電晶體 - IGBT - 單

IRG7PH42UD1-EP

Infineon Technologies

IGBT 1200V 85A COPAK247

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 85A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
• Power - Max: 313W
• Switching Energy: 1.21mJ (off)
• Input Type: Standard
• Gate Charge: 180nC
• Td (on/off) @ 25°C: -/270ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

封裝: TO-247-3

IRGS4615DPBF

Infineon Technologies

IGBT 600V 23A 99W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 23A
• Current - Collector Pulsed (Icm): 24A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
• Power - Max: 99W
• Switching Energy: 70µJ (on), 145µJ (off)
• Input Type: Standard
• Gate Charge: 19nC
• Td (on/off) @ 25°C: 30ns/95ns
• Test Condition: 400V, 8A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 60ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRG4BC20KD-S

Infineon Technologies

IGBT 600V 16A 60W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 32A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
• Power - Max: 60W
• Switching Energy: 340µJ (on), 300µJ (off)
• Input Type: Standard
• Gate Charge: 34nC
• Td (on/off) @ 25°C: 54ns/180ns
• Test Condition: 480V, 9A, 50 Ohm, 15V
• Reverse Recovery Time (trr): 37ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXGH24N60C4

IXYS

IGBT 600V 56A 190W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 56A
• Current - Collector Pulsed (Icm): 130A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
• Power - Max: 190W
• Switching Energy: 400µJ (on), 300µJ (off)
• Input Type: Standard
• Gate Charge: 64nC
• Td (on/off) @ 25°C: 21ns/143ns
• Test Condition: 360V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封裝: TO-247-3

APT102GA60B2

Microsemi Corporation

IGBT 600V 183A 780W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 183A
• Current - Collector Pulsed (Icm): 307A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
• Power - Max: 780W
• Switching Energy: 1.354mJ (on), 1.614mJ (off)
• Input Type: Standard
• Gate Charge: 294nC
• Td (on/off) @ 25°C: 28ns/212ns
• Test Condition: 400V, 62A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: -

封裝: TO-247-3 Variant

IXGQ180N33TC

IXYS

IGBT 330V 180A TO3P

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 330V
• Current - Collector (Ic) (Max): 180A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

封裝: TO-3P-3, SC-65-3

IXGR60N60B2

IXYS

IGBT 600V 75A 250W ISOPLUS247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
• Power - Max: 250W
• Switching Energy: 1mJ (off)
• Input Type: Standard
• Gate Charge: 170nC
• Td (on/off) @ 25°C: 28ns/160ns
• Test Condition: 400V, 50A, 3.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: ISOPLUS247?

封裝: TO-247-3

NGB8204NT4

ON Semiconductor

IGBT 430V 18A 115W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 430V
• Current - Collector (Ic) (Max): 18A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
• Power - Max: 115W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STGF3NB60FD

STMicroelectronics

IGBT 600V 6A 25W TO220FP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 6A
• Current - Collector Pulsed (Icm): 24A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
• Power - Max: 25W
• Switching Energy: 125µJ (off)
• Input Type: Standard
• Gate Charge: 16nC
• Td (on/off) @ 25°C: 12.5ns/105ns
• Test Condition: 480V, 3A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 45ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FP

封裝: TO-220-3 Full Pack

IRGS15B60KDPBF

Infineon Technologies

IGBT 600V 31A 208W D2PAK

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 31A
• Current - Collector Pulsed (Icm): 62A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
• Power - Max: 208W
• Switching Energy: 220µJ (on), 340µJ (off)
• Input Type: Standard
• Gate Charge: 56nC
• Td (on/off) @ 25°C: 34ns/184ns
• Test Condition: 400V, 15A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 92ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IGP50N60TXKSA1

Infineon Technologies

IGBT 600V 100A 333W TO220-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 100A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
• Power - Max: 333W
• Switching Energy: 2.6mJ
• Input Type: Standard
• Gate Charge: 310nC
• Td (on/off) @ 25°C: 26ns/299ns
• Test Condition: 400V, 50A, 7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3

封裝: TO-220-3

IGW30N60H3FKSA1

Infineon Technologies

IGBT 600V 60A 187W TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
• Power - Max: 187W
• Switching Energy: 1.38mJ
• Input Type: Standard
• Gate Charge: 165nC
• Td (on/off) @ 25°C: 21ns/207ns
• Test Condition: 400V, 30A, 10.5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封裝: TO-247-3

IXGK35N120BD1

IXYS

IGBT 1200V 70A 350W TO264AA

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 140A
• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
• Power - Max: 350W
• Switching Energy: 3.8mJ (off)
• Input Type: Standard
• Gate Charge: 170nC
• Td (on/off) @ 25°C: 50ns/180ns
• Test Condition: 960V, 35A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 60ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264 (IXGK)

封裝: TO-264-3, TO-264AA

IXGA20N120B3

IXYS

IGBT 1200V 36A 180W TO263

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 36A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
• Power - Max: 180W
• Switching Energy: 920µJ (on), 560µJ (off)
• Input Type: Standard
• Gate Charge: 51nC
• Td (on/off) @ 25°C: 16ns/150ns
• Test Condition: 600V, 16A, 15 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (IXGA)

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AOTF10B60D

Alpha & Omega Semiconductor Inc.

