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Fairchild/ON Semiconductor 產品 - 電晶體 - IGBT - 單

記錄 343
頁  2/12
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零件編號
製造商
描述
封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
FGA25S125P_SN00337
Fairchild/ON Semiconductor

IGBT 1250V 50A 250W TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1250V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
  • Power - Max: 250W
  • Switching Energy: 1.09mJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 204nC
  • Td (on/off) @ 25°C: 24ns/502ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存6,224
1250V
50A
75A
2.35V @ 15V, 25A
250W
1.09mJ (on), 580µJ (off)
Standard
204nC
24ns/502ns
600V, 25A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
FGA6540WDF
Fairchild/ON Semiconductor

IGBT 650V 80A 238W TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 238W
  • Switching Energy: 1.37mJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 55.5nC
  • Td (on/off) @ 25°C: 16.8ns/54.4ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 101ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存10,812
650V
80A
120A
2.3V @ 15V, 40A
238W
1.37mJ (on), 250µJ (off)
Standard
55.5nC
16.8ns/54.4ns
400V, 40A, 6 Ohm, 15V
101ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
FGA4060ADF
Fairchild/ON Semiconductor

IGBT 600V 80A 238W TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 238W
  • Switching Energy: 1.37mJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 55.5nC
  • Td (on/off) @ 25°C: 16.8ns/54.4ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 26ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存10,176
600V
80A
120A
2.3V @ 15V, 40A
238W
1.37mJ (on), 250µJ (off)
Standard
55.5nC
16.8ns/54.4ns
400V, 40A, 6 Ohm, 15V
26ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
FGAF20N60SMD
Fairchild/ON Semiconductor

IGBT 600V 40A 62.5W TO-3PF

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
  • Power - Max: 75W
  • Switching Energy: 452µJ (on), 141µJ (off)
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 12ns/91ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 26.7ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
封裝: TO-3P-3 Full Pack
庫存8,304
600V
40A
60A
1.7V @ 15V, 20A
75W
452µJ (on), 141µJ (off)
Standard
64nC
12ns/91ns
400V, 20A, 10 Ohm, 15V
26.7ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
FGH40T65SH_F155
Fairchild/ON Semiconductor

IGBT 650V 80A 268W TO-247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 268W
  • Switching Energy: 1.01mJ (on), 297µJ (off)
  • Input Type: Standard
  • Gate Charge: 72.2nC
  • Td (on/off) @ 25°C: 19.2ns/65.6ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封裝: TO-247-3
庫存12,822
650V
80A
120A
2.1V @ 15V, 40A
268W
1.01mJ (on), 297µJ (off)
Standard
72.2nC
19.2ns/65.6ns
400V, 40A, 6 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
FGA30N65SMD
Fairchild/ON Semiconductor

IGBT 650V 60A 300W TO3P-3

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 300W
  • Switching Energy: 716µJ (on), 208µJ (off)
  • Input Type: Standard
  • Gate Charge: 87nC
  • Td (on/off) @ 25°C: 14ns/102ns
  • Test Condition: 400V, 30A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封裝: TO-3P-3, SC-65-3
庫存7,944
650V
60A
90A
2.5V @ 15V, 30A
300W
716µJ (on), 208µJ (off)
Standard
87nC
14ns/102ns
400V, 30A, 6 Ohm, 15V
35ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
FGH20N60SFDTU_F085
Fairchild/ON Semiconductor

IGBT 600V 20A 165W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
  • Power - Max: 165W
  • Switching Energy: 430µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 66nC
  • Td (on/off) @ 25°C: 13ns/90ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存9,480
600V
40A
60A
2.8V @ 15V, 20A
165W
430µJ (on), 130µJ (off)
Standard
66nC
13ns/90ns
400V, 20A, 10 Ohm, 15V
40ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
FGA30T65SHD
Fairchild/ON Semiconductor

IGBT 650V 60A 238W TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 238W
  • Switching Energy: 598µJ (on), 167µJ (off)
  • Input Type: Standard
  • Gate Charge: 54.7nC
  • Td (on/off) @ 25°C: 14.4ns/52.8ns
  • Test Condition: 400V, 30A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 31.8ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存9,888
650V
60A
90A
2.1V @ 15V, 30A
238W
598µJ (on), 167µJ (off)
Standard
54.7nC
14.4ns/52.8ns
400V, 30A, 6 Ohm, 15V
31.8ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
FGB20N60SFD
Fairchild/ON Semiconductor

IGBT 600V 40A 208W D2PAK

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
  • Power - Max: 208W
  • Switching Energy: 370µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 13ns/90ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,776
600V
40A
60A
2.8V @ 15V, 20A
208W
370µJ (on), 160µJ (off)
Standard
65nC
13ns/90ns
400V, 20A, 10 Ohm, 15V
34ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
HGT1S10N120BNST
Fairchild/ON Semiconductor

