頁 155 - 電晶體 - IGBT - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - IGBT - 單

記錄 4,424
頁  155/158
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封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG4RC10STR
Infineon Technologies

IGBT 600V 14A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
  • Power - Max: 38W
  • Switching Energy: 140µJ (on), 2.58mJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 25ns/630ns
  • Test Condition: 480V, 8A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存7,840
600V
14A
18A
1.8V @ 15V, 8A
38W
140µJ (on), 2.58mJ (off)
Standard
15nC
25ns/630ns
480V, 8A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot IRG4PC50U
Infineon Technologies

IGBT 600V 55A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
  • Power - Max: 200W
  • Switching Energy: 120µJ (on), 540µJ (off)
  • Input Type: Standard
  • Gate Charge: 180nC
  • Td (on/off) @ 25°C: 32ns/170ns
  • Test Condition: 480V, 27A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存53,568
600V
55A
220A
2V @ 15V, 27A
200W
120µJ (on), 540µJ (off)
Standard
180nC
32ns/170ns
480V, 27A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
STGD3NB60SD-1
STMicroelectronics

IGBT 600V 6A 48W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 25A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 3A
  • Power - Max: 48W
  • Switching Energy: 1.1mJ (on), 1.15mJ (off)
  • Input Type: Standard
  • Gate Charge: 18nC
  • Td (on/off) @ 25°C: 125µs/3.4µs
  • Test Condition: 480V, 3A, 1 kOhm, 15V
  • Reverse Recovery Time (trr): 1.7µs
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存2,784
600V
6A
25A
1.5V @ 15V, 3A
48W
1.1mJ (on), 1.15mJ (off)
Standard
18nC
125µs/3.4µs
480V, 3A, 1 kOhm, 15V
1.7µs
175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot IXGP7N60B
IXYS

IGBT 600V 14A 54W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
  • Power - Max: 54W
  • Switching Energy: 70µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 9ns/100ns
  • Test Condition: 480V, 7A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存34,512
600V
14A
30A
2V @ 15V, 7A
54W
70µJ (on), 300µJ (off)
Standard
25nC
9ns/100ns
480V, 7A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot NGP15N41CLG
ON Semiconductor

IGBT 440V 15A 107W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 4V, 10A
  • Power - Max: 107W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/4µs
  • Test Condition: 300V, 6.5A, 1 kOhm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存3,904
440V
15A
50A
2.2V @ 4V, 10A
107W
-
Logic
-
-/4µs
300V, 6.5A, 1 kOhm
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRG4RC10UDTRRP
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 140µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 40ns/87ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,888
600V
8.5A
34A
2.6V @ 15V, 5A
38W
140µJ (on), 120µJ (off)
Standard
15nC
40ns/87ns
480V, 5A, 100 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IXGX120N60A3
IXYS

IGBT 600V 200A 780W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 200A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
  • Power - Max: 780W
  • Switching Energy: 2.7mJ (on), 6.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 450nC
  • Td (on/off) @ 25°C: 39ns/295ns
  • Test Condition: 480V, 100A, 1.5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封裝: TO-247-3
庫存5,520
600V
200A
600A
1.35V @ 15V, 100A
780W
2.7mJ (on), 6.6mJ (off)
Standard
450nC
39ns/295ns
480V, 100A, 1.5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXGP8N100
IXYS

IGBT 1000V 16A 54W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 32A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 8A
  • Power - Max: 54W
  • Switching Energy: 2.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 26.5nC
  • Td (on/off) @ 25°C: 15ns/600ns
  • Test Condition: 800V, 8A, 120 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存7,856
1000V
16A
32A
2.7V @ 15V, 8A
54W
2.3mJ (off)
Standard
26.5nC
15ns/600ns
800V, 8A, 120 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXGH36N60B3
IXYS

IGBT 600V 92A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 92A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 540µJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 19ns/125ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存3,312
600V
92A
200A
1.8V @ 15V, 30A
250W
540µJ (on), 800µJ (off)
Standard
80nC
19ns/125ns
400V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IKP40N65F5XKSA1
Infineon Technologies

