頁 94 - 電晶體 - IGBT - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - IGBT - 單

記錄 3,032
頁  94/102
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庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRG7PSH50UDPBF
Infineon Technologies

IGBT 1200V 116A 462W TO274

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 116A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 462W
  • Switching Energy: 3.6mJ (on), 2.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 440nC
  • Td (on/off) @ 25°C: 35ns/430ns
  • Test Condition: 600V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 190ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: SUPER-247 (TO-274AA)
封裝: TO-247-3
庫存5,792
1200V
116A
150A
2V @ 15V, 50A
462W
3.6mJ (on), 2.2mJ (off)
Standard
440nC
35ns/430ns
600V, 50A, 5 Ohm, 15V
190ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
SUPER-247 (TO-274AA)
IRGP6660D-EPBF
Infineon Technologies

IGBT 600V 60A TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 95A
  • Current - Collector Pulsed (Icm): 144A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 48A
  • Power - Max: 330W
  • Switching Energy: 600µJ (on), 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 60ns/155ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封裝: TO-247-3
庫存7,200
600V
95A
144A
1.95V @ 15V, 48A
330W
600µJ (on), 1.3mJ (off)
Standard
95nC
60ns/155ns
400V, 48A, 10 Ohm, 15V
70ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRGS4630DPBF
Infineon Technologies

IGBT 600V 47A 206W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 47A
  • Current - Collector Pulsed (Icm): 54A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
  • Power - Max: 206W
  • Switching Energy: 95µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 35nC
  • Td (on/off) @ 25°C: 40ns/105ns
  • Test Condition: 400V, 18A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存6,192
600V
47A
54A
1.95V @ 15V, 18A
206W
95µJ (on), 350µJ (off)
Standard
35nC
40ns/105ns
400V, 18A, 22 Ohm, 15V
100ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRGS4620DPBF
Infineon Technologies

IGBT 600V 32A 140W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 32A
  • Current - Collector Pulsed (Icm): 36A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
  • Power - Max: 140W
  • Switching Energy: 75µJ (on), 225µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 31ns/83ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,808
600V
32A
36A
1.85V @ 15V, 12A
140W
75µJ (on), 225µJ (off)
Standard
25nC
31ns/83ns
400V, 12A, 22 Ohm, 15V
68ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG7PH50K10D-EPBF
Infineon Technologies

IGBT 1200V 90A 400W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
  • Power - Max: 400W
  • Switching Energy: 2.3mJ (on), 1.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 300nC
  • Td (on/off) @ 25°C: 90ns/340ns
  • Test Condition: 600V, 35A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封裝: TO-247-3
庫存5,584
1200V
90A
160A
2.4V @ 15V, 35A
400W
2.3mJ (on), 1.6mJ (off)
Standard
300nC
90ns/340ns
600V, 35A, 5 Ohm, 15V
130ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
SGP20N60HSXKSA1
Infineon Technologies

IGBT 600V 36A 178W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 36A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
  • Power - Max: 178W
  • Switching Energy: 690µJ
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 18ns/207ns
  • Test Condition: 400V, 20A, 16 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3-1
封裝: TO-220-3
庫存6,464
600V
36A
80A
3.15V @ 15V, 20A
178W
690µJ
Standard
100nC
18ns/207ns
400V, 20A, 16 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3-1
SKB06N60HSATMA1
Infineon Technologies

IGBT 600V 12A 68W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 6A
  • Power - Max: 68W
  • Switching Energy: 190µJ
  • Input Type: Standard
  • Gate Charge: 33nC
  • Td (on/off) @ 25°C: 11ns/196ns
  • Test Condition: 400V, 6A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,184
600V
12A
24A
3.15V @ 15V, 6A
68W
190µJ
Standard
33nC
11ns/196ns
400V, 6A, 50 Ohm, 15V
100ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
hot IRGI4061DPBF
Infineon Technologies

IGBT 600V 20A 43W TO220FP

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 1.59V @ 15V, 11A
  • Power - Max: 43W
  • Switching Energy: 52µJ (on), 231µJ (off)
  • Input Type: Standard
  • Gate Charge: 35nC
  • Td (on/off) @ 25°C: 37ns/111ns
  • Test Condition: 400V, 11A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存112,284
600V
20A
40A
1.59V @ 15V, 11A
43W
52µJ (on), 231µJ (off)
Standard
35nC
37ns/111ns
400V, 11A, 22 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRG4PSH71U
Infineon Technologies

