頁 38 - ISSI, Integrated Silicon Solution Inc 產品 - 記憶體

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS49NLC93200A-18WBL	ISSI, Integrated Silicon Solution Inc	RLDRAM2 Memory, 288Mbit, x9, Com Memory Type: Volatile Memory Format: DRAM Technology: RLDRAM 2 Memory Size: 288Mbit Memory Interface: HSTL Clock Frequency: 533 MHz Write Cycle Time - Word, Page: - Access Time: 15 ns Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-TWBGA (11x18.5)	封裝: -	Request a Quote	DRAM	RLDRAM 2	288Mbit	HSTL	533 MHz	-	15 ns	1.7V ~ 1.9V	0°C ~ 95°C (TC)	Surface Mount	144-TFBGA	144-TWBGA (11x18.5)
IS25WE01G-RILE-TR	ISSI, Integrated Silicon Solution Inc	1Gb QPI/QSPI, 24-ball LFBGA 6x8m Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 50µs, 1ms Access Time: 10 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-LBGA Supplier Device Package: 24-LFBGA (6x8)	封裝: -	Request a Quote	FLASH	FLASH - NOR (SLC)	1Gbit	SPI - Quad I/O, QPI, DTR	104 MHz	50µs, 1ms	10 ns	1.7V ~ 1.95V	-40°C ~ 105°C (TA)	Surface Mount	24-LBGA	24-LFBGA (6x8)
IS43LQ16128A-062TBLI-TR	ISSI, Integrated Silicon Solution Inc	2G, 1.06-1.17/1.70-1.95V, LPDDR4 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 2Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	封裝: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	2Gbit	LVSTL	1.6 GHz	18ns	3.5 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 95°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
IS46LQ16128A-062TBLA1-TR	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +95C), 2G Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 2Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	封裝: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	2Gbit	LVSTL	1.6 GHz	18ns	3.5 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 95°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
IS46TR16640B-125KBLA3-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1GBIT PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封裝: -	Request a Quote	DRAM	SDRAM - DDR3	1Gbit	Parallel	800 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 125°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS62WVS5128GBLL-45NLI-TR	ISSI, Integrated Silicon Solution Inc	4Mb, Serial SRAM, 2.7V-3.6V, 45M Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4Mbit Memory Interface: SPI - Quad I/O, SDI Clock Frequency: 45 MHz Write Cycle Time - Word, Page: - Access Time: 15 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	SRAM	SRAM - Synchronous	4Mbit	SPI - Quad I/O, SDI	45 MHz	-	15 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IS62WV25616EBLL-45TI	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT PARALLEL 44TSOP II Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封裝: -	Request a Quote	SRAM	SRAM - Asynchronous	4Mbit	Parallel	-	45ns	45 ns	2.2V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
IS25WP512M-RMLA3-TR	ISSI, Integrated Silicon Solution Inc	512Mb QPI/QSPI, 16-pin SOP 300Mi Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 512Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 112 MHz Write Cycle Time - Word, Page: 50µs, 1ms Access Time: 7.5 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封裝: -	Request a Quote	FLASH	FLASH - NOR (SLC)	512Mbit	SPI - Quad I/O, QPI, DTR	112 MHz	50µs, 1ms	7.5 ns	1.7V ~ 1.95V	-40°C ~ 125°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IS46TR16640ED-125KBLA2	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +105C), 1 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gbit Memory Interface: SSTL_15 Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封裝: -	Request a Quote	DRAM	SDRAM - DDR3	1Gbit	SSTL_15	800 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS46TR16640ED-125KBLA1	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +95C), 1G Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gbit Memory Interface: SSTL_15 Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封裝: -	Request a Quote	DRAM	SDRAM - DDR3	1Gbit	SSTL_15	800 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS25WP512M-RMLA3-TY	ISSI, Integrated Silicon Solution Inc	IC FLASH 512MBIT SERIAL 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 50µs, 2ms Access Time: 7.5 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封裝: -	Request a Quote	FLASH	FLASH - NOR	512Mbit	SPI - Quad I/O, QPI, DTR	133 MHz	50µs, 2ms	7.5 ns	1.7V ~ 1.95V	-40°C ~ 125°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IS46TR16640ED-125KBLA3	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +125C), 1 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gbit Memory Interface: SSTL_15 Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封裝: -	Request a Quote	DRAM	SDRAM - DDR3	1Gbit	SSTL_15	800 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 125°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS62WV25616EBLL-45BI	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT PARALLEL 48VFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	封裝: -	Request a Quote	SRAM	SRAM - Asynchronous	4Mbit	Parallel	-	45ns	45 ns	2.2V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
IS43DR16640A-3DBI	ISSI, Integrated Silicon Solution Inc	IC DRAM 1GBIT PARALLEL 84TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 333 MHz Write Cycle Time - Word, Page: 15ns Access Time: 450 ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-TWBGA (8x13.65)	封裝: -	Request a Quote	DRAM	SDRAM - DDR2	1Gbit	Parallel	333 MHz	15ns	450 ps	1.7V ~ 1.9V	-40°C ~ 85°C (TA)	Surface Mount	84-TFBGA	84-TWBGA (8x13.65)
