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Fairchild/ON Semiconductor 產品 - 電晶體 - IGBT - 單

記錄 343
頁  3/12
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零件編號
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描述
封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot SGP23N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 23A 100W TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 115µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 17ns/60ns
  • Test Condition: 300V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封裝: TO-220-3
庫存73,080
600V
23A
92A
2.6V @ 15V, 12A
100W
115µJ (on), 135µJ (off)
Standard
-
17ns/60ns
300V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
FGP10N60UNDF
Fairchild/ON Semiconductor

IGBT 600V 20A 139W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
  • Power - Max: 139W
  • Switching Energy: 150µJ (on), 50µJ (off)
  • Input Type: Standard
  • Gate Charge: 37nC
  • Td (on/off) @ 25°C: 8ns/52.2ns
  • Test Condition: 400V, 10A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 37.7ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封裝: TO-220-3
庫存9,036
600V
20A
30A
2.45V @ 15V, 10A
139W
150µJ (on), 50µJ (off)
Standard
37nC
8ns/52.2ns
400V, 10A, 10 Ohm, 15V
37.7ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FGA25N120ANTDTU_F109
Fairchild/ON Semiconductor

IGBT 1200V 50A 312W TO3P

  • IGBT Type: NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
  • Power - Max: 312W
  • Switching Energy: 4.1mJ (on), 960µJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 50ns/190ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 350ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封裝: TO-3P-3, SC-65-3
庫存6,480
1200V
50A
90A
2.65V @ 15V, 50A
312W
4.1mJ (on), 960µJ (off)
Standard
200nC
50ns/190ns
600V, 25A, 10 Ohm, 15V
350ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot SGS10N60RUFDTU
Fairchild/ON Semiconductor

IGBT 600V 16A 55W TO220F

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
  • Power - Max: 55W
  • Switching Energy: 141µJ (on), 215µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 15ns/36ns
  • Test Condition: 300V, 10A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
封裝: TO-220-3 Full Pack
庫存14,724
600V
16A
30A
2.8V @ 15V, 10A
55W
141µJ (on), 215µJ (off)
Standard
30nC
15ns/36ns
300V, 10A, 20 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
hot FGH60N60SMD
Fairchild/ON Semiconductor

IGBT 600V 120A 600W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
  • Power - Max: 600W
  • Switching Energy: 1.26mJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 189nC
  • Td (on/off) @ 25°C: 18ns/104ns
  • Test Condition: 400V, 60A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 39ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存348,480
600V
120A
180A
2.5V @ 15V, 60A
600W
1.26mJ (on), 450µJ (off)
Standard
189nC
18ns/104ns
400V, 60A, 3 Ohm, 15V
39ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGH40T120SMDL4
Fairchild/ON Semiconductor

IGBT 1200V 80A 555W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 555W
  • Switching Energy: 2.24mJ (on), 1.02mJ (off)
  • Input Type: Standard
  • Gate Charge: 370nC
  • Td (on/off) @ 25°C: 44ns/464ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 65ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4L
封裝: TO-247-4
庫存7,308
1200V
80A
160A
2.4V @ 15V, 40A
555W
2.24mJ (on), 1.02mJ (off)
Standard
370nC
44ns/464ns
600V, 40A, 10 Ohm, 15V
65ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4L
hot FGA50N100BNTD2
Fairchild/ON Semiconductor

IGBT 1000V 50A 156W TO3P

  • IGBT Type: NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
  • Power - Max: 156W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 257nC
  • Td (on/off) @ 25°C: 34ns/243ns
  • Test Condition: 600V, 60A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 75ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封裝: TO-3P-3, SC-65-3
庫存34,800
1000V
50A
200A
2.9V @ 15V, 60A
156W
-
Standard
257nC
34ns/243ns
600V, 60A, 10 Ohm, 15V
75ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
FGH75T65SHDTL4
Fairchild/ON Semiconductor