IGBT 1200V 99A 350W SUPER247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 99A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A
  • Power - Max: 350W
  • Switching Energy: 4.77mJ (on), 9.54mJ (off)
  • Input Type: Standard
  • Gate Charge: 370nC
  • Td (on/off) @ 25°C: 51ns/280ns
  • Test Condition: 960V, 70A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-274AA
  • Supplier Device Package: SUPER-247 (TO-274AA)
封裝: TO-274AA
庫存6,032
1200V
99A
200A
2.7V @ 15V, 70A
350W
4.77mJ (on), 9.54mJ (off)
Standard
370nC
51ns/280ns
960V, 70A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-274AA
SUPER-247 (TO-274AA)
IRG4BC30U-S
Infineon Technologies

IGBT 600V 23A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 160µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 17ns/78ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存3,776
600V
23A
92A
2.1V @ 15V, 12A
100W
160µJ (on), 200µJ (off)
Standard
50nC
17ns/78ns
480V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRGBC20UD2
Infineon Technologies

IGBT W/DIODE 600V 13A TO-220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存133,200
600V
13A
-
3V @ 15V, 6.5A
60W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot RJH60D1DPP-M0#T2
Renesas Electronics America

IGBT 600V 20A 20.8W TO220FL

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: 30W
  • Switching Energy: 100µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 13nC
  • Td (on/off) @ 25°C: 30ns/42ns
  • Test Condition: 300V, 10A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FL
封裝: TO-220-3 Full Pack
庫存43,080
600V
20A
-
2.5V @ 15V, 10A
30W
100µJ (on), 130µJ (off)
Standard
13nC
30ns/42ns
300V, 10A, 5 Ohm, 15V
70ns
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FL
IXGP15N120C
IXYS

IGBT 1200V 30A 200W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
  • Power - Max: 200W
  • Switching Energy: 1.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 86nC
  • Td (on/off) @ 25°C: 25ns/150ns
  • Test Condition: 960V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存2,816
1200V
30A
60A
3.8V @ 15V, 15A
200W
1.05mJ (off)
Standard
86nC
25ns/150ns
960V, 15A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXGA90N33TC
IXYS

IGBT 330V 90A 200W TO263AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 45A
  • Power - Max: 200W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 69nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存3,472
330V
90A
-
1.8V @ 15V, 45A
200W
-
Standard
69nC
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
HGT1S12N60A4S9A
Fairchild/ON Semiconductor

IGBT 600V 54A 167W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 54A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 167W
  • Switching Energy: 55µJ (on), 50µJ (off)
  • Input Type: Standard
  • Gate Charge: 78nC
  • Td (on/off) @ 25°C: 17ns/96ns
  • Test Condition: 390V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存2,432
600V
54A
96A
2.7V @ 15V, 12A
167W
55µJ (on), 50µJ (off)
Standard
78nC
17ns/96ns
390V, 12A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
hot SGW10N60RUFDTM
Fairchild/ON Semiconductor

IGBT 600V 16A 75W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
  • Power - Max: 75W
  • Switching Energy: 141µJ (on), 215µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 15ns/36ns
  • Test Condition: 300V, 10A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存12,180
600V
16A
30A
2.8V @ 15V, 10A
75W
141µJ (on), 215µJ (off)
Standard
30nC
15ns/36ns
300V, 10A, 20 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot ISL9V3040D3S
Fairchild/ON Semiconductor

IGBT 430V 21A 150W TO252AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 21A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 17nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存140,604
430V
21A
-
1.6V @ 4V, 6A
150W
-
Logic
17nC
-/4.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
ISL9V2040D3S
Fairchild/ON Semiconductor

IGBT 430V 10A 130W TO252AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 4V, 6A
  • Power - Max: 130W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: -/3.64µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存6,176
430V
10A
-
1.9V @ 4V, 6A
130W
-
Logic
12nC
-/3.64µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
hot ISL9V5036S3S
Fairchild/ON Semiconductor

IGBT 390V 46A 250W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390V
  • Current - Collector (Ic) (Max): 46A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
  • Power - Max: 250W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: -/10.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存36,168
390V
46A
-
1.6V @ 4V, 10A
250W
-
Logic
32nC
-/10.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
IXGX50N120C3H1
IXYS

IGBT 1200V 95A 460W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 95A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
  • Power - Max: 460W
  • Switching Energy: 2mJ (on), 630µJ (off)
  • Input Type: Standard
  • Gate Charge: 196nC
  • Td (on/off) @ 25°C: 31ns/123ns
  • Test Condition: 600V, 40A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 75ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封裝: TO-247-3
庫存2,100
1200V
95A
240A
4.2V @ 15V, 40A
460W
2mJ (on), 630µJ (off)
Standard
196nC
31ns/123ns
600V, 40A, 2 Ohm, 15V
75ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXA30RG1200DHGLB-TRR
IXYS

IGBT PHASELEG 1200V 43A SMPD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 43A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 147W
  • Switching Energy: 2.5mJ (on), 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 76nC
  • Td (on/off) @ 25°C: 70ns/250ns
  • Test Condition: 600V, 25A, 39 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-SMD Module
  • Supplier Device Package: ISOPLUS-SMPD?.B
封裝: 9-SMD Module
庫存5,296
1200V
43A
-
2.1V @ 15V, 25A
147W
2.5mJ (on), 3mJ (off)
Standard
76nC
70ns/250ns
600V, 25A, 39 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
9-SMD Module
ISOPLUS-SMPD?.B
IXGH64N60A3
IXYS

IGBT 600V 460W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 50A
  • Power - Max: 460W
  • Switching Energy: 1.42mJ (on), 3.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 167nC
  • Td (on/off) @ 25°C: 26ns/268ns
  • Test Condition: 480V, 50A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存2,624
600V
-
400A
1.35V @ 15V, 50A
460W
1.42mJ (on), 3.28mJ (off)
Standard
167nC
26ns/268ns
480V, 50A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot IXGH30N60C3D1
IXYS

IGBT 600V 60A 220W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 220W
  • Switching Energy: 270µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 38nC
  • Td (on/off) @ 25°C: 16ns/42ns
  • Test Condition: 300V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存419,796
600V
60A
150A
3V @ 15V, 20A
220W
270µJ (on), 90µJ (off)
Standard
38nC
16ns/42ns
300V, 20A, 5 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGP24N120C3
IXYS

IGBT 1200V 48A 250W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
  • Power - Max: 250W
  • Switching Energy: 1.16mJ (on), 470µJ (off)
  • Input Type: Standard
  • Gate Charge: 79nC
  • Td (on/off) @ 25°C: 16ns/93ns
  • Test Condition: 600V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存7,776
1200V
48A
96A
4.2V @ 15V, 20A
250W
1.16mJ (on), 470µJ (off)
Standard
79nC
16ns/93ns
600V, 20A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
NGTB60N60SWG
ON Semiconductor

IGBT 600V 120A 298W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
  • Power - Max: 298W
  • Switching Energy: 1.41mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 173nC
  • Td (on/off) @ 25°C: 87ns/180ns
  • Test Condition: 400V, 60A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 76ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存3,408
600V
120A
240A
2.5V @ 15V, 60A
298W
1.41mJ (on), 600µJ (off)
Standard
173nC
87ns/180ns
400V, 60A, 10 Ohm, 15V
76ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IXA20I1200PB
IXYS

IGBT 1200V 33A 130W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 38A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 165W
  • Switching Energy: 1.65mJ (on), 1.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 47nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 15A, 56 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存3,488
1200V
38A
-
2.1V @ 15V, 15A
165W
1.65mJ (on), 1.7mJ (off)
Standard
47nC
-
600V, 15A, 56 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
NGTD13T65F2SWK
ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: Die
庫存6,080
650V
-
120A
2.2V @ 15V, 30A
-
-
Standard
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
Die
Die
hot FGPF15N60UNDF
Fairchild/ON Semiconductor

IGBT 600V 30A 42W TO-220F

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
  • Power - Max: 42W
  • Switching Energy: 370µJ (on), 67µJ (off)
  • Input Type: Standard
  • Gate Charge: 43nC
  • Td (on/off) @ 25°C: 9.3ns/54.8ns
  • Test Condition: 400V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 82.4ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F-3
封裝: TO-220-3 Full Pack
庫存114,864
600V
30A
45A
2.7V @ 15V, 15A
42W
370µJ (on), 67µJ (off)
Standard
43nC
9.3ns/54.8ns
400V, 15A, 10 Ohm, 15V
82.4ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F-3
IRG4RC10UTRPBF
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 80µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 19ns/116ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,664
600V
8.5A
34A
2.6V @ 15V, 5A
38W
80µJ (on), 160µJ (off)
Standard
15nC
19ns/116ns
480V, 5A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IXXH80N65B4H1
IXYS

IGBT 650V 160A 625W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 430A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
  • Power - Max: 625W
  • Switching Energy: 3.77mJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 38ns/120ns
  • Test Condition: 400V, 80A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 150ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXXH)
封裝: TO-247-3
庫存19,872
650V
160A
430A
2V @ 15V, 80A
625W
3.77mJ (on), 1.2mJ (off)
Standard
120nC
38ns/120ns
400V, 80A, 3 Ohm, 15V
150ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXXH)