - Max: 1.7W Frequency - Transition: 140MHz, 180MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-MLP (3x2)	封裝: 8-VDFN Exposed Pad	庫存144,000	4.5A, 3.5A	20V	270mV @ 125mA, 4.5A / 300mV @ 350mA, 3.5A	25nA	200 @ 2A, 2V / 150 @ 2A, 2V	1.7W	140MHz, 180MHz	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-MLP (3x2)
UP0460100L	Panasonic Electronic Components	TRANS NPN/PNP 50V 0.1A SSMINI6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 10V / 180 @ 5mA, 10V Power - Max: 125mW Frequency - Transition: 150MHz, 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SSMINI6-F1	封裝: SOT-563, SOT-666	庫存721,872	100mA	50V	300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA	100µA	180 @ 2mA, 10V / 180 @ 5mA, 10V	125mW	150MHz, 80MHz	125°C (TJ)	Surface Mount	SOT-563, SOT-666	SSMINI6-F1
NSVT3946DXV6T1G	ON Semiconductor	TRANS NPN/PNP 40V 0.2A SOT563 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 500mW Frequency - Transition: 300MHz, 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: SOT-563, SOT-666	庫存3,488	200mA	40V	300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA	-	100 @ 10mA, 1V	500mW	300MHz, 250MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
BCV62AE6327HTSA1	Infineon Technologies	TRANS 2PNP 30V 0.1A SOT143 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Power - Max: 300mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	封裝: TO-253-4, TO-253AA	庫存2,048	100mA	30V	650mV @ 5mA, 100mA	15nA (ICBO)	125 @ 2mA, 5V	300mW	250MHz	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	PG-SOT143-4
ZXTC6719MCTA	Diodes Incorporated	TRANS NPN/PNP 50V/40V 4A/3A 8DFN Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 4A, 3A Voltage - Collector Emitter Breakdown (Max): 50V, 40V Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V / 60 @ 1.5A, 2V Power - Max: 1.7W Frequency - Transition: 165MHz, 190MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN (3x2)	封裝: 8-WDFN Exposed Pad	庫存36,000	4A, 3A	50V, 40V	320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A	100nA	100 @ 2A, 2V / 60 @ 1.5A, 2V	1.7W	165MHz, 190MHz	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN (3x2)
PMBT3904VS,115	Nexperia USA Inc.	TRANS 2NPN 40V 0.2A SOT666 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 360mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	封裝: SOT-563, SOT-666	庫存96,000	200mA	40V	300mV @ 5mA, 50mA	50nA (ICBO)	100 @ 10mA, 1V	360mW	300MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-666
2N2920	Microsemi Corporation	TRANS 2NPN 60V 0.03A TO-78 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	封裝: TO-78-6 Metal Can	庫存3,616	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	300 @ 1mA, 5V	350mW	-	200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
EMX18T2R	Rohm Semiconductor	TRANS 2NPN 12V 0.5A 6EMT Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Power - Max: 150mW Frequency - Transition: 320MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: SOT-563, SOT-666	庫存181,248	500mA	12V	250mV @ 10mA, 200mA	100nA (ICBO)	270 @ 10mA, 2V	150mW	320MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
EMT51T2R	Rohm Semiconductor	TRANS 2PNP 20V 0.2A 6EMT Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 150mW Frequency - Transition: 350MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: SOT-563, SOT-666	庫存4,064	200mA	20V	300mV @ 10mA, 100mA	100nA (ICBO)	120 @ 1mA, 6V	150mW	350MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
FMB200	Fairchild/ON Semiconductor	TRANS 2PNP 45V 0.5A SSOT-6 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V Power - Max: 700mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	封裝: SOT-23-6 Thin, TSOT-23-6	庫存2,960	500mA	45V	400mV @ 20mA, 200mA	50nA	100 @ 150mA, 5V	700mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
FMB2907A	Fairchild/ON Semiconductor	TRANS 2PNP 60V 0.6A 6SSOT Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 700mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	封裝: SOT-23-6 Thin, TSOT-23-6	庫存34,440	600mA	60V	1.6V @ 50mA, 500mA	20nA (ICBO)	100 @ 150mA, 10V	700mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
MPQ2222	Central Semiconductor Corp	TRANS 4NPN 40V 0.5A Transistor Type: 4 NPN (Quad) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 30mA, 300mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 650mW Frequency - Transition: 200MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: TO-116	封裝: 14-DIP (0.300", 7.62mm)	庫存94,824	500mA	40V	1.6V @ 30mA, 300mA	50nA (ICBO)	100 @ 150mA, 10V	650mW	200MHz	-65°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	TO-116
CMLT3946EG TR	Central Semiconductor Corp	TRANS ARRAY 60V 0.2A SOT563 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA / 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V / 150 @ 10mA, 1V Power - Max: 150mW Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: SOT-563, SOT-666	庫存81,108	200mA	40V	100mV @ 5mA, 50mA / 200mV @ 5mA, 50mA	-	30 @ 100mA, 1V / 150 @ 10mA, 1V	150mW	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMA204020R	Panasonic Electronic Components	TRANS 2PNP 50V 0.5A MINI6 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V Power - Max: 300mW Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: Mini6-G4-B	封裝: SOT-23-6	庫存78,162	500mA	50V	600mV @ 30mA, 300mA	100nA (ICBO)	120 @ 150mA, 10V	300mW	130MHz	150°C (TJ)	Surface Mount	SOT-23-6	Mini6-G4-B
FC18G-TL	onsemi	NCH J-FET+BIP NPN Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
UPA1436AH-AZ	Renesas Electronics Corporation	POWER BIPOLAR TRANSISTOR NPN Transistor Type: 4 NPN Darlington (Quad) Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 2V Power - Max: 3.5W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 10-SIP Supplier Device Package: 10-SIP	封裝: -	Request a Quote	3A	100V	1.5V @ 1.5mA, 1.5A	1µA (ICBO)	2000 @ 1.5A, 2V	3.5W	-	150°C (TJ)	Through Hole	10-SIP	10-SIP
STA335A	Sanken Electric USA Inc.	TRANS 2NPN 36V 0.10A 8SIP Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 36V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 500mA, 4V Power - Max: 2.5W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-SIP Supplier Device Package: 8-SIP	封裝: -	Request a Quote	2A	36V	500mV @ 5mA, 1A	10µA (ICBO)	500 @ 500mA, 4V	2.5W	-	150°C (TJ)	Through Hole	8-SIP	8-SIP
SBC847CDW1T1	onsemi	TRANS 2NPN 45V 0.1A SOT-363 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 380mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封裝: -	Request a Quote	100mA	45V	600mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	380mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
UPA1454H-AZ	Renesas Electronics Corporation	POWER BIPOLAR TRANSISTOR NPN Transistor Type: 4 NPN (Quad) Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 30mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 1A, 5V Power - Max: 3.5W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 10-SIP Supplier Device Package: 10-SIP	封裝: -	Request a Quote	5A	100V	1.2V @ 30mA, 3A	10µA (ICBO)	800 @ 1A, 5V	3.5W	-	-55°C ~ 150°C (TJ)	Through Hole	10-SIP	10-SIP
MMDT3906Q-7	Diodes Incorporated	General Purpose Transistor SOT36 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 200mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: -	Request a Quote	200mA	40V	400mV @ 5mA, 50mA	50nA	100 @ 10mA, 1V	200mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
JANKCAL2N3810	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	封裝: -	Request a Quote	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
2N5793AU	Microchip Technology	DUAL SMALL-SIGNAL BJT Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 600mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: U	封裝: -	Request a Quote	600mA	40V	900mV @ 30mA, 300mA	10µA (ICBO)	40 @ 150mA, 10V	600mW	-	-65°C ~ 200°C (TJ)	Surface Mount	6-SMD, No Lead	U
JANTX2N2920A	Microchip Technology	DUAL SMALL-SIGNAL BJT Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	封裝: -	Request a Quote	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	300 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
BC846SH-QX	Nexperia USA Inc.	TRANS 2NPN 65V 0.1A 6TSSOP Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 270mW Frequency - Transition: 100MHz Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: -	Request a Quote	100mA	65V	300mV @ 5mA, 100mA	15nA (ICBO)	110 @ 2mA, 5V	270mW	100MHz	175°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
BC817DPN-DG-B3X	Nexperia USA Inc.	TRANSISTOR GEN PURP Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 600mW Frequency - Transition: 100MHz, 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	封裝: -	Request a Quote	500mA	45V	700mV @ 50mA, 500mA	100nA (ICBO)	160 @ 100mA, 1V	600mW	100MHz, 80MHz	150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
CA3096CM96	Harris Corporation	3 NPN, 2 PNP TRANSISTOR ARRAY Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 50mA, 10mA Voltage - Collector Emitter Breakdown (Max): 24V Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA / 400mV, 100µA, 1mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 30 @ 100µA, 5V Power - Max: 200mW Frequency - Transition: 335MHz, 6.8MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封裝: -	Request a Quote	50mA, 10mA	24V	700mV @ 1mA, 10mA / 400mV, 100µA, 1mA	1µA	100 @ 1mA, 5V / 30 @ 100µA, 5V	200mW	335MHz, 6.8MHz	150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC

2N3726

Central Semiconductor Corp

TRANS 2PNP 300MA 45V TO78-6

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 5V
Power - Max: 600mW
Frequency - Transition: 200MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

封裝: TO-78-6 Metal Can

庫存14,388

300mA

45V

-

135 @ 1mA, 5V

600mW

200MHz

-

Through Hole

TO-78-6 Metal Can

TO-78-6

STD840DN40

STMicroelectronics

TRANS 2NPN 400V 4A 8DIP

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 2A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Power - Max: 3W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

封裝: 8-DIP (0.300", 7.62mm)

庫存7,872

4A

400V

1V @ 400mA, 2A

250µA

8 @ 2A, 5V

3W

-

150°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-DIP

ULN2803ANG4

Texas Instruments

TRANS 8NPN DARL 50V 0.5A 18DIP

Transistor Type: 8 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 18-DIP (0.300", 7.62mm)
Supplier Device Package: 18-PDIP

封裝: 18-DIP (0.300", 7.62mm)

庫存5,280

500mA

50V

1.6V @ 500µA, 350mA

-

-40°C ~ 85°C (TA)

Through Hole

18-DIP (0.300", 7.62mm)

18-PDIP

DMMT5401-TP

Micro Commercial Co

TRANS 2PNP 150V 0.2A SOT363

Transistor Type: 2 PNP (Dual) Matched Pair
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 200mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存4,512

200mA

150V

500mV @ 5mA, 50mA

50nA (ICBO)

60 @ 10mA, 5V

200mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

ZXTDB2M832TA

Diodes Incorporated

TRANS NPN/PNP 20V 4.5A/3.5A 8MLP

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 4.5A, 3.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A / 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V / 150 @ 2A, 2V
Power - Max: 1.7W
Frequency - Transition: 140MHz, 180MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-MLP (3x2)

封裝: 8-VDFN Exposed Pad

庫存144,000

4.5A, 3.5A

20V

270mV @ 125mA, 4.5A / 300mV @ 350mA, 3.5A

25nA

200 @ 2A, 2V / 150 @ 2A, 2V

1.7W

140MHz, 180MHz

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

8-MLP (3x2)

UP0460100L

Panasonic Electronic Components

TRANS NPN/PNP 50V 0.1A SSMINI6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 10V / 180 @ 5mA, 10V
Power - Max: 125mW
Frequency - Transition: 150MHz, 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMINI6-F1

封裝: SOT-563, SOT-666

庫存721,872

100mA

50V

300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA

100µA

180 @ 2mA, 10V / 180 @ 5mA, 10V

125mW

150MHz, 80MHz

125°C (TJ)