IGBT 650V 150A 455W TO-247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 455W
  • Switching Energy: 1.06mJ (on), 1.56mJ (off)
  • Input Type: Standard
  • Gate Charge: 126nC
  • Td (on/off) @ 25°C: 55ns/189ns
  • Test Condition: 400V, 75A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 76ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247
封裝: TO-247-4
庫存10,284
650V
150A
300A
2.1V @ 15V, 75A
455W
1.06mJ (on), 1.56mJ (off)
Standard
126nC
55ns/189ns
400V, 75A, 15 Ohm, 15V
76ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247
hot FGH40N120ANTU
Fairchild/ON Semiconductor

IGBT 1200V 64A 417W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 64A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
  • Power - Max: 417W
  • Switching Energy: 2.3mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: 15ns/110ns
  • Test Condition: 600V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存6,192
1200V
64A
160A
3.2V @ 15V, 40A
417W
2.3mJ (on), 1.1mJ (off)
Standard
220nC
15ns/110ns
600V, 40A, 5 Ohm, 15V
-
-
Through Hole
TO-247-3
TO-247
FGH75T65UPD_F085
Fairchild/ON Semiconductor

IGBT 650V 150A 375W TO-247AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
  • Power - Max: 375W
  • Switching Energy: 2.85mJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 578nC
  • Td (on/off) @ 25°C: 32ns/166ns
  • Test Condition: 400V, 75A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 85ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存8,136
650V
150A
225A
2.3V @ 15V, 75A
375W
2.85mJ (on), 1.2mJ (off)
Standard
578nC
32ns/166ns
400V, 75A, 3 Ohm, 15V
85ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGH60N60SMD_F085
Fairchild/ON Semiconductor

IGBT 600V 120A 600W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
  • Power - Max: 600W
  • Switching Energy: 1.59mJ (on), 390µJ (off)
  • Input Type: Standard
  • Gate Charge: 280nC
  • Td (on/off) @ 25°C: 22ns/116ns
  • Test Condition: 400V, 60A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存10,104
600V
120A
180A
2.5V @ 15V, 60A
600W
1.59mJ (on), 390µJ (off)
Standard
280nC
22ns/116ns
400V, 60A, 3 Ohm, 15V
42ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGH60N60SFDTU_F085
Fairchild/ON Semiconductor

IGBT 600V 60A 378W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
  • Power - Max: 378W
  • Switching Energy: 1.97mJ (on), 570µJ (off)
  • Input Type: Standard
  • Gate Charge: 188nC
  • Td (on/off) @ 25°C: 26ns/134ns
  • Test Condition: 400V, 60A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 55ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存7,116
600V
120A
180A
2.9V @ 15V, 60A
378W
1.97mJ (on), 570µJ (off)
Standard
188nC
26ns/134ns
400V, 60A, 5 Ohm, 15V
55ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
FGH40N60SMDF_F085
Fairchild/ON Semiconductor

IGBT 600V 80A 349W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 349W
  • Switching Energy: 1.3mJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 122nC
  • Td (on/off) @ 25°C: 18ns/110ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存8,556
600V
80A
120A
2.5V @ 15V, 40A
349W
1.3mJ (on), 260µJ (off)
Standard
122nC
18ns/110ns
400V, 40A, 6 Ohm, 15V
90ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGA6065ADF
Fairchild/ON Semiconductor

IGBT 650V 120A 306W TO3P

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 306W
  • Switching Energy: 2.46mJ (on), 520µJ (off)
  • Input Type: Standard
  • Gate Charge: 84nC
  • Td (on/off) @ 25°C: 25.6ns/71ns
  • Test Condition: 400V, 60A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 110ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存9,468
650V
120A
180A
2.3V @ 15V, 60A
306W
2.46mJ (on), 520µJ (off)
Standard
84nC
25.6ns/71ns
400V, 60A, 6 Ohm, 15V
110ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
FGA6560WDF
Fairchild/ON Semiconductor

IGBT 650V 120A 306W TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 306W
  • Switching Energy: 2.46mJ (on), 520µJ (off)
  • Input Type: Standard
  • Gate Charge: 84nC
  • Td (on/off) @ 25°C: 25.6ns/71ns
  • Test Condition: 400V, 60A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 110ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存8,604
650V
120A
180A
2.3V @ 15V, 60A
306W
2.46mJ (on), 520µJ (off)
Standard
84nC
25.6ns/71ns
400V, 60A, 6 Ohm, 15V
110ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
FGH40N60SMD_F085
Fairchild/ON Semiconductor

