頁 4 - Infineon Technologies 產品 - 電晶體 - 雙極 (BJT) - 單、預偏壓 | 黑森爾電子
聯繫我們
SalesDept@heisener.com 86-755-83210559-827
Language Translation

* Please refer to the English Version as our Official Version.

Infineon Technologies 產品 - 電晶體 - 雙極 (BJT) - 單、預偏壓

記錄 206
頁  4/7
圖片
零件編號
製造商
描述
封裝
庫存
數量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
BCR 146L3 E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSLP-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 70mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
封裝: SC-101, SOT-883
庫存2,512
70mA
50V
47k
22k
50 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SC-101, SOT-883
PG-TSLP-3
BCR 146F E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSFP-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 70mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
封裝: SOT-723
庫存6,032
70mA
50V
47k
22k
50 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SOT-723
PG-TSFP-3
BCR142WE6327HTSA1
Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封裝: SC-70, SOT-323
庫存3,952
100mA
50V
22k
47k
70 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SC-70, SOT-323
PG-SOT323-3
BCR 142T E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW SC75

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
封裝: SC-75, SOT-416
庫存6,656
100mA
50V
22k
47k
70 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SC-75, SOT-416
PG-SC-75
BCR 142L3 E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSLP-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
封裝: SC-101, SOT-883
庫存3,344
100mA
50V
22k
47k
70 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SC-101, SOT-883
PG-TSLP-3
BCR 142F E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSFP-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
封裝: SOT-723
庫存3,328
100mA
50V
22k
47k
70 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SOT-723
PG-TSFP-3
BCR142B6327HTLA1
Infineon Technologies

TRANS PREBIAS NPN 200MW SOT23-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存3,968
100mA
50V
22k
47k
70 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BCR141WE6327HTSA1
Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 130MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封裝: SC-70, SOT-323
庫存6,624
100mA
50V
22k
22k
50 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
130MHz
250mW
Surface Mount
SC-70, SOT-323
PG-SOT323-3
BCR 141T E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW SC75

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 130MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
封裝: SC-75, SOT-416
庫存6,800
100mA
50V
22k
22k
50 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
130MHz
250mW
Surface Mount
SC-75, SOT-416
PG-SC-75
BCR 141L3 E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSLP-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 130MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
封裝: SC-101, SOT-883
庫存7,616
100mA
50V
22k
22k
50 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
130MHz
250mW
Surface Mount
SC-101, SOT-883
PG-TSLP-3
BCR 141F E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSFP-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 130MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
封裝: SOT-723
庫存5,360
100mA
50V
22k
22k
50 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
130MHz
250mW
Surface Mount
SOT-723
PG-TSFP-3
BCR 139T E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW SC75

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
封裝: SC-75, SOT-416
庫存3,520
100mA
50V
22k
-
120 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SC-75, SOT-416
PG-SC-75
BCR 139L3 E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSLP-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
封裝: SC-101, SOT-883
庫存4,512
100mA
50V
22k
-
120 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SC-101, SOT-883
PG-TSLP-3
BCR 139F E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSFP-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
封裝: SOT-723
庫存6,272
100mA
50V
22k
-
120 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SOT-723
PG-TSFP-3
BCR135WE6327BTSA1
Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封裝: SC-70, SOT-323
庫存6,624
100mA
50V
10k
47k
70 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SC-70, SOT-323
PG-SOT323-3
BCR 135T E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW SC75

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
封裝: SC-75, SOT-416
庫存3,488
100mA
50V
10k
47k
70 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SC-75, SOT-416
PG-SC-75
BCR 135L3 E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSLP-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
封裝: SC-101, SOT-883
庫存3,680
100mA
50V
10k
47k
70 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SC-101, SOT-883
PG-TSLP-3
BCR 135F E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSFP-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
封裝: SOT-723
庫存5,408
100mA
50V
10k
47k
70 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SOT-723
PG-TSFP-3
BCR 135 B6327
Infineon Technologies

TRANS PREBIAS NPN 200MW SOT23-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存2,512
100mA
50V
10k
47k
70 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BCR133WE6327HTSA1
Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 130MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封裝: SC-70, SOT-323
庫存3,328
100mA
50V
10k
10k
30 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
130MHz
250mW
Surface Mount
SC-70, SOT-323
PG-SOT323-3
BCR 133T E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW SC75

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 130MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
封裝: SC-75, SOT-416
庫存6,800
100mA
50V
10k
10k
30 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
130MHz
250mW
Surface Mount
SC-75, SOT-416
PG-SC-75
BCR 133L3 E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSLP-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 130MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
封裝: SC-101, SOT-883
庫存5,504
100mA
50V
10k
10k
30 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
130MHz
250mW
Surface Mount
SC-101, SOT-883
PG-TSLP-3
BCR 133F E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSFP-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 130MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
封裝: SOT-723
庫存5,488
100mA
50V
10k
10k
30 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
130MHz
250mW
Surface Mount
SOT-723
PG-TSFP-3
BCR 133F B6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSFP-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 130MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
封裝: SOT-723
庫存3,488
100mA
50V
10k
10k
30 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
130MHz
250mW
Surface Mount
SOT-723
PG-TSFP-3
BCR 133 B6327
Infineon Technologies

TRANS PREBIAS NPN 200MW SOT23-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 130MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存4,352
100mA
50V
10k
10k
30 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
130MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BCR129WE6327HTSA1
Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封裝: SC-70, SOT-323
庫存7,872
100mA
50V
10k
-
120 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SC-70, SOT-323
PG-SOT323-3
BCR 129T E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW SC75

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
封裝: SC-75, SOT-416
庫存2,912
100mA
50V
10k
-
120 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SC-75, SOT-416
PG-SC-75
BCR 129L3 E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSLP-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
封裝: SC-101, SOT-883
庫存5,280
100mA
50V
10k
-
120 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SC-101, SOT-883
PG-TSLP-3
BCR 129F E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSFP-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
封裝: SOT-723
庫存4,944
100mA
50V
10k
-
120 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SOT-723
PG-TSFP-3
BCR119WE6327HTSA1
Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封裝: SC-70, SOT-323
庫存3,296
100mA
50V
4.7k
-
120 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SC-70, SOT-323
PG-SOT323-3