IS46TR85120AL-125KBLA1	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT PARALLEL 78TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (9x10.5)	封裝: -	Request a Quote	DRAM	SDRAM - DDR3L	4Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (9x10.5)
IS46TR85120AL-125KBLA2	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT PARALLEL 78TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (9x10.5)	封裝: -	Request a Quote	DRAM	SDRAM - DDR3L	4Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 105°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (9x10.5)
IS25LP040E-JNLA3-TR	ISSI, Integrated Silicon Solution Inc	4Mb QSPI, 8-pin SOP 150Mil, RoHS Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 4Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 40µs, 1.2ms Access Time: 8 ns Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	Request a Quote	FLASH	FLASH - NOR (SLC)	4Mbit	SPI - Quad I/O, QPI	104 MHz	40µs, 1.2ms	8 ns	2.3V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
IS21TF64G-JQLI-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 512GBIT EMMC 100LFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 512Gbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-LFBGA (14x18)	封裝: -	Request a Quote	FLASH	FLASH - NAND (TLC)	512Gbit	eMMC_5.1	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	100-LBGA	100-LFBGA (14x18)
IS25WP020E-JYLE-TR	ISSI, Integrated Silicon Solution Inc	2Mb QSPI, 8-pin USON 2x3mm , RoH Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 2Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 40µs, 1.2ms Access Time: 8 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-USON (2x3)	封裝: -	Request a Quote	FLASH	FLASH - NOR (SLC)	2Mbit	SPI - Quad I/O, QPI	104 MHz	40µs, 1.2ms	8 ns	1.7V ~ 1.95V	-40°C ~ 105°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-USON (2x3)
IS43TR16512S2DL-107MBL-TR	ISSI, Integrated Silicon Solution Inc	8G, 1.35V, DDR3L, 512Mx16, 1866M Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-LFBGA Supplier Device Package: 96-LWBGA (9x13)	封裝: -	Request a Quote	DRAM	SDRAM - DDR3L	8Gbit	Parallel	933 MHz	15ns	20 ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	96-LFBGA	96-LWBGA (9x13)
IS21TF64G-JCLI	ISSI, Integrated Silicon Solution Inc	IC FLASH 512GBIT EMMC 153VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 512Gbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	封裝: -	庫存330	FLASH	FLASH - NAND (TLC)	512Gbit	eMMC_5.1	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	153-VFBGA	153-VFBGA (11.5x13)
IS25LP01G-RILA3	ISSI, Integrated Silicon Solution Inc	1Gb QPI/QSPI, 24-ball LFBGA 6x8m Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 50µs, 1ms Access Time: 8 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-LBGA Supplier Device Package: 24-LFBGA (6x8)	封裝: -	Request a Quote	FLASH	FLASH - NOR (SLC)	1Gbit	SPI - Quad I/O, QPI, DTR	133 MHz	50µs, 1ms	8 ns	2.7V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	24-LBGA	24-LFBGA (6x8)
IS65WV102416EBLL-55BLA3-TR	ISSI, Integrated Silicon Solution Inc	16Mb, Low Power/Power Saver,Asyn Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	封裝: -	Request a Quote	SRAM	SRAM - Asynchronous	16Mbit	Parallel	-	55ns	55 ns	2.2V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
IS43LQ16128AL-062TBLI-TR	ISSI, Integrated Silicon Solution Inc	2G, 0.57-0.65V/1.06-1.17/1.70-1. Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 2Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	封裝: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	2Gbit	LVSTL	1.6 GHz	18ns	3.5 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 95°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
IS64WV51216EEBLL-10BLA3-TR	ISSI, Integrated Silicon Solution Inc	8Mb,High-Speed/Low Power,Async w Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10 ns Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	封裝: -	Request a Quote	SRAM	SRAM - Asynchronous	8Mbit	Parallel	-	10ns	10 ns	2.4V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
IS22EF08G-JCLA2	ISSI, Integrated Silicon Solution Inc	8GB, 153 BALL FBGA, 3.3V, ROHS, Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (MLC) Memory Size: 64Gbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	封裝: -	Request a Quote	FLASH	FLASH - NAND (MLC)	64Gbit	eMMC_5.1	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	153-VFBGA	153-VFBGA (11.5x13)
IS49NLS96400A-18WBLI	ISSI, Integrated Silicon Solution Inc	RLDRAM2 Memory, 576Mbit, x9, Sep Memory Type: Volatile Memory Format: DRAM Technology: RLDRAM 2 Memory Size: 576Mbit Memory Interface: HSTL Clock Frequency: 533 MHz Write Cycle Time - Word, Page: - Access Time: 15 ns Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-TWBGA (11x18.5)	封裝: -	Request a Quote	DRAM	RLDRAM 2	576Mbit	HSTL	533 MHz	-	15 ns	1.7V ~ 1.9V	-40°C ~ 85°C (TA)	Surface Mount	144-TFBGA	144-TWBGA (11x18.5)
IS46LQ16128A-062TBLA2-TR	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +105C), 2 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 2Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	封裝: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	2Gbit	LVSTL	1.6 GHz	18ns	3.5 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)