Surface Mount

SOT-563, SOT-666

SSMINI6-F1

NSVT3946DXV6T1G

ON Semiconductor

TRANS NPN/PNP 40V 0.2A SOT563

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 500mW
Frequency - Transition: 300MHz, 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: SOT-563, SOT-666

庫存3,488

200mA

40V

300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA

-

100 @ 10mA, 1V

500mW

300MHz, 250MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

BCV62AE6327HTSA1

Infineon Technologies

TRANS 2PNP 30V 0.1A SOT143

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT143-4

封裝: TO-253-4, TO-253AA

庫存2,048

100mA

30V

650mV @ 5mA, 100mA

15nA (ICBO)

125 @ 2mA, 5V

300mW

250MHz

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

PG-SOT143-4

ZXTC6719MCTA

Diodes Incorporated

TRANS NPN/PNP 50V/40V 4A/3A 8DFN

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 4A, 3A
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V / 60 @ 1.5A, 2V
Power - Max: 1.7W
Frequency - Transition: 165MHz, 190MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN (3x2)

封裝: 8-WDFN Exposed Pad

庫存36,000

4A, 3A

50V, 40V

320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A

100nA

100 @ 2A, 2V / 60 @ 1.5A, 2V

1.7W

165MHz, 190MHz

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-DFN (3x2)

PMBT3904VS,115

Nexperia USA Inc.

TRANS 2NPN 40V 0.2A SOT666

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 360mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

封裝: SOT-563, SOT-666

庫存96,000

200mA

40V

300mV @ 5mA, 50mA

50nA (ICBO)

100 @ 10mA, 1V

360mW

300MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-666

2N2920

Microsemi Corporation

TRANS 2NPN 60V 0.03A TO-78

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

封裝: TO-78-6 Metal Can

庫存3,616

30mA

60V

300mV @ 100µA, 1mA

10µA (ICBO)

300 @ 1mA, 5V

350mW

-

200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

EMX18T2R

Rohm Semiconductor

TRANS 2NPN 12V 0.5A 6EMT

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Power - Max: 150mW
Frequency - Transition: 320MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: SOT-563, SOT-666

庫存181,248

500mA

12V

250mV @ 10mA, 200mA

100nA (ICBO)

270 @ 10mA, 2V

150mW

320MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6

EMT51T2R

Rohm Semiconductor

TRANS 2PNP 20V 0.2A 6EMT

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 350MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: SOT-563, SOT-666

庫存4,064

200mA

20V

300mV @ 10mA, 100mA

100nA (ICBO)

120 @ 1mA, 6V

150mW

350MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6

FMB200

Fairchild/ON Semiconductor

TRANS 2PNP 45V 0.5A SSOT-6

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V
Power - Max: 700mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

封裝: SOT-23-6 Thin, TSOT-23-6

庫存2,960

500mA

45V

400mV @ 20mA, 200mA

50nA

100 @ 150mA, 5V

700mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

FMB2907A

Fairchild/ON Semiconductor

TRANS 2PNP 60V 0.6A 6SSOT

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 700mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

封裝: SOT-23-6 Thin, TSOT-23-6

庫存34,440

600mA

60V

1.6V @ 50mA, 500mA

20nA (ICBO)

100 @ 150mA, 10V

700mW

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

MPQ2222

Central Semiconductor Corp

TRANS 4NPN 40V 0.5A

Transistor Type: 4 NPN (Quad)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 30mA, 300mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 650mW
Frequency - Transition: 200MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: TO-116

封裝: 14-DIP (0.300", 7.62mm)

庫存94,824

500mA

40V

1.6V @ 30mA, 300mA

50nA (ICBO)

100 @ 150mA, 10V

650mW

200MHz

-65°C ~ 150°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

TO-116

CMLT3946EG TR

Central Semiconductor Corp

TRANS ARRAY 60V 0.2A SOT563

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA / 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V / 150 @ 10mA, 1V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: SOT-563, SOT-666

