頁 6 - Infineon Technologies 產品 - 二極體 - 整流器 - 單 | 黑森爾電子
聯繫我們
SalesDept@heisener.com +86-755-83210559-827
登入/註冊
Language Translation

* Please refer to the English Version as our Official Version.

BOM
購物車 0

Infineon Technologies 產品 - 二極體 - 整流器 - 單

記錄 805
頁  6/29
圖片
零件編號
製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
IDW100E60FKSA1
Infineon Technologies

DIODE GP 600V 150A TO247-3-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 100 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 120 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存1,479
600 V
150A
2 V @ 100 A
Fast Recovery =< 500ns, > 200mA (Io)
120 ns
40 µA @ 600 V
-
Through Hole
TO-247-3
PG-TO247-3-1
-55°C ~ 175°C
D2450N02TXPSA1
Infineon Technologies

DIODE GEN PURP 200V 2450A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2450A
  • Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封裝: -
Request a Quote
200 V
2450A
880 mV @ 2000 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 200 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 180°C
IDV06S60C
Infineon Technologies

RECTIFIER DIODE, SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
IDWD50E65E7XKSA1
Infineon Technologies

INDUSTRY 14

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 92A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 94 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2-2
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
庫存675
650 V
92A
2.1 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
94 ns
20 µA @ 650 V
-
Through Hole
TO-247-2
PG-TO247-2-2
-40°C ~ 175°C
IDWD120E120D7XKSA1
Infineon Technologies

INDUSTRY 14

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
庫存720
-
-
-
-
-
-
-
-
-
-
-
SIDC08D60C8X7SA1
Infineon Technologies

DIODE GEN PURP 600V 30A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
600 V
30A
1.95 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
BAT64E6327HTSA1
Infineon Technologies

DIODE SCHOTTKY 40V 120MA SOT23

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 120mA
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 30 V
  • Capacitance @ Vr, F: 6pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23
  • Operating Temperature - Junction: 150°C (Max)
封裝: -
庫存94,215
40 V
120mA
750 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 30 V
6pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23
150°C (Max)
BAS3010S02LRHE6327XTSA1
Infineon Technologies

DIODE SCHOTTKY 30V 1A TSLP-2-17

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 30 V
  • Capacitance @ Vr, F: 15pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: PG-TSLP-2-17
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存147,678
30 V
1A
650 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 30 V
15pF @ 5V, 1MHz
Surface Mount
SOD-882
PG-TSLP-2-17
-55°C ~ 150°C
SIDC06D60F6X7SA1
Infineon Technologies

DIODE GEN PURP 600V 15A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
600 V
15A
1.6 V @ 15 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
D251K18BB01XPSA1
Infineon Technologies

DIODE GP 1.8KV 255A DSW27-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 255A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: BG-DSW27-1
  • Supplier Device Package: BG-DSW27-1
  • Operating Temperature - Junction: -40°C ~ 180°C
封裝: -
Request a Quote
1800 V
255A
-
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1800 V
-
Stud Mount
BG-DSW27-1
BG-DSW27-1
-40°C ~ 180°C
AIDK10S65C5ATMA1
Infineon Technologies

DISCRETE DIODES

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 650 V
  • Capacitance @ Vr, F: 303pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
650 V
10A
1.7 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
60 µA @ 650 V
303pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-2
-40°C ~ 175°C
D2601NH90TXPSA1
Infineon Technologies

DIODE GEN PURP 9KV 1790A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 9000 V
  • Current - Average Rectified (Io): 1790A
  • Voltage - Forward (Vf) (Max) @ If: 5.5 V @ 4000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: 0°C ~ 140°C
封裝: -
Request a Quote
9000 V
1790A
5.5 V @ 4000 A
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 9000 V
-
Chassis Mount
DO-200AE
-
0°C ~ 140°C
DZ1070N18KHPSA3
Infineon Technologies

DIODE GP 1.8KV 1100A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 1100A
  • Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
庫存9
1800 V
1100A
1.11 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 1800 V
-
Chassis Mount
Module
Module
-40°C ~ 150°C
D452N16EXPSA1
Infineon Technologies

DIODE GEN PURP 1.6KV 450A FL54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 450A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Screw Mount
  • Package / Case: Nonstandard
  • Supplier Device Package: FL54
  • Operating Temperature - Junction: -40°C ~ 180°C
封裝: -
Request a Quote
1600 V
450A
-
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 1600 V
-
Screw Mount
Nonstandard
FL54
-40°C ~ 180°C
IDH09SG60CXKSA2
Infineon Technologies