IS49NLC93200A-18WBL

ISSI, Integrated Silicon Solution Inc

RLDRAM2 Memory, 288Mbit, x9, Com

Memory Type: Volatile
Memory Format: DRAM
Technology: RLDRAM 2
Memory Size: 288Mbit
Memory Interface: HSTL
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: -
Access Time: 15 ns
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-TWBGA (11x18.5)

封裝: -

Request a Quote

DRAM

RLDRAM 2

288Mbit

HSTL

533 MHz

-

15 ns

1.7V ~ 1.9V

0°C ~ 95°C (TC)

Surface Mount

144-TFBGA

144-TWBGA (11x18.5)

IS25WE01G-RILE-TR

ISSI, Integrated Silicon Solution Inc

1Gb QPI/QSPI, 24-ball LFBGA 6x8m

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 50µs, 1ms
Access Time: 10 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-LBGA
Supplier Device Package: 24-LFBGA (6x8)

封裝: -

Request a Quote

FLASH

FLASH - NOR (SLC)

1Gbit

SPI - Quad I/O, QPI, DTR

104 MHz

50µs, 1ms

10 ns

1.7V ~ 1.95V

-40°C ~ 105°C (TA)

Surface Mount

24-LBGA

24-LFBGA (6x8)

IS43LQ16128A-062TBLI-TR

ISSI, Integrated Silicon Solution Inc

2G, 1.06-1.17/1.70-1.95V, LPDDR4

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 2Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

封裝: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

2Gbit

LVSTL

1.6 GHz

18ns

3.5 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 95°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

IS46LQ16128A-062TBLA1-TR

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 2G

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 2Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

封裝: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

2Gbit

LVSTL

1.6 GHz

18ns

3.5 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 95°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