庫存81,108

200mA

40V

100mV @ 5mA, 50mA / 200mV @ 5mA, 50mA

-

30 @ 100mA, 1V / 150 @ 10mA, 1V

150mW

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMA204020R

Panasonic Electronic Components

TRANS 2PNP 50V 0.5A MINI6

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
Power - Max: 300mW
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: Mini6-G4-B

封裝: SOT-23-6

庫存78,162

500mA

50V

600mV @ 30mA, 300mA

100nA (ICBO)

120 @ 150mA, 10V

300mW

130MHz

150°C (TJ)

Surface Mount

SOT-23-6

Mini6-G4-B

FC18G-TL

onsemi

NCH J-FET+BIP NPN

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

UPA1436AH-AZ

Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR NPN

Transistor Type: 4 NPN Darlington (Quad)
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 2V
Power - Max: 3.5W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 10-SIP
Supplier Device Package: 10-SIP

封裝: -

Request a Quote

3A

100V

1.5V @ 1.5mA, 1.5A

1µA (ICBO)

2000 @ 1.5A, 2V

3.5W

-

150°C (TJ)

Through Hole

10-SIP

STA335A

Sanken Electric USA Inc.

TRANS 2NPN 36V 0.10A 8SIP

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 36V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 500mA, 4V
Power - Max: 2.5W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-SIP
Supplier Device Package: 8-SIP

封裝: -

Request a Quote

2A

36V

500mV @ 5mA, 1A

10µA (ICBO)

500 @ 500mA, 4V

2.5W

-

150°C (TJ)

Through Hole

8-SIP

SBC847CDW1T1

onsemi

TRANS 2NPN 45V 0.1A SOT-363

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 380mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封裝: -

Request a Quote

100mA

45V

600mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

380mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

UPA1454H-AZ

Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR NPN

Transistor Type: 4 NPN (Quad)
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 30mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 1A, 5V
Power - Max: 3.5W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 10-SIP
Supplier Device Package: 10-SIP

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5A

100V

1.2V @ 30mA, 3A

10µA (ICBO)

800 @ 1A, 5V

3.5W

-

-55°C ~ 150°C (TJ)

Through Hole

10-SIP

MMDT3906Q-7

Diodes Incorporated

General Purpose Transistor SOT36

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 200mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

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200mA

40V

400mV @ 5mA, 50mA

50nA

100 @ 10mA, 1V

200mW

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

JANKCAL2N3810

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

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50mA

60V

250mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

2N5793AU

Microchip Technology

DUAL SMALL-SIGNAL BJT

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 600mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: U

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600mA

40V

900mV @ 30mA, 300mA

10µA (ICBO)

40 @ 150mA, 10V

600mW

-

-65°C ~ 200°C (TJ)

Surface Mount

6-SMD, No Lead

U

JANTX2N2920A

Microchip Technology

DUAL SMALL-SIGNAL BJT

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

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30mA

60V

300mV @ 100µA, 1mA

10µA (ICBO)

300 @ 1mA, 5V

350mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

BC846SH-QX

Nexperia USA Inc.

TRANS 2NPN 65V 0.1A 6TSSOP

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 270mW
Frequency - Transition: 100MHz
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

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100mA

65V

300mV @ 5mA, 100mA

15nA (ICBO)

110 @ 2mA, 5V

270mW

100MHz

175°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

BC817DPN-DG-B3X

Nexperia USA Inc.

TRANSISTOR GEN PURP

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 600mW
Frequency - Transition: 100MHz, 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

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500mA

45V

700mV @ 50mA, 500mA

100nA (ICBO)

160 @ 100mA, 1V

600mW

100MHz, 80MHz

150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

CA3096CM96

Harris Corporation

3 NPN, 2 PNP TRANSISTOR ARRAY

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 50mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 24V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA / 400mV, 100µA, 1mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 30 @ 100µA, 5V
Power - Max: 200mW
Frequency - Transition: 335MHz, 6.8MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

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50mA, 10mA

24V

700mV @ 1mA, 10mA / 400mV, 100µA, 1mA

1µA

100 @ 1mA, 5V / 30 @ 100µA, 5V

200mW

335MHz, 6.8MHz

150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC