頁 182 - Vishay Siliconix 產品 | 黑森爾電子
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Vishay Siliconix 產品

記錄 5,544
頁  182/185
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hot SUP75N03-04-E3
Vishay Siliconix

MOSFET N-CH 30V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10742pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 187W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存60,012
SI4684DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 16A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 4.45W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存5,760
IRFZ44L
Vishay Siliconix

MOSFET N-CH 60V 50A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存5,856
hot IRFR310TRL
Vishay Siliconix

MOSFET N-CH 400V 1.7A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存17,460
hot IRFR310TRLPBF
Vishay Siliconix

MOSFET N-CH 400V 1.7A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存2,272,224
hot SIR670DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 60A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2815pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封裝: PowerPAK? SO-8
庫存10,584
hot SIS476DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 40A 1212-8 PWR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
封裝: PowerPAK? 1212-8
庫存7,504
IRFR9024PBF
Vishay Siliconix

MOSFET P-CH 60V 8.8A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存21,114
IRFI740GLCPBF
Vishay Siliconix

MOSFET N-CH 400V 5.7A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
封裝: TO-220-3 Full Pack, Isolated Tab
庫存20,010
hot IRFP27N60KPBF
Vishay Siliconix

MOSFET N-CH 600V 27A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
封裝: TO-247-3
庫存2,000
hot SI4477DY-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 26.6A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 26.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 6.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 18A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存433,620
hot SI2328DS-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 1.15A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 730mW (Ta)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存899,532
SQ1421EDH-T1_GE3
Vishay Siliconix

MOSFET P-CH 60V 1.6A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
封裝: 6-TSSOP, SC-88, SOT-363
庫存85,812
hot IRFL9110TRPBF
Vishay Siliconix

MOSFET P-CH 100V 1.1A SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 660mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封裝: TO-261-4, TO-261AA
庫存1,217,472
hot SQJ962EP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 8A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
  • Power - Max: 25W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
封裝: PowerPAK? SO-8 Dual
庫存32,892
SI7901EDN-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.3A 1212-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 800µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
封裝: PowerPAK? 1212-8 Dual
庫存6,448
SI7948DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 3A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
封裝: PowerPAK? SO-8 Dual
庫存2,880
SI5938DU-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 6A 8PWRPAK

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 8.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? ChipFET? Dual
  • Supplier Device Package: PowerPAK? ChipFet Dual
封裝: PowerPAK? ChipFET? Dual
庫存2,592
hot SI1016X-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V SOT563F

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
封裝: SOT-563, SOT-666
庫存1,431,360
SIA920DJ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 8V 4.5A SC-70

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.3A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 4V
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
封裝: PowerPAK? SC-70-6 Dual
庫存5,552
hot SIP2800DY-T1-E3
Vishay Siliconix

IC REG CTRLR MULT TOPOLOGY 8SOIC

  • Output Type: Transistor Driver
  • Function: Step-Up, Step-Down, Step-Up/Step-Down
  • Output Configuration: Positive, Isolation Capable
  • Topology: Buck, Boost, Buck-Boost
  • Number of Outputs: 1
  • Output Phases: 1
  • Voltage - Supply (Vcc/Vdd): 6.9 V ~ 12 V
  • Frequency - Switching: 46kHz
  • Duty Cycle (Max): 99%
  • Synchronous Rectifier: No
  • Clock Sync: No
  • Serial Interfaces: -
  • Control Features: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存20,256
hot SI9987CY-T1-E3
Vishay Siliconix

IC MOTOR DRIVER PAR 8SOIC

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: Brushed DC, Voice Coil Motor
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (2)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 1A
  • Voltage - Supply: 3.8 V ~ 13.2 V
  • Voltage - Load: 3.8 V ~ 13.2 V
  • Operating Temperature: 0°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存23,352
DG408LDY-T1
Vishay Siliconix

IC MUX CMOS ANG DUAL 8CH 16SOIC

  • Switch Circuit: -
  • Multiplexer/Demultiplexer Circuit: 8:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 29 Ohm
  • Channel-to-Channel Matching (ΔRon): 1 Ohm
  • Voltage - Supply, Single (V+): 2.7 V ~ 12 V
  • Voltage - Supply, Dual (V±): ±3 V ~ 6 V
  • Switch Time (Ton, Toff) (Max): 55ns, 25ns
  • -3db Bandwidth: -
  • Charge Injection: 1pC
  • Channel Capacitance (CS(off), CD(off)): 7pF, 20pF
  • Current - Leakage (IS(off)) (Max): 1nA
  • Crosstalk: -82dB @ 100kHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
封裝: 16-SOIC (0.154", 3.90mm Width)
庫存5,856
DG308ADY-T1
Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

  • Switch Circuit: SPST - NO
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 100 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): -
  • Voltage - Supply, Dual (V±): ±15V
  • Switch Time (Ton, Toff) (Max): 200ns, 150ns
  • -3db Bandwidth: -
  • Charge Injection: -10pC
  • Channel Capacitance (CS(off), CD(off)): 11pF, 8pF
  • Current - Leakage (IS(off)) (Max): 1nA
  • Crosstalk: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
封裝: 16-SOIC (0.154", 3.90mm Width)
庫存4,416
hot DG9232DY-T1-E3
Vishay Siliconix

IC SWITCH DUAL SPST 8SOIC

  • Switch Circuit: SPST - NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 30 Ohm
  • Channel-to-Channel Matching (ΔRon): 400 mOhm
  • Voltage - Supply, Single (V+): 2.7 V ~ 12 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 75ns, 50ns
  • -3db Bandwidth: -
  • Charge Injection: 2pC
  • Channel Capacitance (CS(off), CD(off)): 7pF, 13pF
  • Current - Leakage (IS(off)) (Max): 100pA
  • Crosstalk: -90dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存16,644
hot DG428DN
Vishay Siliconix

IC MUX ANLG 8CH W/LATCH 20PLCC

  • Switch Circuit: -
  • Multiplexer/Demultiplexer Circuit: 8:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 100 Ohm
  • Channel-to-Channel Matching (ΔRon): 5 Ohm
  • Voltage - Supply, Single (V+): 12V
  • Voltage - Supply, Dual (V±): ±15V
  • Switch Time (Ton, Toff) (Max): 150ns, 150ns
  • -3db Bandwidth: -
  • Charge Injection: 1pC
  • Channel Capacitance (CS(off), CD(off)): 11pF, 40pF
  • Current - Leakage (IS(off)) (Max): 500pA
  • Crosstalk: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 20-LCC (J-Lead)
  • Supplier Device Package: 20-PLCC (9x9)
封裝: 20-LCC (J-Lead)
庫存4,816
DG409LEDQ-GE3
Vishay Siliconix

IC MUX CMOS DUAL 4CH 16-TSSOP

  • Switch Circuit: SP4T
  • Multiplexer/Demultiplexer Circuit: 4:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 23 Ohm
  • Channel-to-Channel Matching (ΔRon): 1 Ohm
  • Voltage - Supply, Single (V+): 3 V ~ 16 V
  • Voltage - Supply, Dual (V±): ±3.3 V ~ 8 V
  • Switch Time (Ton, Toff) (Max): 72ns, 47ns
  • -3db Bandwidth: -
  • Charge Injection: -10pC
  • Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
  • Current - Leakage (IS(off)) (Max): 1nA
  • Crosstalk: -109dB @ 100kHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOP
封裝: 16-TSSOP (0.173", 4.40mm Width)
庫存5,520
DG2537DQ-T1-GE3
Vishay Siliconix

IC SWITCH SPST 4.5 OHM 10MSOP

  • Switch Circuit: SPST - NO
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 4.5 Ohm
  • Channel-to-Channel Matching (ΔRon): 200 mOhm
  • Voltage - Supply, Single (V+): 2.6 V ~ 4.3 V
  • Voltage - Supply, Dual (V±): ±2.5V
  • Switch Time (Ton, Toff) (Max): 30ns, 35ns
  • -3db Bandwidth: 366MHz
  • Charge Injection: 2.2pC
  • Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
  • Current - Leakage (IS(off)) (Max): 250pA
  • Crosstalk: -90dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 10-MSOP
封裝: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
庫存3,056
hot DG411DJ-E3
Vishay Siliconix

IC SWITCH QUAD SPST 16-DIP

  • Switch Circuit: SPST - NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 35 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): 5 V ~ 44 V
  • Voltage - Supply, Dual (V±): ±5 V ~ 20 V
  • Switch Time (Ton, Toff) (Max): 175ns, 145ns
  • -3db Bandwidth: -
  • Charge Injection: 5pC
  • Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
  • Current - Leakage (IS(off)) (Max): 250pA
  • Crosstalk: -85dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
封裝: 16-DIP (0.300", 7.62mm)
庫存51,600
DG9431EDV-T1-GE3
Vishay Siliconix

IC SWITCH LV SPDT 6TSOP

  • Switch Circuit: -
  • Multiplexer/Demultiplexer Circuit: -
  • Number of Circuits: -
  • On-State Resistance (Max): -
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): -
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): -
  • -3db Bandwidth: -
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): -
  • Current - Leakage (IS(off)) (Max): -
  • Crosstalk: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存2,656