頁 7 - Toshiba Semiconductor and Storage 產品 - 二極體 - 整流器 - 單

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CUS15S40,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1.5A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 40V Capacitance @ Vr, F: 170pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	封裝: SC-76, SOD-323	庫存3,200	40V	1.5A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	170pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
1SS352,H3F	Toshiba Semiconductor and Storage	DIODE GEN PURP 80V 100MA SC76-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76A Supplier Device Package: SC-76-2 Operating Temperature - Junction: 125°C (Max)	封裝: SC-76A	庫存5,760	80V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	3pF @ 0V, 1MHz	Surface Mount	SC-76A	SC-76-2	125°C (Max)
CRS03(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A SFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 30V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	封裝: SOD-123F	庫存6,528	30V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	40pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
TRS12E65C,S1Q	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 650V 12A TO220-2L Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 90µA @ 170V Capacitance @ Vr, F: 65pF @ 650V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C (Max)	封裝: TO-220-2	庫存5,328	650V	12A (DC)	1.7V @ 12A	No Recovery Time > 500mA (Io)	0ns	90µA @ 170V	65pF @ 650V, 1MHz	Through Hole	TO-220-2	TO-220-2L	175°C (Max)
CRS11(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A SFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 125°C	封裝: SOD-123F	庫存4,480	30V	1A	360mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 30V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 125°C
1SS250(TE85L,F)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 100MA SC59 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59 Operating Temperature - Junction: 125°C (Max)	封裝: TO-236-3, SC-59, SOT-23-3	庫存35,760	200V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	60ns	1µA @ 200V	3pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59	125°C (Max)
1SS370TE85LF	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 100MA SC70 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70 Operating Temperature - Junction: 125°C (Max)	封裝: SC-70, SOT-323	庫存4,000	200V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	60ns	1µA @ 200V	3pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SC-70	125°C (Max)
CUS551V30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 500MA USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	封裝: SC-76, SOD-323	庫存4,528	30V	500mA	470mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 20V	-	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
CUS10S40,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 400mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 40V Capacitance @ Vr, F: 120pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	封裝: SC-76, SOD-323	庫存6,736	40V	1A	400mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 40V	120pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
1SS403,H3F	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 100MA USC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	封裝: SC-76, SOD-323	庫存3,072	200V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	60ns	1µA @ 200V	3pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
1SS190TE85LF	Toshiba Semiconductor and Storage	DIODE GEN PURP 80V 100MA SC59-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3 Operating Temperature - Junction: 125°C (Max)	封裝: TO-236-3, SC-59, SOT-23-3	庫存30,000	80V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	4pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59-3	125°C (Max)
TRS10E65C,S1Q	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 650V 10A TO220-2L Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 90µA @ 650V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C (Max)	封裝: TO-220-2	庫存7,008	650V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	90µA @ 650V	-	Through Hole	TO-220-2	TO-220-2L	175°C (Max)
CMH08A(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 2A MFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	封裝: SOD-128	庫存2,512	400V	2A	1.8V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMH05A(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 1A MFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	封裝: SOD-128	庫存288,000	400V	1A	1.8V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CRS08(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1.5A SFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 360mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: 90pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 125°C	封裝: SOD-123F	庫存7,216	30V	1.5A	360mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	90pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 125°C
DSF01S30SC(TPL3)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 100MA SC2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 9.3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: SC2 Operating Temperature - Junction: 125°C (Max)	封裝: 2-SMD, No Lead	庫存6,016	30V	100mA	500mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	50µA @ 30V	9.3pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	SC2	125°C (Max)
1SS397TE85LF	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 100MA SC70 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70 Operating Temperature - Junction: 125°C (Max)	封裝: SC-70, SOT-323	庫存4,080	400V	100mA	1.3V @ 100mA	Small Signal =< 200mA (Io), Any Speed	500ns	1µA @ 400V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SC-70	125°C (Max)
CCS15S30,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 1.5A CST2C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 200pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: CST2C Operating Temperature - Junction: 125°C (Max)	封裝: 2-SMD, No Lead	庫存6,880	20V	1.5A	400mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	200pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	CST2C	125°C (Max)
CMF04(TE12L,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 800V 500MA MFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 2.5V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 50µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	封裝: SOD-128	庫存309,900	800V	500mA	2.5V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	100ns	50µA @ 800V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMF05(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 1KV 500MA MFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 2.7V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 50µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C	封裝: SOD-128	庫存3,152	1000V	500mA	2.7V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	100ns	50µA @ 800V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 125°C
1SS307(TE85L,F)	Toshiba Semiconductor and Storage	DIODE GEN PURP 30V 100MA SMINI Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 30V Capacitance @ Vr, F: 6pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini Operating Temperature - Junction: 125°C (Max)	封裝: TO-236-3, SC-59, SOT-23-3	庫存85,548	30V	100mA	1.3V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 30V	6pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini	125°C (Max)
CCS15S30,L3IDTF	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 1.5A CST2C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 200pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: CST2C Operating Temperature - Junction: 125°C (Max)	封裝: 2-SMD, No Lead	庫存4,384	20V	1.5A	400mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	200pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	CST2C	125°C (Max)
CES520,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 200MA ESC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 30V Capacitance @ Vr, F: 17pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max)	封裝: SC-79, SOD-523	庫存5,072	30V	200mA	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 30V	17pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	125°C (Max)
DSF01S30SL,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 100MA SL2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 9.02pF @ 2V, 1MHz Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: SL2 Operating Temperature - Junction: 125°C (Max)	封裝: 0201 (0603 Metric)	庫存6,432	30V	100mA	500mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	50µA @ 30V	9.02pF @ 2V, 1MHz	Surface Mount	0201 (0603 Metric)	SL2	125°C (Max)
CTS05S40,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 500MA CST2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 350mV @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 10V Capacitance @ Vr, F: 42pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2 Operating Temperature - Junction: 125°C (Max)	封裝: SOD-882	庫存5,328	40V	500mA	350mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	-	30µA @ 10V	42pF @ 0V, 1MHz	Surface Mount	SOD-882	CST2	125°C (Max)
CTS05S30,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 500MA CST2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 340mV @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 10V Capacitance @ Vr, F: 55pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2 Operating Temperature - Junction: 125°C (Max)	封裝: SOD-882	庫存5,504	30V	500mA	340mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 10V	55pF @ 0V, 1MHz	Surface Mount	SOD-882	CST2	125°C (Max)
1SS417CT,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 100MA FSC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 620mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 40V Capacitance @ Vr, F: 15pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: fSC Operating Temperature - Junction: 125°C (Max)	封裝: 2-SMD, Flat Lead	庫存3,536	40V	100mA	620mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 40V	15pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	fSC	125°C (Max)
1SS424(TPL3,F)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 200MA SSM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 20V Capacitance @ Vr, F: 20pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM Operating Temperature - Junction: 125°C (Max)	封裝: SC-75, SOT-416	庫存2,528	20V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	50µA @ 20V	20pF @ 0V, 1MHz	Surface Mount	SC-75, SOT-416	SSM	125°C (Max)
1SS389,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 10V 100MA ESC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 10V Capacitance @ Vr, F: 40pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max)	封裝: SC-79, SOD-523	庫存5,376	10V	100mA	500mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 10V	40pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	125°C (Max)
CUS520,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 200MA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 280mV @ 10mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 30V Capacitance @ Vr, F: 17pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	封裝: SC-76, SOD-323	庫存2,432	30V	200mA	280mV @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 30V	17pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)

