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Infineon Technologies |
IGBT 600V TO220 COPAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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封裝: - |
庫存3,904 |
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Infineon Technologies |
IGBT 600V 12A 100W TO252-3
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 12A
- Current - Collector Pulsed (Icm): 18A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
- Power - Max: 100W
- Switching Energy: 330µJ
- Input Type: Standard
- Gate Charge: 48nC
- Td (on/off) @ 25°C: 12ns/127ns
- Test Condition: 400V, 6A, 23 Ohm, 15V
- Reverse Recovery Time (trr): 68ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存6,560 |
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Infineon Technologies |
IGBT FAST 1200V 29A TO-247AC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 29A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 17A
- Power - Max: 160W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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封裝: TO-247-3 |
庫存6,688 |
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Infineon Technologies |
MOSFET N-CH 600V 11A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存2,000 |
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Infineon Technologies |
MOSFET N-CH 100V 1.7A SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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封裝: TO-261-4, TO-261AA |
庫存2,880 |
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Infineon Technologies |
MOSFET N-CH 200V 660MA SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 1V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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封裝: TO-261-4, TO-261AA |
庫存5,344 |
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Infineon Technologies |
MOSFET N CH 300V 19A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 210W (Tc)
- Rds On (Max) @ Id, Vgs: 185 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存5,232 |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 210µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存7,552 |
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Infineon Technologies |
MOSFET COOLMOS 700V TO251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 210µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 474pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 86W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 1A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Stub Leads, IPak
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封裝: TO-251-3 Stub Leads, IPak |
庫存3,712 |
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Infineon Technologies |
MOSFET N-CH 80V 9.3A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 5.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存26,832 |
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Infineon Technologies |
MOSFET N-CH 600V 21A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 790µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 192W (Tc)
- Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存402,000 |
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Infineon Technologies |
MOSFET P-CH 150V 13A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存5,328 |
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Infineon Technologies |
MOSFET N-CH 100V 127A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存23,244 |
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Infineon Technologies |
MOSFET N-CH 75V 195A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9370pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 140A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存6,456 |
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Infineon Technologies |
TRANS NPN 300V 0.5A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
- Power - Max: 360mW
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存3,664 |
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Infineon Technologies |
TRANS PNP 45V 0.5A SOT-323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 250mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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封裝: SC-70, SOT-323 |
庫存4,592 |
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Infineon Technologies |
TRANS NPN 125V 0.8A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 125V
- Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
- Power - Max: 330mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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封裝: TO-236-3, SC-59, SOT-23-3 |
庫存4,480 |
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Infineon Technologies |
TRANS PNP 32V 0.1A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 32V
- Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
- Power - Max: 330mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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封裝: TO-236-3, SC-59, SOT-23-3 |
庫存5,520 |
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Infineon Technologies |
TRANS PREBIAS PNP 250MW SOT323-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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封裝: SC-70, SOT-323 |
庫存7,136 |
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Infineon Technologies |
DIODE ARRAY SCHOTTKY 25V SOT323
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 25V
- Current - Average Rectified (Io) (per Diode): 100mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 35mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150nA @ 25V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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封裝: SC-70, SOT-323 |
庫存6,256 |
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Infineon Technologies |
IC REG LINEAR 5V 100MA SOT223-4
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 45V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 100mA
- Current - Output: 100mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 400µA ~ 15mA
- PSRR: 54dB (100Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Reverse Polarity
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
|
封裝: TO-261-4, TO-261AA |
庫存19,884 |
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Infineon Technologies |
IC REG BUCK ADJ 7A SYNC 15QFN
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 2.5V
- Voltage - Input (Max): 21V
- Voltage - Output (Min/Fixed): 0.6V
- Voltage - Output (Max): 12V
- Current - Output: 7A
- Frequency - Switching: 600kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 15-PowerVQFN
- Supplier Device Package: PQFN (5x6)
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封裝: 15-PowerVQFN |
庫存484,968 |
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Infineon Technologies |
IC DRIVER SPI 8CH LS 24SSOP
- Switch Type: Relay, Solenoid Driver
- Number of Outputs: 8
- Ratio - Input:Output: 1:2
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: SPI
- Voltage - Load: 41V (Max)
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Current - Output (Max): 210mA
- Rds On (Typ): 1.5 Ohm
- Input Type: -
- Features: -
- Fault Protection: Open Load Detect, Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 24-SSOP (0.154", 3.90mm Width)
- Supplier Device Package: -
|
封裝: 24-SSOP (0.154", 3.90mm Width) |
庫存20,286 |
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Infineon Technologies |
IC SW IPS 1CH HIGH SIDE DPAK-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 6 V ~ 60 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 3.8A
- Rds On (Typ): 24 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: D-Pak
|
封裝: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
庫存126,000 |
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Infineon Technologies |
IC MOTOR CONTROLLER 20DSO
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Controller - Commutation, Direction Management
- Output Configuration: Pre-Driver - Half Bridge (2)
- Interface: PWM
- Technology: Power MOSFET
- Step Resolution: -
- Applications: General Purpose
- Current - Output: -
- Voltage - Supply: 7.5 V ~ 60 V
- Voltage - Load: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: PG-DSO-20
|
封裝: 20-SOIC (0.295", 7.50mm Width) |
庫存3,088 |
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Infineon Technologies |
SVID EMULATOR USING CHIL GUI
- Applications: -
- Interface: -
- Voltage - Supply: -
- Package / Case: -
- Supplier Device Package: -
- Mounting Type: -
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封裝: - |
庫存4,576 |
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Infineon Technologies |
IC MCU 32BIT 32KB FLASH 16TSSOP
- Core Processor: ARM? Cortex?-M0
- Core Size: 32-Bit
- Speed: 32MHz
- Connectivity: I2C, LIN, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
- Number of I/O: 11
- Program Memory Size: 32KB (32K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: A/D 11x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
|
封裝: 16-TSSOP (0.173", 4.40mm Width) |
庫存2,080 |
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Infineon Technologies |
IC MCU 32BIT 4MB FLASH 176LQFP
- Core Processor: TriCore?
- Core Size: 32-Bit Dual-Core
- Speed: 200MHz
- Connectivity: ASC, CAN, Ethernet, FlexRay, HSSL, I2C, LIN, MSC, PSI5, QSPI, SENT
- Peripherals: DMA, WDT
- Number of I/O: 112
- Program Memory Size: 4MB (4M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 64K x 8
- RAM Size: 472K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 40x12b, 6 x Sigma-Delta
- Oscillator Type: External
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 176-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-176-22
|
封裝: 176-LQFP Exposed Pad |
庫存6,832 |
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Infineon Technologies |
IC RELAY PHOTOVO 20V 2.5A 6-SMD
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 100 mOhm
- Load Current: 2.5A
- Voltage - Input: 1.2VDC
- Voltage - Load: 0 ~ 20 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 6-SMD (0.300", 7.62mm)
- Supplier Device Package: 6-SMT
- Relay Type: Relay
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封裝: 6-SMD (0.300", 7.62mm) |
庫存64,368 |
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Infineon Technologies |
IC SPI POWER CNTRLR/HI SIDE SWIT
- Type: HID Lamp Controller
- Frequency: 5MHz
- Voltage - Supply: 6 V ~ 18 V
- Current - Supply: 80µA
- Current - Output Source/Sink: 4A, 7A
- Dimming: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 24-TSSOP-EP
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封裝: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad |
庫存2,256 |
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