IGBT 600V 80A 349W TO-247-3

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 349W
  • Switching Energy: 920µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 180nC
  • Td (on/off) @ 25°C: 18ns/110ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 47ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存9,564
600V
80A
120A
2.5V @ 15V, 40A
349W
920µJ (on), 300µJ (off)
Standard
180nC
18ns/110ns
400V, 40A, 6 Ohm, 15V
47ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGH40T100SMD_F155
Fairchild/ON Semiconductor

IGBT 1000V 80A 333W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 333W
  • Switching Energy: 2.35mJ (on), 1.15mJ (off)
  • Input Type: Standard
  • Gate Charge: 398nC
  • Td (on/off) @ 25°C: 29ns/285ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 78ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存7,476
1000V
80A
120A
2.3V @ 15V, 40A
333W
2.35mJ (on), 1.15mJ (off)
Standard
398nC
29ns/285ns
600V, 40A, 10 Ohm, 15V
78ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGH40N60SFDTU_F085
Fairchild/ON Semiconductor

IGBT 600V 40A 290W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
  • Power - Max: 290W
  • Switching Energy: 1.23mJ (on), 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 121nC
  • Td (on/off) @ 25°C: 21ns/138ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存6,240
600V
80A
120A
2.9V @ 15V, 40A
290W
1.23mJ (on), 380µJ (off)
Standard
121nC
21ns/138ns
400V, 40A, 10 Ohm, 15V
68ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
FGH50T65UPD
Fairchild/ON Semiconductor

IGBT 650V 100A 340W TO-247AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
  • Power - Max: 340W
  • Switching Energy: 2.7mJ (on), 740µJ (off)
  • Input Type: Standard
  • Gate Charge: 230nC
  • Td (on/off) @ 25°C: 32ns/160ns
  • Test Condition: 400V, 50A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 53ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存8,052
650V
100A
150A
2.3V @ 15V, 50A
340W
2.7mJ (on), 740µJ (off)
Standard
230nC
32ns/160ns
400V, 50A, 6 Ohm, 15V
53ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
FGH40N65UFDTU_F085
Fairchild/ON Semiconductor

IGBT 650V 40A 290W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 290W
  • Switching Energy: 1.28mJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 119nC
  • Td (on/off) @ 25°C: 23ns/126ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 65ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存8,832
650V
80A
120A
2.4V @ 15V, 40A
290W
1.28mJ (on), 500µJ (off)
Standard
119nC
23ns/126ns
400V, 40A, 10 Ohm, 15V
65ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
FGA50T65SHD
Fairchild/ON Semiconductor

IGBT 650V 100A 319W TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 319W
  • Switching Energy: 1.28mJ (on), 384µJ (off)
  • Input Type: Standard
  • Gate Charge: 87nC
  • Td (on/off) @ 25°C: 22.4ns/73.6ns
  • Test Condition: 400V, 50A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 34.6ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存9,456
650V
100A
150A
2.1V @ 15V, 50A
319W
1.28mJ (on), 384µJ (off)
Standard
87nC
22.4ns/73.6ns
400V, 50A, 6 Ohm, 15V
34.6ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
FGA5065ADF
Fairchild/ON Semiconductor

IGBT 650V 100A TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
  • Power - Max: 268W
  • Switching Energy: 1.35mJ (on), 309µJ (off)
  • Input Type: Standard
  • Gate Charge: 72.2nC
  • Td (on/off) @ 25°C: 20.8ns/62.4ns
  • Test Condition: 400V, 50A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 31.8ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存9,168
650V
100A
150A
2.2V @ 15V, 50A
268W
1.35mJ (on), 309µJ (off)
Standard
72.2nC
20.8ns/62.4ns
400V, 50A, 6 Ohm, 15V
31.8ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
FGH40T65SPD_F085
Fairchild/ON Semiconductor

AUTOMOTIVE 650V FS GEN3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 267W
  • Switching Energy: 1.16MJ (on), 270µJ (off)
  • Input Type: Standard
  • Gate Charge: 36nC
  • Td (on/off) @ 25°C: 18ns/35ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存6,252
650V
80A
120A
2.4V @ 15V, 40A
267W
1.16MJ (on), 270µJ (off)
Standard
36nC
18ns/35ns
400V, 40A, 6 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
hot FGL60N100BNTDTU
Fairchild/ON Semiconductor

IGBT 1000V 60A 180W TO264

  • IGBT Type: NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
  • Power - Max: 180W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 275nC
  • Td (on/off) @ 25°C: 140ns/630ns
  • Test Condition: 600V, 60A, 51 Ohm, 15V
  • Reverse Recovery Time (trr): 1.2µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
封裝: TO-264-3, TO-264AA
庫存190,404
1000V
60A
120A
2.9V @ 15V, 60A
180W
-
Standard
275nC
140ns/630ns
600V, 60A, 51 Ohm, 15V
1.2µs
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
FGH40T65SHDF_F155
Fairchild/ON Semiconductor

IGBT 650V 80A 268W TO-247-3

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
  • Power - Max: 268W
  • Switching Energy: 1.22mJ (on), 440µJ (off)
  • Input Type: Standard
  • Gate Charge: 68nC
  • Td (on/off) @ 25°C: 18ns/64ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 101ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存6,784
650V
80A
120A
1.81V @ 15V, 40A
268W
1.22mJ (on), 440µJ (off)
Standard
68nC
18ns/64ns
400V, 40A, 6 Ohm, 15V
101ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGH40T65SHD_F155
Fairchild/ON Semiconductor

IGBT 650V 80A 268W TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 268W
  • Switching Energy: 1.01mJ (on), 297µJ (off)
  • Input Type: Standard
  • Gate Charge: 72.2nC
  • Td (on/off) @ 25°C: 19.2ns/65.6ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 31.8ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封裝: TO-247-3
庫存13,620
650V
80A
120A
2.1V @ 15V, 40A
268W
1.01mJ (on), 297µJ (off)
Standard
72.2nC
19.2ns/65.6ns
400V, 40A, 6 Ohm, 15V
31.8ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
hot FGH40N60SFTU
Fairchild/ON Semiconductor

IGBT 600V 80A 290W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
  • Power - Max: 290W
  • Switching Energy: 1.13mJ (on), 310µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 25ns/115ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存3,984
600V
80A
120A
2.9V @ 15V, 40A
290W
1.13mJ (on), 310µJ (off)
Standard
120nC
25ns/115ns
400V, 40A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
FGA40T65SHD
Fairchild/ON Semiconductor

IGBT 650V 80A 268W TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 268W
  • Switching Energy: 1.01mJ (on), 297µJ (off)
  • Input Type: Standard
  • Gate Charge: 72.2nC
  • Td (on/off) @ 25°C: 19.2ns/65.6ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 31.8ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存10,584
650V
80A
120A
2.1V @ 15V, 40A
268W
1.01mJ (on), 297µJ (off)
Standard
72.2nC
19.2ns/65.6ns
400V, 40A, 6 Ohm, 15V
31.8ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
FGA40T65SHDF
Fairchild/ON Semiconductor

IGBT 650V 80A 268W TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
  • Power - Max: 268W
  • Switching Energy: 1.22mJ (on), 440µJ (off)
  • Input Type: Standard
  • Gate Charge: 68nC
  • Td (on/off) @ 25°C: 18ns/64ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 101ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存10,176
650V
80A
120A
1.81V @ 15V, 40A
268W
1.22mJ (on), 440µJ (off)
Standard
68nC
18ns/64ns
400V, 40A, 6 Ohm, 15V
101ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
FGH80N60FDTU
Fairchild/ON Semiconductor

IGBT 600V 80A 290W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 290W
  • Switching Energy: 1mJ (on), 520µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 21ns/126ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 36ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存6,108
600V
80A
160A
2.4V @ 15V, 40A
290W
1mJ (on), 520µJ (off)
Standard
120nC
21ns/126ns
400V, 40A, 10 Ohm, 15V
36ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247