IGBT 600V 20A 42W TO220F

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
• Power - Max: 42W
• Switching Energy: 260µJ (on), 70µJ (off)
• Input Type: Standard
• Gate Charge: 17.4nC
• Td (on/off) @ 25°C: 10ns/72ns
• Test Condition: 400V, 10A, 30 Ohm, 15V
• Reverse Recovery Time (trr): 105ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220-3F

封裝: TO-220-3 Full Pack

RJH1CV5DPK-00#T0

Renesas Electronics America

IGBT 1200V 50A 245W TO-3P

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
• Power - Max: 245W
• Switching Energy: 1.9mJ (on), 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 72nC
• Td (on/off) @ 25°C: 42ns/105ns
• Test Condition: 600V, 25A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 170ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

封裝: TO-3P-3, SC-65-3

IRG4PC30UDPBF

Infineon Technologies

IGBT 600V 23A 100W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 23A
• Current - Collector Pulsed (Icm): 92A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
• Power - Max: 100W
• Switching Energy: 380µJ (on), 160µJ (off)
• Input Type: Standard
• Gate Charge: 50nC
• Td (on/off) @ 25°C: 40ns/91ns
• Test Condition: 480V, 12A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 42ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封裝: TO-247-3

IRGS4056DPBF

Infineon Technologies

IGBT 600V 24A 140W D2PAK

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 24A
• Current - Collector Pulsed (Icm): 48A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
• Power - Max: 140W
• Switching Energy: 75µJ (on), 225µJ (off)
• Input Type: Standard
• Gate Charge: 25nC
• Td (on/off) @ 25°C: 31ns/83ns
• Test Condition: 400V, 12A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 68ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SIGC12T60NCX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 10 A
• Current - Collector Pulsed (Icm): 30 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 21ns/110ns
• Test Condition: 300V, 10A, 27Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: -

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SIGC14T60SNCX1SA4

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 15 A
• Current - Collector Pulsed (Icm): 45 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 31ns/261ns
• Test Condition: 400V, 15A, 21Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: -

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FGH30T65UPDT-F155

onsemi

IGBT 650V 60A 250W TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 60 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
• Power - Max: 250 W
• Switching Energy: 760µJ (on), 400µJ (off)
• Input Type: Standard
• Gate Charge: 155 nC
• Td (on/off) @ 25°C: 22ns/139ns
• Test Condition: 400V, 30A, 8Ohm, 15V
• Reverse Recovery Time (trr): 43 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封裝: -

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RGTH40TS65DGC13

Rohm Semiconductor

IGBT TRENCH FS 650V 40A TO247G

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 40 A
• Current - Collector Pulsed (Icm): 80 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
• Power - Max: 144 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 40 nC
• Td (on/off) @ 25°C: 22ns/73ns
• Test Condition: 400V, 20A, 10Ohm, 15V
• Reverse Recovery Time (trr): 58 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247G

封裝: -

SIGC39T60EX7SA1

Infineon Technologies

IGBT TRENCH FS 600V 75A DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 75 A
• Current - Collector Pulsed (Icm): 225 A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: -

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SIGC54T60R3EX7SA1

Infineon Technologies

IGBT TRENCH FS 600V 100A DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 100 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: -

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IXYH40N120B4

IXYS

IGBT DISCRETE TO-247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 136 A
• Current - Collector Pulsed (Icm): 250 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
• Power - Max: 680 W
• Switching Energy: 5.9mJ (on), 2.9mJ (off)
• Input Type: Standard
• Gate Charge: 94 nC
• Td (on/off) @ 25°C: 19ns/220ns
• Test Condition: 960V, 32A, 5Ohm, 15V
• Reverse Recovery Time (trr): 53 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXTH)

封裝: -

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MGF65A6L

Sanken Electric USA Inc.

FIELD STOP IGBT WITH FRD 650V/60

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 180 A
• Vce(on) (Max) @ Vge, Ic: 1.96V @ 15V, 60A
• Power - Max: 405 W
• Switching Energy: 1.7mJ (on), 1.4mJ (off)
• Input Type: Standard
• Gate Charge: 110 nC
• Td (on/off) @ 25°C: 50ns/130ns
• Test Condition: 400V, 60A, 10Ohm, 15V
• Reverse Recovery Time (trr): 65 ns
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P-3L

封裝: -

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SIGC76T60R3EX7SA1

Infineon Technologies

IGBT TRENCH FS 600V 150A DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 150 A
• Current - Collector Pulsed (Icm): 450 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: -

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IXXX200N60B3

IXYS

IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 380 A
• Current - Collector Pulsed (Icm): 900 A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
• Power - Max: 1630 W
• Switching Energy: 2.85mJ (on), 4.4mJ (off)
• Input Type: Standard
• Gate Charge: 315 nC
• Td (on/off) @ 25°C: 48ns/160ns
• Test Condition: 360V, 100A, 1Ohm, 15V
• Reverse Recovery Time (trr): 100 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: PLUS247™-3

封裝: -