IS46TR16640B-125KBLA3-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封裝: -

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DRAM

SDRAM - DDR3

1Gbit

Parallel

800 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 125°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS62WVS5128GBLL-45NLI-TR

ISSI, Integrated Silicon Solution Inc

4Mb, Serial SRAM, 2.7V-3.6V, 45M

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4Mbit
Memory Interface: SPI - Quad I/O, SDI
Clock Frequency: 45 MHz
Write Cycle Time - Word, Page: -
Access Time: 15 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

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SRAM

SRAM - Synchronous

4Mbit

SPI - Quad I/O, SDI

45 MHz

-

15 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IS62WV25616EBLL-45TI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT PARALLEL 44TSOP II

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

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SRAM

SRAM - Asynchronous

4Mbit

Parallel

-

45ns

45 ns

2.2V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

IS25WP512M-RMLA3-TR

ISSI, Integrated Silicon Solution Inc

512Mb QPI/QSPI, 16-pin SOP 300Mi

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 512Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 112 MHz
Write Cycle Time - Word, Page: 50µs, 1ms
Access Time: 7.5 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封裝: -

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FLASH

FLASH - NOR (SLC)

512Mbit

SPI - Quad I/O, QPI, DTR

112 MHz

50µs, 1ms

7.5 ns

1.7V ~ 1.95V

-40°C ~ 125°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

IS46TR16640ED-125KBLA2

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 1

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gbit
Memory Interface: SSTL_15
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封裝: -

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DRAM

SDRAM - DDR3

1Gbit

SSTL_15

800 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS46TR16640ED-125KBLA1

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 1G

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gbit
Memory Interface: SSTL_15
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封裝: -

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DRAM

SDRAM - DDR3

1Gbit

SSTL_15

800 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS25WP512M-RMLA3-TY

ISSI, Integrated Silicon Solution Inc

IC FLASH 512MBIT SERIAL 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 50µs, 2ms
Access Time: 7.5 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封裝: -

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FLASH

FLASH - NOR

512Mbit

SPI - Quad I/O, QPI, DTR

133 MHz

50µs, 2ms

7.5 ns

1.7V ~ 1.95V

-40°C ~ 125°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

IS46TR16640ED-125KBLA3

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +125C), 1

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gbit
Memory Interface: SSTL_15
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封裝: -

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DRAM

SDRAM - DDR3

1Gbit

SSTL_15

800 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 125°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS62WV25616EBLL-45BI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT PARALLEL 48VFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

封裝: -

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SRAM

SRAM - Asynchronous

4Mbit

Parallel

-

45ns

45 ns

2.2V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

IS43DR16640A-3DBI

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 84TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450 ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x13.65)

封裝: -

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DRAM

SDRAM - DDR2

1Gbit

Parallel

333 MHz

15ns

450 ps

1.7V ~ 1.9V

-40°C ~ 85°C (TA)

Surface Mount

84-TFBGA

84-TWBGA (8x13.65)

IS46TR85120AL-125KBLA1

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PARALLEL 78TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (9x10.5)

封裝: -

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DRAM

SDRAM - DDR3L

4Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (9x10.5)

IS46TR85120AL-125KBLA2

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PARALLEL 78TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (9x10.5)

封裝: -

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DRAM

SDRAM - DDR3L

4Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 105°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (9x10.5)

IS25LP040E-JNLA3-TR

ISSI, Integrated Silicon Solution Inc

4Mb QSPI, 8-pin SOP 150Mil, RoHS

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 4Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 40µs, 1.2ms
Access Time: 8 ns
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

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FLASH

FLASH - NOR (SLC)

4Mbit

SPI - Quad I/O, QPI

104 MHz

40µs, 1.2ms

8 ns

2.3V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

IS21TF64G-JQLI-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 512GBIT EMMC 100LFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 512Gbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-LFBGA (14x18)

封裝: -

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FLASH

FLASH - NAND (TLC)

512Gbit

eMMC_5.1

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

100-LBGA

100-LFBGA (14x18)