IGBT 650V 74A 255W TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 74A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 255W
  • Switching Energy: 360µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 19ns/160ns
  • Test Condition: 400V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO-220-3
封裝: TO-220-3
庫存2,560
650V
74A
120A
2.1V @ 15V, 40A
255W
360µJ (on), 100µJ (off)
Standard
95nC
19ns/160ns
400V, 20A, 15 Ohm, 15V
60ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO-220-3
STGD5NB120SZ-1
STMicroelectronics

IGBT 1200V 10A 75W IPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 10A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
  • Power - Max: 75W
  • Switching Energy: 2.59mJ (on), 9mJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 690ns/12.1µs
  • Test Condition: 960V, 5A, 1 kOhm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: I-Pak
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存4,944
1200V
10A
10A
2V @ 15V, 5A
75W
2.59mJ (on), 9mJ (off)
Standard
-
690ns/12.1µs
960V, 5A, 1 kOhm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
I-Pak
STGW20V60F
STMicroelectronics

IGBT 600V 40A 167W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 167W
  • Switching Energy: 200µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 38ns/149ns
  • Test Condition: 400V, 20A, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存17,844
600V
40A
80A
2.2V @ 15V, 20A
167W
200µJ (on), 130µJ (off)
Standard
116nC
38ns/149ns
400V, 20A, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
APT200GN60B2G
Microsemi Corporation

IGBT 600V 283A 682W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 283A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 200A
  • Power - Max: 682W
  • Switching Energy: 13mJ (on), 11mJ (off)
  • Input Type: Standard
  • Gate Charge: 1180nC
  • Td (on/off) @ 25°C: 50ns/560ns
  • Test Condition: 400V, 200A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: -
封裝: TO-247-3
庫存7,600
600V
283A
600A
1.85V @ 15V, 200A
682W
13mJ (on), 11mJ (off)
Standard
1180nC
50ns/560ns
400V, 200A, 1 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
-
RJH60F7DPQ-A0#T0
Renesas Electronics America

IGBT 600V 90A 328.9W TO247A

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
  • Power - Max: 328.9W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 63ns/142ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247A
封裝: TO-247-3
庫存6,304
600V
90A
-
1.75V @ 15V, 50A
328.9W
-
Standard
-
63ns/142ns
400V, 30A, 5 Ohm, 15V
90ns
150°C (TJ)
Through Hole
TO-247-3
TO-247A
hot STGW40NC60KD
STMicroelectronics

IGBT 600V 70A 250W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 595µJ (on), 716µJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: 46ns/164ns
  • Test Condition: 480V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 45ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封裝: TO-247-3
庫存390,072
600V
70A
220A
2.7V @ 15V, 30A
250W
595µJ (on), 716µJ (off)
Standard
135nC
46ns/164ns
480V, 30A, 10 Ohm, 15V
45ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
hot APT65GP60B2G
Microsemi Corporation

IGBT 600V 100A 833W TMAX

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 250A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
  • Power - Max: 833W
  • Switching Energy: 605µJ (on), 896µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 30ns/91ns
  • Test Condition: 400V, 65A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
封裝: TO-247-3 Variant
庫存8,028
600V
100A
250A
2.7V @ 15V, 65A
833W
605µJ (on), 896µJ (off)
Standard
210nC
30ns/91ns
400V, 65A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
hot IRG4BC40WPBF
Infineon Technologies

IGBT 600V 40A 160W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 160W
  • Switching Energy: 110µJ (on), 230µJ (off)
  • Input Type: Standard
  • Gate Charge: 98nC
  • Td (on/off) @ 25°C: 27ns/100ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存35,700
600V
40A
160A
2.5V @ 15V, 20A
160W
110µJ (on), 230µJ (off)
Standard
98nC
27ns/100ns
480V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXGR48N60C3D1
IXYS

IGBT 600V 56A 125W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 56A
  • Current - Collector Pulsed (Icm): 230A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 125W
  • Switching Energy: 410µJ (on), 230µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 19ns/60ns
  • Test Condition: 400V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
封裝: ISOPLUS247?
庫存6,252
600V
56A
230A
2.7V @ 15V, 30A
125W
410µJ (on), 230µJ (off)
Standard
77nC
19ns/60ns
400V, 30A, 3 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
hot IRG4PC40FDPBF
Infineon Technologies

IGBT 600V 49A 160W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 49A
  • Current - Collector Pulsed (Icm): 196A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
  • Power - Max: 160W
  • Switching Energy: 950µJ (on), 2.01mJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 63ns/230ns
  • Test Condition: 480V, 27A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存115,464
600V
49A
196A
1.7V @ 15V, 27A
160W
950µJ (on), 2.01mJ (off)
Standard
100nC
63ns/230ns
480V, 27A, 10 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IXGT6N170AHV-TRL
IXYS

IGBT 1700V 7A TO268HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 14 A
  • Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
  • Power - Max: 75 W
  • Switching Energy: 590µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.5 nC
  • Td (on/off) @ 25°C: 46ns/220ns
  • Test Condition: 850V, 6A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 40 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268HV (IXGT)
封裝: -
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1700 V
6 A
14 A
7V @ 15V, 3A
75 W
590µJ (on), 180µJ (off)
Standard
18.5 nC
46ns/220ns
850V, 6A, 33Ohm, 15V
40 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268HV (IXGT)
RGT20NL65GTL
Rohm Semiconductor

IGBT TRENCH FLD 650V 20A TO263AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
  • Power - Max: 106 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 22 nC
  • Td (on/off) @ 25°C: 12ns/32ns
  • Test Condition: 400V, 10A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封裝: -
庫存3,000
650 V
20 A
30 A
2.1V @ 15V, 10A
106 W
-
Standard
22 nC
12ns/32ns
400V, 10A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
SIGC10T60EX1SA5
Infineon Technologies

IGBT TRENCH FS 600V 20A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
20 A
60 A
1.9V @ 15V, 20A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKFW75N65ES5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A HSIP247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 240 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
  • Power - Max: 148 W
  • Switching Energy: 1.48mJ (on), 660µJ (off)
  • Input Type: Standard
  • Gate Charge: 144 nC
  • Td (on/off) @ 25°C: 24ns/152ns
  • Test Condition: 400V, 60A, 8Ohm, 15V
  • Reverse Recovery Time (trr): 71 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-HSIP247-3-2
封裝: -
庫存3
650 V
80 A
240 A
1.7V @ 15V, 60A
148 W
1.48mJ (on), 660µJ (off)
Standard
144 nC
24ns/152ns
400V, 60A, 8Ohm, 15V
71 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-HSIP247-3-2
IXYT20N120C3D1HV
IXYS

IGBT 1200V 36A TO268HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 36 A
  • Current - Collector Pulsed (Icm): 88 A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
  • Power - Max: 230 W
  • Switching Energy: 1.3mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 53 nC
  • Td (on/off) @ 25°C: 20ns/90ns
  • Test Condition: 600V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 29 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268HV (IXYT)
封裝: -
Request a Quote
1200 V
36 A
88 A
3.4V @ 15V, 20A
230 W
1.3mJ (on), 1mJ (off)
Standard
53 nC
20ns/90ns
600V, 20A, 10Ohm, 15V
29 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268HV (IXYT)
SIGC07T60SNCX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 24ns/248ns
  • Test Condition: 400V, 6A, 50Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
6 A
18 A
2.5V @ 15V, 6A
-
-
Standard
-
24ns/248ns
400V, 6A, 50Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC76T60R3EX1SA1
Infineon Technologies

IGBT TRENCH FS 600V 150A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 450 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
150 A
450 A
1.9V @ 15V, 150A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
RGWSX2TS65GC13
Rohm Semiconductor

IGBT TRENCH FS 650V 104A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 104 A
  • Current - Collector Pulsed (Icm): 180 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
  • Power - Max: 288 W
  • Switching Energy: 1.43mJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 140 nC
  • Td (on/off) @ 25°C: 55ns/180ns
  • Test Condition: 400V, 60A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
封裝: -
庫存1,800
650 V
104 A
180 A
2V @ 15V, 60A
288 W
1.43mJ (on), 1.2mJ (off)
Standard
140 nC
55ns/180ns
400V, 60A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
AUXTMGPS4070D1
Infineon Technologies

IGBT TRENCH

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-