IGBT 1200V 35A 298W TO263AB

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Power - Max: 298W
  • Switching Energy: 320µJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 23ns/165ns
  • Test Condition: 960V, 10A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存6,096
1200V
35A
80A
2.7V @ 15V, 10A
298W
320µJ (on), 800µJ (off)
Standard
100nC
23ns/165ns
960V, 10A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
FGA40T65UQDF
Fairchild/ON Semiconductor

IGBT 650V 80A 231W TO3PN

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 40A
  • Power - Max: 231W
  • Switching Energy: 989µJ (on), 310µJ (off)
  • Input Type: Standard
  • Gate Charge: 306nC
  • Td (on/off) @ 25°C: 32ns/271ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 89ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存7,452
650V
80A
120A
1.67V @ 15V, 40A
231W
989µJ (on), 310µJ (off)
Standard
306nC
32ns/271ns
400V, 40A, 6 Ohm, 15V
89ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
FGB40N60SM
Fairchild/ON Semiconductor

IGBT 600V 80A 349W D2PAK

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 349W
  • Switching Energy: 870µJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 119nC
  • Td (on/off) @ 25°C: 12ns/92ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存2,512
600V
80A
120A
2.3V @ 15V, 40A
349W
870µJ (on), 260µJ (off)
Standard
119nC
12ns/92ns
400V, 40A, 6 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
FGA40S65SH
Fairchild/ON Semiconductor

650V FS GEN3 TRENCH IGBT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
  • Power - Max: 268W
  • Switching Energy: 194µJ (on), 388µJ (off)
  • Input Type: Standard
  • Gate Charge: 73nC
  • Td (on/off) @ 25°C: 19.2ns/68.8ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存8,724
650V
80A
120A
1.81V @ 15V, 40A
268W
194µJ (on), 388µJ (off)
Standard
73nC
19.2ns/68.8ns
400V, 40A, 6 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
hot FGH40N65UFDTU
Fairchild/ON Semiconductor

IGBT 650V 80A 290W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 290W
  • Switching Energy: 1.19mJ (on), 460µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 24ns/112ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 45ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存20,484
650V
80A
120A
2.4V @ 15V, 40A
290W
1.19mJ (on), 460µJ (off)
Standard
120nC
24ns/112ns
400V, 40A, 10 Ohm, 15V
45ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
FGA3060ADF
Fairchild/ON Semiconductor

IGBT 600V 60A 176W TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
  • Power - Max: 176W
  • Switching Energy: 960µJ (on), 165µJ (off)
  • Input Type: Standard
  • Gate Charge: 37.4nC
  • Td (on/off) @ 25°C: 12ns/42.4ns
  • Test Condition: 400V, 30A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 26ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存8,544
600V
60A
90A
2.3V @ 15V, 30A
176W
960µJ (on), 165µJ (off)
Standard
37.4nC
12ns/42.4ns
400V, 30A, 6 Ohm, 15V
26ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
FGA6530WDF
Fairchild/ON Semiconductor

IGBT 650V 60A 176W TO3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
  • Power - Max: 176W
  • Switching Energy: 960µJ (on), 162µJ (off)
  • Input Type: Standard
  • Gate Charge: 37.4nC
  • Td (on/off) @ 25°C: 12ns/42.4ns
  • Test Condition: 400V, 30A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 81ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存9,192
650V
60A
90A
2.2V @ 15V, 30A
176W
960µJ (on), 162µJ (off)
Standard
37.4nC
12ns/42.4ns
400V, 30A, 6 Ohm, 15V
81ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
FGB20N60SFD_F085
Fairchild/ON Semiconductor

IGBT 600V 40A 208W D2PAK

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 20A
  • Power - Max: 208W
  • Switching Energy: 310µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 63nC
  • Td (on/off) @ 25°C: 10ns/90ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 111ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK (TO-263)
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,312
600V
40A
60A
2.85V @ 15V, 20A
208W
310µJ (on), 130µJ (off)
Standard
63nC
10ns/90ns
400V, 20A, 10 Ohm, 15V
111ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK (TO-263)
FGA40N65SMD
Fairchild/ON Semiconductor

IGBT 650V 80A 349W TO3P

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 349W
  • Switching Energy: 820µJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 119nC
  • Td (on/off) @ 25°C: 12ns/92ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存7,776
650V
80A
120A
2.5V @ 15V, 40A
349W
820µJ (on), 260µJ (off)
Standard
119nC
12ns/92ns
400V, 40A, 6 Ohm, 15V
42ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
hot FGA50S110P
Fairchild/ON Semiconductor

IGBT 1100V 50A 300W TO3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1100V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
  • Power - Max: 300W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 195nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存103,944
1100V
50A
120A
2.6V @ 15V, 50A
300W
-
Standard
195nC
-
-
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
FGB20N60SF
Fairchild/ON Semiconductor

