頁 10 - IXYS 產品 - 二極體 - 整流器 - 單

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
DSEP12-12B	IXYS	DIODE GEN PURP 1.2KV 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3.25V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-220-2	庫存5,632	1200V	15A	3.25V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	100µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
DSI30-16A	IXYS	DIODE GEN PURP 1.6KV 30A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 1600V Capacitance @ Vr, F: 10pF @ 400V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C	封裝: TO-220-2	庫存5,776	1600V	30A	1.29V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	40µA @ 1600V	10pF @ 400V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
DHG10I1200PM	IXYS	DIODE GEN PURP 1.2KV 10A TO220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2.69V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 15µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220FPAC Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-220-2 Full Pack, Isolated Tab	庫存6,336	1200V	10A	2.69V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	15µA @ 1200V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FPAC	-55°C ~ 150°C
DSI30-12A	IXYS	DIODE GEN PURP 1.2KV 30A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 1200V Capacitance @ Vr, F: 10pF @ 400V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C	封裝: TO-220-2	庫存8,940	1200V	30A	1.29V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	40µA @ 1200V	10pF @ 400V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
DSEI12-10A	IXYS	DIODE GEN PURP 1KV 12A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 2.7V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 250µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C	封裝: TO-220-2	庫存9,828	1000V	12A	2.7V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	250µA @ 1000V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 150°C
DSEP8-12A	IXYS	DIODE GEN PURP 1.2KV 10A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2.94V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 60µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-220-2	庫存50,520	1200V	10A	2.94V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	60µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
DFE10I600PM	IXYS	DIODE GEN PURP 600V 10A TO220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220ACFP Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-220-2 Full Pack, Isolated Tab	庫存7,032	600V	10A	1.5V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	20µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220ACFP	-55°C ~ 150°C
DSEI8-06A	IXYS	DIODE GEN PURP 600V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C	封裝: TO-220-2	庫存156,948	600V	8A	1.5V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 150°C
MDO500-12N1	IXYS	DIODE MODULE 1.2KV 560A Y1-CU Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 560A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1200A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30mA @ 1200V Capacitance @ Vr, F: 762pF @ 400V, 1MHz Mounting Type: Chassis Mount Package / Case: Y1-CU Supplier Device Package: Y1-CU Operating Temperature - Junction: -	封裝: Y1-CU	庫存5,696	1200V	560A	1.3V @ 1200A	Standard Recovery >500ns, > 200mA (Io)	-	30mA @ 1200V	762pF @ 400V, 1MHz	Chassis Mount	Y1-CU	Y1-CU	-
DSA17-16A	IXYS	DIODE AVALANCHE 1.6KV 25A DO203 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -40°C ~ 180°C	封裝: DO-203AA, DO-4, Stud	庫存5,664	1600V	25A	1.36V @ 55A	Standard Recovery >500ns, > 200mA (Io)	-	4mA @ 1600V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-40°C ~ 180°C
DSEP60-12A	IXYS	DIODE GEN PURP 1.2KV 60A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 2.66V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 650µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-247-2	庫存7,536	1200V	60A	2.66V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	650µA @ 1200V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
DSEP12-12A	IXYS	DIODE GEN PURP 1.2KV 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.75V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-220-2	庫存46,500	1200V	15A	2.75V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	100µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
DSI30-08A	IXYS	DIODE GEN PURP 800V 30A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 800V Capacitance @ Vr, F: 10pF @ 400V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C	封裝: TO-220-2	庫存6,288	800V	30A	1.29V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	40µA @ 800V	10pF @ 400V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
DSEI12-06A	IXYS	DIODE GEN PURP 600V 14A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 14A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C	封裝: TO-220-2	庫存31,704	600V	14A	1.7V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 150°C
MDO500-22N1	IXYS	DIODE MODULE 2.2KV 560A Y1-CU Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io): 560A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1200A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30mA @ 2200V Capacitance @ Vr, F: 576pF @ 700V, 1MHz Mounting Type: Chassis Mount Package / Case: Y1-CU Supplier Device Package: Y1-CU Operating Temperature - Junction: -	封裝: Y1-CU	庫存5,072	2200V	560A	1.3V @ 1200A	Standard Recovery >500ns, > 200mA (Io)	-	30mA @ 2200V	576pF @ 700V, 1MHz	Chassis Mount	Y1-CU	Y1-CU	-
MEO550-02DA	IXYS	DIODE MODULE 200V 582A Y4-M6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 582A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 520A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Y4-M6 Supplier Device Package: Y4-M6 Operating Temperature - Junction: -40°C ~ 150°C	封裝: Y4-M6	庫存5,424	200V	582A	1.25V @ 520A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5mA @ 200V	-	Chassis Mount	Y4-M6	Y4-M6	-40°C ~ 150°C
UGE1112AY4	IXYS	DIODE MODULE 8KV 4.2A UGE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 8000V Current - Average Rectified (Io): 4.2A Voltage - Forward (Vf) (Max) @ If: 6.25V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 8000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: UGE Supplier Device Package: UGE Operating Temperature - Junction: -	封裝: UGE	庫存6,300	8000V	4.2A	6.25V @ 7A	Standard Recovery >500ns, > 200mA (Io)	-	1mA @ 8000V	-	Chassis Mount	UGE	UGE	-
DPG60I300HA	IXYS	DIODE GEN PURP 300V 60A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 1µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-247-2	庫存19,008	300V	60A	1.4V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 300V	-	Through Hole	TO-247-2	TO-247	-55°C ~ 175°C
DSEP6-06AS	IXYS	DIODE GEN PURP 600V 6A TO252AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 2.02V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -40°C ~ 175°C	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存60,000	600V	6A	2.02V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252AA	-40°C ~ 175°C
DNA30E2200PZ	IXYS	DIODE RECT 2200V 30A D2PAK-HV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 2200V Capacitance @ Vr, F: 7pF @ 700V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存14,916	2200V	30A	1.26V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	40µA @ 2200V	7pF @ 700V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-55°C ~ 150°C
DSAI75-16B	IXYS	DIODE AVALANCHE 1.6KV 110A DO203 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 110A Voltage - Forward (Vf) (Max) @ If: 1.17V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 6mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 180°C	封裝: DO-203AB, DO-5, Stud	庫存17,424	1600V	110A	1.17V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	6mA @ 1600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 180°C
DSDI60-16A	IXYS	DIODE GEN PURP 1.6KV 63A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 63A Voltage - Forward (Vf) (Max) @ If: 4.1V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 2mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -40°C ~ 150°C	封裝: TO-247-2	庫存8,076	1600V	63A	4.1V @ 70A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	2mA @ 1600V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
DSEP60-12AR	IXYS	DIODE GEN 1.2KV 60A ISOPLUS247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 2.66V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 650µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247? Operating Temperature - Junction: -55°C ~ 175°C	封裝: ISOPLUS247?	庫存6,640	1200V	60A	2.66V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	650µA @ 1200V	-	Through Hole	ISOPLUS247?	ISOPLUS247?	-55°C ~ 175°C
DSEP60-06A	IXYS	DIODE GEN PURP 600V 60A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 650µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-247-2	庫存5,488	600V	60A	2.04V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	650µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
DSEP15-12CR	IXYS	DIODE GEN 1.2KV 15A ISOPLUS247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 4.04V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247? Operating Temperature - Junction: -55°C ~ 175°C	封裝: ISOPLUS247?	庫存7,380	1200V	15A	4.04V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	100µA @ 1200V	-	Through Hole	ISOPLUS247?	ISOPLUS247?	-55°C ~ 175°C
DSEP30-12AR	IXYS	DIODE GEN 1.2KV 30A ISOPLUS247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.74V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247? Operating Temperature - Junction: -55°C ~ 175°C	封裝: ISOPLUS247?	庫存3,456	1200V	30A	2.74V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	250µA @ 1200V	-	Through Hole	ISOPLUS247?	ISOPLUS247?	-55°C ~ 175°C
DSEP30-06A	IXYS	DIODE GEN PURP 600V 30A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 250µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-247-2	庫存48,288	600V	30A	1.6V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	250µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
UGE3126AY4	IXYS	DIODE MODULE 24KV 2A UGE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 24000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 18V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 24000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: UGE Supplier Device Package: UGE Operating Temperature - Junction: -	封裝: UGE	庫存6,288	24000V	2A	18V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	1mA @ 24000V	-	Chassis Mount	UGE	UGE	-

