Vishay Siliconix 產品 - 電晶體 - FET、MOSFET - 單 | 黑森爾電子
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Vishay Siliconix 產品 - 電晶體 - FET、MOSFET - 單

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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot SI1469DH-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 2.7A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
封裝: 6-TSSOP, SC-88, SOT-363
庫存36,000
MOSFET (Metal Oxide)
20V
2.7A (Tc)
2.5V, 10V
1.5V @ 250µA
8.5nC @ 4.5V
470pF @ 10V
±12V
-
1.5W (Ta), 2.78W (Tc)
80 mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6 (SOT-363)
6-TSSOP, SC-88, SOT-363
hot SI2338DS-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 6A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存1,104,012
MOSFET (Metal Oxide)
30V
6A (Tc)
4.5V, 10V
2.5V @ 250µA
13nC @ 10V
424pF @ 15V
±20V
-
1.3W (Ta), 2.5W (Tc)
28 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
hot SI2318DS-T1-E3
Vishay Siliconix

MOSFET N-CH 40V 3A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存1,262,316
MOSFET (Metal Oxide)
40V
3A (Ta)
4.5V, 10V
3V @ 250µA
15nC @ 10V
540pF @ 20V
±20V
-
750mW (Ta)
45 mOhm @ 3.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SIA483DJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 12A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-70-6 Single
  • Package / Case: PowerPAK? SC-70-6
封裝: PowerPAK? SC-70-6
庫存18,264
MOSFET (Metal Oxide)
30V
12A (Tc)
4.5V, 10V
2.2V @ 250µA
45nC @ 10V
1550pF @ 15V
±20V
-
3.5W (Ta), 19W (Tc)
21 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Single
PowerPAK? SC-70-6
hot SI8800EDB-T2-E1
Vishay Siliconix

MOSFET N-CH 20V MICROFOOT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-Microfoot
  • Package / Case: 4-XFBGA, CSPBGA
封裝: 4-XFBGA, CSPBGA
庫存2,020,728
MOSFET (Metal Oxide)
20V
-
1.5V, 4.5V
1V @ 250µA
8.3nC @ 8V
-
±8V
-
500mW (Ta)
80 mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
4-Microfoot
4-XFBGA, CSPBGA
hot SI2307BDS-T1-E3
Vishay Siliconix

MOSFET P-CH 30V 2.5A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存844,944
MOSFET (Metal Oxide)
30V
2.5A (Ta)
4.5V, 10V
3V @ 250µA
15nC @ 10V
380pF @ 15V
±20V
-
750mW (Ta)
78 mOhm @ 3.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SI2308BDS-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 2.3A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)
  • Rds On (Max) @ Id, Vgs: 156 mOhm @ 1.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存927,108
MOSFET (Metal Oxide)
60V
2.3A (Tc)
4.5V, 10V
3V @ 250µA
6.8nC @ 10V
190pF @ 30V
±20V
-
1.09W (Ta), 1.66W (Tc)
156 mOhm @ 1.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SI3433CDV-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 6A 6TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 5.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封裝: SOT-23-6 Thin, TSOT-23-6
庫存5,172,012
MOSFET (Metal Oxide)
20V
6A (Tc)
1.8V, 4.5V
1V @ 250µA
45nC @ 8V
1300pF @ 10V
±8V
-
1.6W (Ta), 3.3W (Tc)
38 mOhm @ 5.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
hot SI2308BDS-T1-E3
Vishay Siliconix

MOSFET N-CH 60V 2.3A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)
  • Rds On (Max) @ Id, Vgs: 156 mOhm @ 1.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存936,156
MOSFET (Metal Oxide)
60V
2.3A (Tc)
4.5V, 10V
3V @ 250µA
6.8nC @ 10V
190pF @ 30V
±20V
-
1.09W (Ta), 1.66W (Tc)
156 mOhm @ 1.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SI2312CDS-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 6A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 31.8 mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存2,264,160
MOSFET (Metal Oxide)
20V
6A (Tc)
1.8V, 4.5V
1V @ 250µA
18nC @ 5V
865pF @ 10V
±8V
-
1.25W (Ta), 2.1W (Tc)
31.8 mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SI2377EDS-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 4.4A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 61 mOhm @ 3.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存980,064
MOSFET (Metal Oxide)
20V
4.4A (Tc)
1.5V, 4.5V
1V @ 250µA
21nC @ 8V
-
±8V
-
1.25W (Ta), 1.8W (Tc)
61 mOhm @ 3.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SI2312BDS-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 3.9A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 850mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存1,403,964
MOSFET (Metal Oxide)
20V
3.9A (Ta)
1.8V, 4.5V
850mV @ 250µA
12nC @ 4.5V
-
±8V
-
750mW (Ta)
31 mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SI2312BDS-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 3.9A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 850mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存1,757,004
MOSFET (Metal Oxide)
20V
3.9A (Ta)
1.8V, 4.5V
850mV @ 250µA
12nC @ 4.5V
-
±8V
-
750mW (Ta)
31 mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SI2369DS-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 7.6A TO-236