DIODE SIL CARB 600V 9A TO220-2-1

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 9A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 80 µA @ 600 V
  • Capacitance @ Vr, F: 280pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
600 V
9A
2.1 V @ 9 A
No Recovery Time > 500mA (Io)
0 ns
80 µA @ 600 V
280pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
D56U45CPRXPSA1
Infineon Technologies

DIODE GP 4.5KV 102A DSW272-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 102A
  • Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3.3 µs
  • Current - Reverse Leakage @ Vr: 5 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: Stud
  • Supplier Device Package: BG-DSW272-1
  • Operating Temperature - Junction: 125°C
封裝: -
Request a Quote
4500 V
102A
4.5 V @ 320 A
Standard Recovery >500ns, > 200mA (Io)
3.3 µs
5 mA @ 4500 V
-
Stud Mount
Stud
BG-DSW272-1
125°C
D3501N42TVFXPSA1
Infineon Technologies

DIODE GP 4.2KV 4870A D12035K-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4200 V
  • Current - Average Rectified (Io): 4870A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 4200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: BG-D12035K-1
  • Operating Temperature - Junction: 160°C (Max)
封裝: -
Request a Quote
4200 V
4870A
-
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 4200 V
-
Chassis Mount
DO-200AE
BG-D12035K-1
160°C (Max)
D251N08BXPSA1
Infineon Technologies

DIODE GEN PURP 800V 255A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 255A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封裝: -
Request a Quote
800 V
255A
-
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 800 V
-
Stud Mount
DO-205AA, DO-8, Stud
-
-40°C ~ 180°C
38DN06B02ELEMPRXPSA1
Infineon Technologies

DIODE GP 600V 5140A D-ELEM-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5140A
  • Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: BG-D-ELEM-1
  • Operating Temperature - Junction: 180°C (Max)
封裝: -
Request a Quote
600 V
5140A
960 mV @ 4500 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 600 V
-
Clamp On
DO-200AA, A-PUK
BG-D-ELEM-1
180°C (Max)
AIDW16S65C5XKSA1
Infineon Technologies

DIODE SIL CARB 650V 16A TO247-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 650 V
  • Capacitance @ Vr, F: 471pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-41
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
650 V
16A
1.7 V @ 16 A
No Recovery Time > 500mA (Io)
0 ns
90 µA @ 650 V
471pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3-41
-40°C ~ 175°C
D1481N68TXPSA1
Infineon Technologies

DIODE GEN PURP 6.8KV 2200A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6800 V
  • Current - Average Rectified (Io): 2200A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 6800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封裝: -
Request a Quote
6800 V
2200A
1.8 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 6800 V
-
Clamp On
DO-200AC, K-PUK
-
-40°C ~ 160°C
DZ435N40KS01HPSA1
Infineon Technologies

DIODE GEN PURP 4KV 700A PB501-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4000 V
  • Current - Average Rectified (Io): 700A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 4000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB501-1
  • Operating Temperature - Junction: 150°C (Max)
封裝: -
Request a Quote
4000 V
700A
-
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 4000 V
-
Chassis Mount
Module
BG-PB501-1
150°C (Max)
IDL08G65C5XUMA2
Infineon Technologies

DIODE SIL CARBIDE 650V 8A VSON-4

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 140 µA @ 650 V
  • Capacitance @ Vr, F: 250pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-PowerTSFN
  • Supplier Device Package: PG-VSON-4
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存21,984
650 V
8A
1.7 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
140 µA @ 650 V
250pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 150°C
D251N18BXPSA1
Infineon Technologies

DIODE GEN PURP 1.8KV 255A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 255A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封裝: -
Request a Quote
1800 V
255A
-
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1800 V
-
Stud Mount
DO-205AA, DO-8, Stud
-
-40°C ~ 180°C
IDD04SG60CXTMA2
Infineon Technologies

DIODE SIL CARB 600V 4A TO252-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 4 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 25 µA @ 600 V
  • Capacitance @ Vr, F: 80pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存35,649
600 V
4A
2.3 V @ 4 A
No Recovery Time > 500mA (Io)
0 ns
25 µA @ 600 V
80pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
SIDC07D60F6X1SA5
Infineon Technologies

DIODE GEN PURP 600V 22.5A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 22.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
600 V
22.5A
1.6 V @ 22.5 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC07D60F6X1SA2
Infineon Technologies

DIODE GP 600V 22.5A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 22.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
Request a Quote
600 V
22.5A
1.6 V @ 22.5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
SIDC07D60F6X1SA1
Infineon Technologies

DIODE GEN PURP 600V 22.5A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 22.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
600 V
22.5A
1.6 V @ 22.5 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C