IS25WP020E-JYLE-TR

ISSI, Integrated Silicon Solution Inc

2Mb QSPI, 8-pin USON 2x3mm , RoH

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 2Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 40µs, 1.2ms
Access Time: 8 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-USON (2x3)

封裝: -

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FLASH

FLASH - NOR (SLC)

2Mbit

SPI - Quad I/O, QPI

104 MHz

40µs, 1.2ms

8 ns

1.7V ~ 1.95V

-40°C ~ 105°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-USON (2x3)

IS43TR16512S2DL-107MBL-TR

ISSI, Integrated Silicon Solution Inc

8G, 1.35V, DDR3L, 512Mx16, 1866M

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-LFBGA
Supplier Device Package: 96-LWBGA (9x13)

封裝: -

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DRAM

SDRAM - DDR3L

8Gbit

Parallel

933 MHz

15ns

20 ns

1.283V ~ 1.45V

0°C ~ 95°C (TC)

Surface Mount

96-LFBGA

96-LWBGA (9x13)

IS21TF64G-JCLI

ISSI, Integrated Silicon Solution Inc

IC FLASH 512GBIT EMMC 153VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 512Gbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

封裝: -

庫存330

FLASH

FLASH - NAND (TLC)

512Gbit

eMMC_5.1

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

153-VFBGA

153-VFBGA (11.5x13)

IS25LP01G-RILA3

ISSI, Integrated Silicon Solution Inc

1Gb QPI/QSPI, 24-ball LFBGA 6x8m

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 50µs, 1ms
Access Time: 8 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-LBGA
Supplier Device Package: 24-LFBGA (6x8)

封裝: -

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FLASH

FLASH - NOR (SLC)

1Gbit

SPI - Quad I/O, QPI, DTR

133 MHz

50µs, 1ms

8 ns

2.7V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

24-LBGA

24-LFBGA (6x8)

IS65WV102416EBLL-55BLA3-TR

ISSI, Integrated Silicon Solution Inc

16Mb, Low Power/Power Saver,Asyn

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

封裝: -

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SRAM

SRAM - Asynchronous

16Mbit

Parallel

-

55ns

55 ns

2.2V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

IS43LQ16128AL-062TBLI-TR

ISSI, Integrated Silicon Solution Inc

2G, 0.57-0.65V/1.06-1.17/1.70-1.

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 2Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

封裝: -

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DRAM

SDRAM - Mobile LPDDR4X

2Gbit

LVSTL

1.6 GHz

18ns

3.5 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 95°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

IS64WV51216EEBLL-10BLA3-TR

ISSI, Integrated Silicon Solution Inc

8Mb,High-Speed/Low Power,Async w

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10 ns
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

封裝: -

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SRAM

SRAM - Asynchronous

8Mbit

Parallel

-

10ns

10 ns

2.4V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

IS22EF08G-JCLA2

ISSI, Integrated Silicon Solution Inc

8GB, 153 BALL FBGA, 3.3V, ROHS,

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (MLC)
Memory Size: 64Gbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

封裝: -

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FLASH

FLASH - NAND (MLC)

64Gbit

eMMC_5.1

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

153-VFBGA

153-VFBGA (11.5x13)

IS49NLS96400A-18WBLI

ISSI, Integrated Silicon Solution Inc

RLDRAM2 Memory, 576Mbit, x9, Sep

Memory Type: Volatile
Memory Format: DRAM
Technology: RLDRAM 2
Memory Size: 576Mbit
Memory Interface: HSTL
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: -
Access Time: 15 ns
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-TWBGA (11x18.5)

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DRAM

RLDRAM 2

576Mbit

HSTL

533 MHz

-

15 ns

1.7V ~ 1.9V

-40°C ~ 85°C (TA)

Surface Mount

144-TFBGA

144-TWBGA (11x18.5)

IS46LQ16128A-062TBLA2-TR

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 2

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 2Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

封裝: -

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DRAM

SDRAM - Mobile LPDDR4

2Gbit

LVSTL

1.6 GHz

18ns

3.5 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)