頁 41 - 電晶體 - 雙極 (BJT) - RF | 離散半導體產品 | 黑森爾電子
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電晶體 - 雙極 (BJT) - RF

記錄 1,249
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圖片
零件編號
製造商
描述
封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP 740FESD E6327
Infineon Technologies

TRANS RF NPN 47GHZ 4.7V TSFP4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 47GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
  • Gain: 9dB ~ 31dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
  • Current - Collector (Ic) (Max): 45mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
封裝: 4-SMD, Flat Leads
庫存7,376
4.7V
47GHz
0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
9dB ~ 31dB
160mW
160 @ 25mA, 3V
45mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
BFP460E6433HTMA1
Infineon Technologies

TRANS RF NPN 4.5V 50MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.8V
  • Frequency - Transition: 22GHz
  • Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
  • Gain: 12.5dB ~ 26.5dB
  • Power - Max: 230mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
封裝: SC-82A, SOT-343
庫存7,056
5.8V
22GHz
0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
12.5dB ~ 26.5dB
230mW
90 @ 20mA, 3V
70mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP 740F E6327
Infineon Technologies

TRANSISTOR RF NPN 30MA TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 42GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz
  • Gain: 27.5dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
封裝: 4-SMD, Flat Leads
庫存3,488
4.7V
42GHz
0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz
27.5dB
160mW
160 @ 25mA, 3V
30mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
hot NE202930-T1-A
CEL

RF TRANSISTOR NPN SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.15dB @ 1GHz
  • Gain: 13.5dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
封裝: SC-70, SOT-323
庫存2,000
6V
11GHz
1.15dB @ 1GHz
13.5dB
150mW
85 @ 5mA, 5V
100mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
MS2228
Microsemi Corporation

TRANS RF BIPO 175W 5.4A M214

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz ~ 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 175W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 5.4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M214
  • Supplier Device Package: M214
封裝: M214
庫存5,888
65V
1.03GHz ~ 1.09GHz
-
9dB
175W
10 @ 1A, 5V
5.4A
200°C (TJ)
Chassis Mount
M214
M214
SD1013
Microsemi Corporation

TRANS RF BIPO 13W 1A M135

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 150MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 13W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M135
  • Supplier Device Package: M135
封裝: M135
庫存5,328
35V
150MHz
-
10dB
13W
10 @ 200mA, 5V
1A
200°C (TJ)
Chassis Mount
M135
M135
NE85634-T1-RE-A
CEL

RF TRANSISTOR NPN SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 1.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封裝: TO-243AA
庫存5,968
12V
6.5GHz
1.1dB @ 1GHz
9dB
1.2W
125 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
NE461M02-T1-AZ
CEL

RF TRANSISTOR NPN SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
  • Gain: 8.3dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封裝: TO-243AA
庫存5,920
15V
-
1.5dB ~ 2dB @ 500MHz ~ 1GHz
8.3dB
2W
60 @ 50mA, 10V
250mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
NE46234-T1-SE-AZ
CEL

RF TRANSISTOR NPN SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 2.3dB @ 1GHz
  • Gain: 8.3dB
  • Power - Max: 1.8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封裝: TO-243AA
庫存3,504
12V
6GHz
2.3dB @ 1GHz
8.3dB
1.8W
125 @ 50mA, 5V
150mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
hot MRF544
Microsemi Corporation

TRANS NPN 70V 400MA TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 13.5dB
  • Power - Max: 3.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-39
  • Supplier Device Package: TO-39
封裝: TO-39
庫存4,384
70V
1.5GHz
-
13.5dB
3.5W
15 @ 50mA, 6V
400mA
-
Through Hole
TO-39
TO-39
PN918_D74Z
Fairchild/ON Semiconductor

TRANS RF NPN 15V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
庫存7,664
15V
600MHz
6dB @ 60MHz
15dB
350mW
20 @ 3mA, 1V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BLS3135-10,114
NXP

TRANSISTOR RF POWER SOT445C

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 3.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 34W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 1.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-445C
  • Supplier Device Package: CDFM2
封裝: SOT-445C
庫存5,648
75V
3.5GHz
-
9dB
34W
40 @ 250mA, 5V
1.5A
200°C (TJ)
Surface Mount
SOT-445C
CDFM2
UPA800T-A
CEL

RF DUAL TRANSISTORS NPN SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
  • Gain: 7.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封裝: 6-TSSOP, SC-88, SOT-363
庫存7,568
10V
8GHz
1.9dB @ 2GHz
7.5dB
200mW
80 @ 5mA, 3V
35mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
NESG2046M33-T3-A
CEL

TRANS NPN 2GHZ M33

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 18GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.5dB @ 2GHz
  • Gain: 9.5dB ~ 11.5dB
  • Power - Max: 130mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-SuperMiniMold (M33)
封裝: 3-SMD, Flat Leads
庫存2,384
5V
18GHz
0.8dB ~ 1.5dB @ 2GHz
9.5dB ~ 11.5dB
130mW
140 @ 2mA, 1V
40mA
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-SuperMiniMold (M33)
hot NE97833-T1B-A
CEL

RF TRANSISTOR PNP SOT-23

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 2dB @ 1GHz
  • Gain: 10dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封裝: TO-236-3, SC-59, SOT-23-3
庫存36,000
12V
5.5GHz
2dB @ 1GHz
10dB
200mW
20 @ 15mA, 10V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
KSC1393OBU
Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 700MHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
  • Gain: 20dB ~ 24dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封裝: TO-226-3, TO-92-3 (TO-226AA)
庫存4,496
30V
700MHz
2dB ~ 3dB @ 200MHz
20dB ~ 24dB
250mW
60 @ 2mA, 10V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot NE68019-T1-A
CEL

RF TRANSISTOR NPN SOT-523

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
  • Gain: 9.6dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
封裝: SOT-523
庫存105,624
10V
10GHz
1.9dB @ 2GHz
9.6dB
100mW
80 @ 5mA, 3V
35mA
150°C (TJ)
Surface Mount
SOT-523
SOT-523
FMMT918TA
Diodes Incorporated

TRANS RF NPN 15V 100MA SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存4,208
15V
600MHz
6dB @ 60MHz
15dB
330mW
20 @ 3mA, 1V
100mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2731-100M
Microsemi Corporation

TRANS RF BIPO 575W 15A 55KS1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 2.7GHz ~ 3.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8db ~ 9.4dB
  • Power - Max: 575W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
  • Current - Collector (Ic) (Max): 15A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KS-1
  • Supplier Device Package: 55KS-1
封裝: 55KS-1
庫存3,248
65V
2.7GHz ~ 3.1GHz
-
8db ~ 9.4dB
575W
15 @ 600mA, 5V
15A
200°C (TJ)
Chassis Mount
55KS-1
55KS-1
MS1582
Microsemi Corporation

TRANS RF BIPO 135W 8A M173

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 135W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M173
  • Supplier Device Package: M173
封裝: M173
庫存7,360
30V
470MHz ~ 860MHz
-
9dB
135W
10 @ 3A, 5V
8A
200°C (TJ)
Chassis Mount
M173
M173
MS1226
Microsemi Corporation

TRANS BIPO NPN M113

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 36V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 18dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 4.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
封裝: M113
庫存7,824
36V
30MHz
-
18dB
80W
10 @ 500mA, 5V
4.5A
200°C (TJ)
Chassis Mount
M113
M113
SRF4427
Microsemi Corporation

TRANS RF BIPO 1.5W 400MA 8SOIC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 17dB ~ 18dB
  • Power - Max: 1.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存2,672
18V
1.3GHz
-
17dB ~ 18dB
1.5W
20 @ 150mA, 5V
400mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AT-31011-TR2G
Broadcom Limited

TRANS NPN BIPO 5.5V 16MA SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz
  • Gain: 11dB ~ 13dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
  • Current - Collector (Ic) (Max): 16mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
封裝: TO-253-4, TO-253AA
庫存2,976
5.5V
-
0.9dB ~ 1.2dB @ 900MHz
11dB ~ 13dB
150mW
70 @ 1mA, 2.7V
16mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
2SC4626JCL
Panasonic Electronic Components

TRANS NPN 20VCEO 30MA SSMINI-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 250MHz
  • Noise Figure (dB Typ @ f): 2.8dB ~ 4dB @ 5MHz
  • Gain: -
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F1
封裝: SC-89, SOT-490
庫存2,576
20V
250MHz
2.8dB ~ 4dB @ 5MHz
-
125mW
110 @ 1mA, 10V
30mA
125°C (TJ)
Surface Mount
SC-89, SOT-490
SSMini3-F1
2SC5632G0L
Panasonic Electronic Components

TRANS NPN 8VCEO 50MA SMINI-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2
封裝: SC-85
庫存3,472
8V
1.1GHz
-
-
150mW
100 @ 2mA, 4V
50mA
150°C (TJ)
Surface Mount
SC-85
SMini3-F2
BFU725F/N1,115
NXP

TRANSISTOR NPN 40MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 55GHz
  • Noise Figure (dB Typ @ f): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
  • Gain: 10dB ~ 24dB
  • Power - Max: 136mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343 Reverse Pinning
  • Supplier Device Package: 4-SO
封裝: SOT-343 Reverse Pinning
庫存2,016
2.8V
55GHz
0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
10dB ~ 24dB
136mW
160 @ 10mA, 2V
40mA
150°C (TJ)
Surface Mount
SOT-343 Reverse Pinning
4-SO
hot 2N2857
Central Semiconductor Corp

TRANS NPN 15V 40MA TO-72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.9GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
封裝: TO-206AF, TO-72-4 Metal Can
庫存20,976
15V
1.9GHz
4.5dB @ 450MHz
-
200mW
30 @ 3mA, 1V
40mA
-65°C ~ 200°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
MRF422
M/A-Com Technology Solutions

TRANS RF NPN 35V 20A 211-11

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 13dB
  • Power - Max: 150W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 211-11, Style 2
  • Supplier Device Package: 211-11, Style 2
封裝: 211-11, Style 2
庫存6,252
35V
-
-
13dB
150W
15 @ 5A, 5V
20A
-
Chassis Mount
211-11, Style 2
211-11, Style 2
2SC5066-O,LF
Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SSM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 500MHz
  • Gain: -
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
封裝: SC-75, SOT-416
庫存22,500
12V
7GHz
1dB @ 500MHz
-
100mW
80 @ 10mA, 5V
30mA
125°C (TJ)
Surface Mount
SC-75, SOT-416
SSM
hot MMBT5179
Fairchild/ON Semiconductor

TRANSISTOR RF NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): 5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
封裝: TO-236-3, SC-59, SOT-23-3
庫存8,652
12V
2GHz
5dB @ 200MHz
15dB
225mW
25 @ 3mA, 1V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)