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存745,560
MOSFET (Metal Oxide)
30V
7.6A (Tc)
4.5V, 10V
2.5V @ 250µA
36nC @ 10V
1295pF @ 15V
±20V
-
1.25W (Ta), 2.5W (Tc)
29 mOhm @ 5.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236
TO-236-3, SC-59, SOT-23-3
SIA461DJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 12A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3.4W (Ta), 17.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-70-6 Single
  • Package / Case: PowerPAK? SC-70-6
封裝: PowerPAK? SC-70-6
庫存211,080
MOSFET (Metal Oxide)
20V
12A (Tc)
1.8V, 4.5V
1V @ 250µA
45nC @ 8V
1300pF @ 10V
±8V
-
3.4W (Ta), 17.9W (Tc)
33 mOhm @ 5.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Single
PowerPAK? SC-70-6
hot SI2300DS-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 3.6A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 68 mOhm @ 2.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存1,723,188
MOSFET (Metal Oxide)
30V
3.6A (Tc)
2.5V, 4.5V
1.5V @ 250µA
10nC @ 10V
320pF @ 15V
±12V
-
1.1W (Ta), 1.7W (Tc)
68 mOhm @ 2.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SI2315BDS-T1-E3
Vishay Siliconix

MOSFET P-CH 12V 3A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.85A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存660,156
MOSFET (Metal Oxide)
12V
3A (Ta)
1.8V, 4.5V
900mV @ 250µA
15nC @ 4.5V
715pF @ 6V
±8V
-
750mW (Ta)
50 mOhm @ 3.85A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SI1013X-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 350MA SC89-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-3
  • Package / Case: SC-89, SOT-490
封裝: SC-89, SOT-490
庫存1,145,472
MOSFET (Metal Oxide)
20V
350mA (Ta)
1.8V, 4.5V
450mV @ 250µA (Min)
1.5nC @ 4.5V
-
±6V
-
250mW (Ta)
1.2 Ohm @ 350mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-89-3
SC-89, SOT-490
hot SI2318CDS-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 5.6A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存936,408
MOSFET (Metal Oxide)
40V
5.6A (Tc)
4.5V, 10V
2.5V @ 250µA
9nC @ 10V
340pF @ 20V
±20V
-
1.25W (Ta), 2.1W (Tc)
42 mOhm @ 4.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SI1317DL-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 1.4A SC70

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.4A, 4.5V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
封裝: SC-70, SOT-323
庫存549,096
MOSFET (Metal Oxide)
20V
1.4A (Tc)
1.8V, 4.5V
800mV @ 250µA
6.5nC @ 4.5V
272pF @ 10V
±8V
-
400mW (Ta), 500mW (Tc)
150 mOhm @ 1.4A, 4.5V
-50°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
hot SI1012R-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 500MA SC-75A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
封裝: SC-75A
庫存4,487,496
MOSFET (Metal Oxide)
20V
500mA (Ta)
1.8V, 4.5V
900mV @ 250µA
0.75nC @ 4.5V
-
±6V
-
150mW (Ta)
700 mOhm @ 600mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75A
SC-75A
hot SI1032R-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 140MA SC-75A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
封裝: SC-75A
庫存1,641,024
MOSFET (Metal Oxide)
20V
140mA (Ta)
1.5V, 4.5V
1.2V @ 250µA
0.75nC @ 4.5V
-
±6V
-
250mW (Ta)
5 Ohm @ 200mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75A
SC-75A
hot SI2304BDS-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 2.6A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存1,415,160
MOSFET (Metal Oxide)
30V
2.6A (Ta)
4.5V, 10V
3V @ 250µA
4nC @ 5V
225pF @ 15V
±20V
-
750mW (Ta)
70 mOhm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot TP0610K-T1-E3
Vishay Siliconix

MOSFET P-CH 60V 185MA SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存1,142,724
MOSFET (Metal Oxide)
60V
185mA (Ta)
4.5V, 10V
3V @ 250µA
1.7nC @ 15V
23pF @ 25V
±20V
-
350mW (Ta)
6 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SI2301BDS-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 2.2A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 6V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存3,796,380
MOSFET (Metal Oxide)
20V
2.2A (Ta)
2.5V, 4.5V
950mV @ 250µA
10nC @ 4.5V
375pF @ 6V
±8V
-
700mW (Ta)
100 mOhm @ 2.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SI2347DS-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 5A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存752,700
MOSFET (Metal Oxide)
30V
5A (Tc)
4.5V, 10V
2.5V @ 250µA
22nC @ 10V
705pF @ 15V
±20V
-
1.2W (Ta), 1.7W (Tc)
42 mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
hot SI2371EDS-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 4.8A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存614,640
MOSFET (Metal Oxide)
30V
4.8A (Tc)
2.5V, 10V
1.5V @ 250µA
35nC @ 10V
-
±12V
-
1W (Ta), 1.7W (Tc)
45 mOhm @ 3.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
hot SI2302CDS-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 2.6A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 850mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 710mW (Ta)
  • Rds On (Max) @ Id, Vgs: 57 mOhm @ 3.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存735,192
MOSFET (Metal Oxide)
20V
2.6A (Ta)
2.5V, 4.5V
850mV @ 250µA
5.5nC @ 4.5V
-
±8V
-
710mW (Ta)
57 mOhm @ 3.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SI2301CDS-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 3.1A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 112 mOhm @ 2.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存1,250,268
MOSFET (Metal Oxide)
20V
3.1A (Tc)
2.5V, 4.5V
1V @ 250µA
10nC @ 4.5V
405pF @ 10V
±8V
-
860mW (Ta), 1.6W (Tc)
112 mOhm @ 2.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SI2301CDS-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 3.1A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 112 mOhm @ 2.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存3,803,688
MOSFET (Metal Oxide)
20V
3.1A (Tc)
2.5V, 4.5V
1V @ 250µA
10nC @ 4.5V
405pF @ 10V
±8V
-
860mW (Ta), 1.6W (Tc)
112 mOhm @ 2.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3