IGBT 600V 40A 208W D2PAK

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
  • Power - Max: 208W
  • Switching Energy: 370µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 13ns/90ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存7,344
600V
40A
60A
2.8V @ 15V, 20A
208W
370µJ (on), 160µJ (off)
Standard
65nC
13ns/90ns
400V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
FGA15N120ANTDTU_F109
Fairchild/ON Semiconductor

IGBT 1200V 30A 186W TO3P

  • IGBT Type: NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 186W
  • Switching Energy: 3mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 15ns/160ns
  • Test Condition: 600V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 330ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封裝: TO-3P-3, SC-65-3
庫存8,748
1200V
30A
45A
2.4V @ 15V, 15A
186W
3mJ (on), 600µJ (off)
Standard
120nC
15ns/160ns
600V, 15A, 10 Ohm, 15V
330ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot ISL9V3036S3ST
Fairchild/ON Semiconductor

IGBT 360V 21A 150W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 360V
  • Current - Collector (Ic) (Max): 21A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 17nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存16,800
360V
21A
-
1.6V @ 4V, 6A
150W
-
Logic
17nC
-/4.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
ISL9V2040S3ST
Fairchild/ON Semiconductor

IGBT 430V 10A 130W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 4V, 6A
  • Power - Max: 130W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: -/3.64µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存4,224
430V
10A
-
1.9V @ 4V, 6A
130W
-
Logic
12nC
-/3.64µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
FGD3245G2_F085
Fairchild/ON Semiconductor

ECOSPARK2-450V IGNITION IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 450V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 23nC
  • Td (on/off) @ 25°C: 900ns/5.4µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,872
450V
23A
-
1.25V @ 4V, 6A
150W
-
Logic
23nC
900ns/5.4µs
-
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
ISL9V2040D3ST
Fairchild/ON Semiconductor

IGBT 430V 10A 130W TO252AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 4V, 6A
  • Power - Max: 130W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: -/3.64µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,920
430V
10A
-
1.9V @ 4V, 6A
130W
-
Logic
12nC
-/3.64µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
FGD3N60LSDTM
Fairchild/ON Semiconductor

IGBT 600V 6A 40W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 25A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
  • Power - Max: 40W
  • Switching Energy: 250µJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 12.5nC
  • Td (on/off) @ 25°C: 40ns/600ns
  • Test Condition: 480V, 3A, 470 Ohm, 10V
  • Reverse Recovery Time (trr): 234ns
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存7,248
600V
6A
25A
1.5V @ 10V, 3A
40W
250µJ (on), 1mJ (off)
Standard
12.5nC
40ns/600ns
480V, 3A, 470 Ohm, 10V
234ns
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
FGD5T120SH
Fairchild/ON Semiconductor

IGBT 1200V 5A FS3 DPAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 12.5A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A
  • Power - Max: 69W
  • Switching Energy: 247µJ (on), 94µJ (off)
  • Input Type: Standard
  • Gate Charge: 6.7nC
  • Td (on/off) @ 25°C: 4.8ns/24.8ns
  • Test Condition: 600V, 5A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存7,552
1200V
10A
12.5A
3.6V @ 15V, 5A
69W
247µJ (on), 94µJ (off)
Standard
6.7nC
4.8ns/24.8ns
600V, 5A, 30 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
FGD3N60UNDF
Fairchild/ON Semiconductor

IGBT 600V 6A 60W DPAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 9A
  • Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 3A
  • Power - Max: 60W
  • Switching Energy: 52µJ (on), 30µJ (off)
  • Input Type: Standard
  • Gate Charge: 1.6nC
  • Td (on/off) @ 25°C: 5.5ns/22ns
  • Test Condition: 400V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 21ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252, (D-Pak)
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,536
600V
6A
9A
2.52V @ 15V, 3A
60W
52µJ (on), 30µJ (off)
Standard
1.6nC
5.5ns/22ns
400V, 3A, 10 Ohm, 15V
21ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252, (D-Pak)
hot FGL40N120ANTU
Fairchild/ON Semiconductor

IGBT 1200V 64A 500W TO264

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 64A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
  • Power - Max: 500W
  • Switching Energy: 2.3mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: 15ns/110ns
  • Test Condition: 600V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
封裝: TO-264-3, TO-264AA
庫存71,424
1200V
64A
160A
3.2V @ 15V, 40A
500W
2.3mJ (on), 1.1mJ (off)
Standard
220nC
15ns/110ns
600V, 40A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
hot HGTG12N60C3D
Fairchild/ON Semiconductor

IGBT 600V 24A 104W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 104W
  • Switching Energy: 380µJ (on), 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存130,440
600V
24A
96A
2.2V @ 15V, 15A
104W
380µJ (on), 900µJ (off)
Standard
48nC
-
-
42ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247