頁 49 - 電晶體 - IGBT - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - IGBT - 單

記錄 4,424
頁  49/158
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製造商
描述
封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG8CH20K10F
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 20ns/170ns
  • Test Condition: 600V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: Die
庫存4,304
1200V
-
-
2V @ 15V, 15A
-
-
Standard
90nC
20ns/170ns
600V, 15A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IRGR4607DPBF
Infineon Technologies

IGBT 600V 11A 58W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
  • Power - Max: 58W
  • Switching Energy: 140µJ (on), 62µJ (off)
  • Input Type: Standard
  • Gate Charge: 9nC
  • Td (on/off) @ 25°C: 27ns/120ns
  • Test Condition: 400V, 4A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 48ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存7,664
600V
11A
12A
2.05V @ 15V, 4A
58W
140µJ (on), 62µJ (off)
Standard
9nC
27ns/120ns
400V, 4A, 100 Ohm, 15V
48ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IRG7PH30K10PBF
Infineon Technologies

IGBT 1200V 33A 210W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 33A
  • Current - Collector Pulsed (Icm): 27A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A
  • Power - Max: 210W
  • Switching Energy: 530µJ (on), 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 45nC
  • Td (on/off) @ 25°C: 14ns/110ns
  • Test Condition: 600V, 9A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存4,336
1200V
33A
27A
2.35V @ 15V, 9A
210W
530µJ (on), 380µJ (off)
Standard
45nC
14ns/110ns
600V, 9A, 22 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
NGTB30N60SWG
ON Semiconductor

IGBT 600V 60A 189W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
  • Power - Max: 189W
  • Switching Energy: 750µJ (on), 540µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 57ns/109ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存3,072
600V
60A
120A
2.2V @ 15V, 30A
189W
750µJ (on), 540µJ (off)
Standard
90nC
57ns/109ns
400V, 30A, 10 Ohm, 15V
200ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
RJH60D0DPM-00#T1
Renesas Electronics America

IGBT 600V 45A 40W TO3PFM

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
  • Power - Max: 40W
  • Switching Energy: 230µJ (on), 290µJ (off)
  • Input Type: Standard
  • Gate Charge: 46nC
  • Td (on/off) @ 25°C: 40ns/80ns
  • Test Condition: 300V, 22A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
封裝: TO-3PFM, SC-93-3
庫存6,528
600V
45A
-
2.2V @ 15V, 22A
40W
230µJ (on), 290µJ (off)
Standard
46nC
40ns/80ns
300V, 22A, 5 Ohm, 15V
100ns
150°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
IXGA7N60BD1
IXYS

IGBT 600V 14A 80W TO263

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 56A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
  • Power - Max: 80W
  • Switching Energy: 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 10ns/100ns
  • Test Condition: 480V, 7A, 18 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存3,088
600V
14A
56A
2V @ 15V, 7A
80W
300µJ (off)
Standard
25nC
10ns/100ns
480V, 7A, 18 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
IRG8CH137K10F
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 820nC
  • Td (on/off) @ 25°C: 115ns/570ns
  • Test Condition: 600V, 150A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: Die
庫存6,128
1200V
150A
-
2V @ 15V, 150A
-
-
Standard
820nC
115ns/570ns
600V, 150A, 2 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IRGC4056B
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: Die
庫存5,120
600V
8A
-
-
-
-
Standard
-
-
-
-
175°C (TJ)
Surface Mount
Die
Die
IXBH24N170
IXYS

IGBT 1700V 60A 250W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 230A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.06µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXBH)
封裝: TO-247-3
庫存7,904
1700V
60A
230A
2.5V @ 15V, 24A
250W
-
Standard
140nC
-
-
1.06µs
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXBH)
NGTB20N120IHWG
ON Semiconductor

IGBT 20A 1200V TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 20A
  • Power - Max: 341W
  • Switching Energy: 480µJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: -/170ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存6,816
1200V
40A
80A
2.65V @ 15V, 20A
341W
480µJ (off)
Standard
150nC
-/170ns
600V, 20A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IGW25T120
Infineon Technologies

IGBT 1200V 50A 190W TO247-3

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
  • Power - Max: 190W
  • Switching Energy: 4.2mJ
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 50ns/560ns
  • Test Condition: 600V, 25A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: TO-247-3
庫存5,440
1200V
50A
75A
2.2V @ 15V, 25A
190W
4.2mJ
Standard
155nC
50ns/560ns
600V, 25A, 22 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
STGWT30H60DFB
STMicroelectronics

IGBT 600V 60A 260W TO3PL

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 260W
  • Switching Energy: 383µJ (on), 293µJ (off)
  • Input Type: Standard
  • Gate Charge: 149nC
  • Td (on/off) @ 25°C: 37ns/146ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 53ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封裝: TO-3P-3, SC-65-3
庫存4,256
600V
60A
120A
2V @ 15V, 30A
260W
383µJ (on), 293µJ (off)
Standard
149nC
37ns/146ns
400V, 30A, 10 Ohm, 15V
53ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IXYJ20N120C3D1
IXYS

IGBT 1200V 21A 105W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 21A
  • Current - Collector Pulsed (Icm): 84A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
  • Power - Max: 105W
  • Switching Energy: 1.3mJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 20ns/90ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 195ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247?
封裝: TO-247-3
庫存2,176
1200V
21A
84A
3.4V @ 15V, 20A
105W
1.3mJ (on), 500µJ (off)
Standard
53nC
20ns/90ns
600V, 20A, 10 Ohm, 15V
195ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
ISO247?
STGFW20V60F
STMicroelectronics