CUS15S40,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1.5A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 40V
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

封裝: SC-76, SOD-323

庫存3,200

40V

1.5A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 40V

170pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

USC

125°C (Max)

1SS352,H3F

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SC76-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76A
Supplier Device Package: SC-76-2
Operating Temperature - Junction: 125°C (Max)

封裝: SC-76A

庫存5,760

80V

100mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

500nA @ 80V

3pF @ 0V, 1MHz

Surface Mount

SC-76A

SC-76-2

125°C (Max)

CRS03(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A SFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 30V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C

封裝: SOD-123F

庫存6,528

30V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 30V

40pF @ 10V, 1MHz

Surface Mount

SOD-123F

S-FLAT (1.6x3.5)

-40°C ~ 150°C

TRS12E65C,S1Q

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 650V 12A TO220-2L

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 90µA @ 170V
Capacitance @ Vr, F: 65pF @ 650V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)

封裝: TO-220-2

庫存5,328

650V

12A (DC)

1.7V @ 12A

No Recovery Time > 500mA (Io)

0ns

90µA @ 170V

65pF @ 650V, 1MHz

Through Hole

TO-220-2

TO-220-2L

175°C (Max)

CRS11(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A SFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C

封裝: SOD-123F

庫存4,480

30V

1A

360mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5mA @ 30V

-

Surface Mount

SOD-123F

S-FLAT (1.6x3.5)

-40°C ~ 125°C

1SS250(TE85L,F)

Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 100MA SC59

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)

封裝: TO-236-3, SC-59, SOT-23-3

庫存35,760

200V

100mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

60ns

1µA @ 200V

3pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59

125°C (Max)

1SS370TE85LF

Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 100MA SC70

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)

封裝: SC-70, SOT-323

庫存4,000

200V

100mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

60ns

1µA @ 200V

3pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

SC-70

125°C (Max)

CUS551V30,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 500MA USC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

封裝: SC-76, SOD-323

庫存4,528

30V

500mA

470mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 20V

-

Surface Mount

SC-76, SOD-323

USC

125°C (Max)

CUS10S40,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1A USC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 400mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 40V
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

封裝: SC-76, SOD-323

庫存6,736

40V

1A

400mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 40V

120pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

USC

125°C (Max)

1SS403,H3F

Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 100MA USC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

封裝: SC-76, SOD-323

庫存3,072

200V

100mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

60ns

1µA @ 200V

3pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

USC

125°C (Max)

1SS190TE85LF

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SC59-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59-3
Operating Temperature - Junction: 125°C (Max)

封裝: TO-236-3, SC-59, SOT-23-3

庫存30,000

80V

100mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

500nA @ 80V

4pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59-3

125°C (Max)

TRS10E65C,S1Q

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 650V 10A TO220-2L

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 90µA @ 650V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)

封裝: TO-220-2

庫存7,008

650V

10A (DC)

1.7V @ 10A

No Recovery Time > 500mA (Io)

0ns

90µA @ 650V

-

Through Hole

TO-220-2

TO-220-2L

175°C (Max)

CMH08A(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 2A MFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C

封裝: SOD-128

庫存2,512

400V

2A

1.8V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 400V

-

Surface Mount

SOD-128

M-FLAT (2.4x3.8)

-40°C ~ 150°C

CMH05A(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A MFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C

封裝: SOD-128

庫存288,000

400V

1A

1.8V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 400V

-

Surface Mount

SOD-128

M-FLAT (2.4x3.8)

-40°C ~ 150°C

CRS08(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A SFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 360mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C

封裝: SOD-123F

庫存7,216

30V

1.5A

360mV @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 30V

90pF @ 10V, 1MHz

Surface Mount

SOD-123F

S-FLAT (1.6x3.5)

-40°C ~ 125°C

DSF01S30SC(TPL3)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 100MA SC2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 9.3pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: SC2
Operating Temperature - Junction: 125°C (Max)

封裝: 2-SMD, No Lead

庫存6,016

30V

100mA

500mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

50µA @ 30V

9.3pF @ 0V, 1MHz

Surface Mount

2-SMD, No Lead

SC2

125°C (Max)

1SS397TE85LF

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 100MA SC70

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)

封裝: SC-70, SOT-323

庫存4,080

400V

100mA

1.3V @ 100mA

Small Signal =< 200mA (Io), Any Speed

500ns

1µA @ 400V

5pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

SC-70

125°C (Max)

CCS15S30,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 1.5A CST2C

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: CST2C
Operating Temperature - Junction: 125°C (Max)

封裝: 2-SMD, No Lead

庫存6,880

20V

1.5A

400mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

200pF @ 0V, 1MHz

Surface Mount

2-SMD, No Lead

CST2C

125°C (Max)

CMF04(TE12L,Q)

Toshiba Semiconductor and Storage

DIODE GEN PURP 800V 500MA MFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 50µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C

封裝: SOD-128

庫存309,900

800V

500mA

2.5V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

100ns

50µA @ 800V

-

Surface Mount

SOD-128

M-FLAT (2.4x3.8)

-40°C ~ 150°C

CMF05(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE GEN PURP 1KV 500MA MFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 50µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C

封裝: SOD-128

庫存3,152

1000V

500mA

2.7V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

100ns

50µA @ 800V

-

Surface Mount

SOD-128

M-FLAT (2.4x3.8)

-40°C ~ 125°C

1SS307(TE85L,F)

Toshiba Semiconductor and Storage

DIODE GEN PURP 30V 100MA SMINI

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 30V
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)

封裝: TO-236-3, SC-59, SOT-23-3

庫存85,548

30V

100mA

1.3V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

10µA @ 30V

6pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

125°C (Max)

CCS15S30,L3IDTF

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 1.5A CST2C

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: CST2C
Operating Temperature - Junction: 125°C (Max)

封裝: 2-SMD, No Lead

庫存4,384

20V

1.5A

400mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

200pF @ 0V, 1MHz

Surface Mount

2-SMD, No Lead

CST2C

125°C (Max)

CES520,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 200MA ESC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 30V
Capacitance @ Vr, F: 17pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)

封裝: SC-79, SOD-523

庫存5,072

30V

200mA

600mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

5µA @ 30V

17pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

ESC

125°C (Max)

DSF01S30SL,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 100MA SL2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 9.02pF @ 2V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Supplier Device Package: SL2
Operating Temperature - Junction: 125°C (Max)

封裝: 0201 (0603 Metric)

庫存6,432

30V

100mA

500mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

50µA @ 30V

9.02pF @ 2V, 1MHz

Surface Mount

0201 (0603 Metric)

SL2

125°C (Max)

CTS05S40,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 500MA CST2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 350mV @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30µA @ 10V
Capacitance @ Vr, F: 42pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)

封裝: SOD-882

庫存5,328

40V

500mA

350mV @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

-

30µA @ 10V

42pF @ 0V, 1MHz

Surface Mount

SOD-882

CST2

125°C (Max)

CTS05S30,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 500MA CST2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 340mV @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 10V
Capacitance @ Vr, F: 55pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)

封裝: SOD-882

庫存5,504

30V

500mA

340mV @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 10V

55pF @ 0V, 1MHz

Surface Mount

SOD-882

CST2

125°C (Max)

1SS417CT,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA FSC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 620mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 40V
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)

封裝: 2-SMD, Flat Lead

庫存3,536

40V

100mA

620mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

5µA @ 40V

15pF @ 0V, 1MHz

Surface Mount

2-SMD, Flat Lead

fSC

125°C (Max)

1SS424(TPL3,F)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 200MA SSM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 20V
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)

封裝: SC-75, SOT-416

庫存2,528

20V

200mA

500mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

50µA @ 20V

20pF @ 0V, 1MHz

Surface Mount

SC-75, SOT-416

SSM

125°C (Max)

1SS389,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 100MA ESC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 10V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20µA @ 10V
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)

封裝: SC-79, SOD-523

庫存5,376

10V

100mA

500mV @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

-

20µA @ 10V

40pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

ESC

125°C (Max)

CUS520,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 200MA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 280mV @ 10mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 30V
Capacitance @ Vr, F: 17pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

封裝: SC-76, SOD-323

庫存2,432

30V

200mA

280mV @ 10mA

Fast Recovery =< 500ns, > 200mA (Io)

-

5µA @ 30V

17pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

USC

125°C (Max)