IGBT 600V 40A 52W TO3PF

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 52W
  • Switching Energy: 200µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 38ns/149ns
  • Test Condition: 400V, 20A, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
封裝: TO-3P-3 Full Pack
庫存7,680
600V
40A
80A
2.2V @ 15V, 20A
52W
200µJ (on), 130µJ (off)
Standard
116nC
38ns/149ns
400V, 20A, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
hot HGTG30N60C3D
Fairchild/ON Semiconductor

IGBT 600V 63A 208W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 63A
  • Current - Collector Pulsed (Icm): 252A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
  • Power - Max: 208W
  • Switching Energy: 1.05mJ (on), 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 162nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存253,560
600V
63A
252A
1.8V @ 15V, 30A
208W
1.05mJ (on), 2.5mJ (off)
Standard
162nC
-
-
60ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot IGW30N60T
Infineon Technologies

IGBT 600V 60A 187W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
  • Power - Max: 187W
  • Switching Energy: 1.46mJ
  • Input Type: Standard
  • Gate Charge: 167nC
  • Td (on/off) @ 25°C: 23ns/254ns
  • Test Condition: 400V, 30A, 10.6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: TO-247-3
庫存110,556
600V
60A
90A
2.05V @ 15V, 30A
187W
1.46mJ
Standard
167nC
23ns/254ns
400V, 30A, 10.6 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
FGP10N60UNDF
Fairchild/ON Semiconductor

IGBT 600V 20A 139W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
  • Power - Max: 139W
  • Switching Energy: 150µJ (on), 50µJ (off)
  • Input Type: Standard
  • Gate Charge: 37nC
  • Td (on/off) @ 25°C: 8ns/52.2ns
  • Test Condition: 400V, 10A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 37.7ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封裝: TO-220-3
庫存9,036
600V
20A
30A
2.45V @ 15V, 10A
139W
150µJ (on), 50µJ (off)
Standard
37nC
8ns/52.2ns
400V, 10A, 10 Ohm, 15V
37.7ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot IRG4BC40FPBF
Infineon Technologies

IGBT 600V 49A 160W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 49A
  • Current - Collector Pulsed (Icm): 196A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
  • Power - Max: 160W
  • Switching Energy: 370µJ (on), 1.81mJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 26ns/240ns
  • Test Condition: 480V, 27A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存52,128
600V
49A
196A
1.7V @ 15V, 27A
160W
370µJ (on), 1.81mJ (off)
Standard
100nC
26ns/240ns
480V, 27A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
ISL9V5036P3_F085
Fairchild/ON Semiconductor

IGBT 390V 46A 250W TO220AA-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390V
  • Current - Collector (Ic) (Max): 46A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
  • Power - Max: 250W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: -/10.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封裝: TO-220-3
庫存8,760
390V
46A
-
1.6V @ 4V, 10A
250W
-
Logic
32nC
-/10.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
HGTG24N60D1D
Harris Corporation

UFS SERIES N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 96 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
  • Power - Max: 125 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 155 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 60 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: -
Request a Quote
600 V
40 A
96 A
2.3V @ 15V, 24A
125 W
-
Standard
155 nC
-
-
60 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
RGT50NS65DGC9
Rohm Semiconductor

IGBT TRENCH FIELD 650V 48A TO262

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 48 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 194 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 49 nC
  • Td (on/off) @ 25°C: 27ns/88ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: TO-262
封裝: -
庫存2,859
650 V
48 A
75 A
2.1V @ 15V, 25A
194 W
-
Standard
49 nC
27ns/88ns
400V, 25A, 10Ohm, 15V
58 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262
RJP30H2DPK-M2-T0
Renesas Electronics Corporation

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRGC30B60KB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
30 A
-
1.35V @ 15V, 6A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
IGT6D20
Harris Corporation

20A, 400V IGBT FOR MOTOR DRIVE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 32 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
封裝: -
Request a Quote
400 V
32 A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-204AA, TO-3
TO-3
AFGY120T65SPD
onsemi

IGBT - 650 V 120 A FS3 FOR EV TR

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 160 A
  • Current - Collector Pulsed (Icm): 360 A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
  • Power - Max: 714 W
  • Switching Energy: 6.6mJ (on), 3.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 125 nC
  • Td (on/off) @ 25°C: 40ns/80ns
  • Test Condition: 400V, 120A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 107 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: -
Request a Quote
650 V
160 A
360 A
2.05V @ 15V, 120A
714 W
6.6mJ (on), 3.8mJ (off)
Standard
125 nC
40ns/80ns
400V, 120A, 5Ohm, 15V
107 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IGB20N60H3ATMA1
Infineon Technologies

IGBT TRENCH FS 600V 40A TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 170 W
  • Switching Energy: 690µJ
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 16ns/194ns
  • Test Condition: 400V, 20A, 14.6Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
封裝: -
庫存2,868
600 V
40 A
80 A
2.4V @ 15V, 20A
170 W
690µJ
Standard
120 nC
16ns/194ns
400V, 20A, 14.6Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3
IRGC10B60KB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 2A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
10 A
-
1.3V @ 15V, 2A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
RGTH80TS65GC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 70A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 70 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 234 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 79 nC
  • Td (on/off) @ 25°C: 34ns/120ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封裝: -
庫存345
650 V
70 A
160 A
2.1V @ 15V, 40A
234 W
-
Standard
79 nC
34ns/120ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N