DSEP12-12B

IXYS

DIODE GEN PURP 1.2KV 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 3.25V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-220-2

庫存5,632

1200V

15A

3.25V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

100µA @ 1200V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

DSI30-16A

IXYS

DIODE GEN PURP 1.6KV 30A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40µA @ 1600V
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C

封裝: TO-220-2

庫存5,776

1600V

30A

1.29V @ 30A

Standard Recovery >500ns, > 200mA (Io)

-

40µA @ 1600V

10pF @ 400V, 1MHz

Through Hole

TO-220-2

TO-220AC

-40°C ~ 175°C

DHG10I1200PM

IXYS

DIODE GEN PURP 1.2KV 10A TO220FP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 2.69V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 15µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220FPAC
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-2 Full Pack, Isolated Tab

庫存6,336

1200V

10A

2.69V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

15µA @ 1200V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220FPAC

-55°C ~ 150°C

DSI30-12A

IXYS

DIODE GEN PURP 1.2KV 30A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40µA @ 1200V
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C

封裝: TO-220-2

庫存8,940

1200V

30A

1.29V @ 30A

Standard Recovery >500ns, > 200mA (Io)

-

40µA @ 1200V

10pF @ 400V, 1MHz

Through Hole

TO-220-2

TO-220AC

-40°C ~ 175°C

DSEI12-10A

IXYS

DIODE GEN PURP 1KV 12A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 250µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C

封裝: TO-220-2

庫存9,828

1000V

12A

2.7V @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

250µA @ 1000V

-

Through Hole

TO-220-2

TO-220AC

-40°C ~ 150°C

DSEP8-12A

IXYS

DIODE GEN PURP 1.2KV 10A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 2.94V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 60µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-220-2

庫存50,520

1200V

10A

2.94V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

60µA @ 1200V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

DFE10I600PM

IXYS

DIODE GEN PURP 600V 10A TO220FP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-2 Full Pack, Isolated Tab

庫存7,032

600V

10A

1.5V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

20µA @ 600V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220ACFP

-55°C ~ 150°C

DSEI8-06A

IXYS

DIODE GEN PURP 600V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C

封裝: TO-220-2

庫存156,948

600V

8A

1.5V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

20µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-40°C ~ 150°C

MDO500-12N1

IXYS

DIODE MODULE 1.2KV 560A Y1-CU

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 560A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30mA @ 1200V
Capacitance @ Vr, F: 762pF @ 400V, 1MHz
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Supplier Device Package: Y1-CU
Operating Temperature - Junction: -

封裝: Y1-CU

庫存5,696

1200V

560A

1.3V @ 1200A

Standard Recovery >500ns, > 200mA (Io)

-

30mA @ 1200V

762pF @ 400V, 1MHz

Chassis Mount

Y1-CU

-

DSA17-16A

IXYS

DIODE AVALANCHE 1.6KV 25A DO203

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -40°C ~ 180°C

封裝: DO-203AA, DO-4, Stud

庫存5,664

1600V

25A

1.36V @ 55A

Standard Recovery >500ns, > 200mA (Io)

-

4mA @ 1600V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-40°C ~ 180°C

DSEP60-12A

IXYS

DIODE GEN PURP 1.2KV 60A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 2.66V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 650µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-247-2

庫存7,536

1200V

60A

2.66V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

650µA @ 1200V

-

Through Hole

TO-247-2

TO-247AD

-55°C ~ 175°C

DSEP12-12A

IXYS

DIODE GEN PURP 1.2KV 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.75V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-220-2

庫存46,500

1200V

15A

2.75V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

100µA @ 1200V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

DSI30-08A

IXYS

DIODE GEN PURP 800V 30A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40µA @ 800V
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C

封裝: TO-220-2

庫存6,288

800V

30A

1.29V @ 30A

Standard Recovery >500ns, > 200mA (Io)

-

40µA @ 800V

10pF @ 400V, 1MHz

Through Hole

TO-220-2

TO-220AC

-40°C ~ 175°C

DSEI12-06A

IXYS

DIODE GEN PURP 600V 14A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 14A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C

封裝: TO-220-2

庫存31,704

600V

14A

1.7V @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

50µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-40°C ~ 150°C

MDO500-22N1

IXYS

DIODE MODULE 2.2KV 560A Y1-CU

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200V
Current - Average Rectified (Io): 560A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30mA @ 2200V
Capacitance @ Vr, F: 576pF @ 700V, 1MHz
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Supplier Device Package: Y1-CU
Operating Temperature - Junction: -

封裝: Y1-CU

庫存5,072

2200V

560A

1.3V @ 1200A

Standard Recovery >500ns, > 200mA (Io)

-

30mA @ 2200V

576pF @ 700V, 1MHz

Chassis Mount

Y1-CU

-

MEO550-02DA

IXYS

DIODE MODULE 200V 582A Y4-M6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 582A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 520A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C

封裝: Y4-M6

庫存5,424

200V

582A

1.25V @ 520A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

5mA @ 200V

-

Chassis Mount

Y4-M6

-40°C ~ 150°C

UGE1112AY4

IXYS

DIODE MODULE 8KV 4.2A UGE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 8000V
Current - Average Rectified (Io): 4.2A
Voltage - Forward (Vf) (Max) @ If: 6.25V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 8000V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: UGE
Supplier Device Package: UGE
Operating Temperature - Junction: -

封裝: UGE

庫存6,300

8000V

4.2A

6.25V @ 7A

Standard Recovery >500ns, > 200mA (Io)

-

1mA @ 8000V

-

Chassis Mount

UGE

-

DPG60I300HA

IXYS

DIODE GEN PURP 300V 60A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-247-2

庫存19,008

300V

60A

1.4V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

1µA @ 300V

-

Through Hole

TO-247-2

TO-247

-55°C ~ 175°C

DSEP6-06AS

IXYS

DIODE GEN PURP 600V 6A TO252AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 2.02V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -40°C ~ 175°C

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存60,000

600V

6A

2.02V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

20ns

50µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252AA

-40°C ~ 175°C

DNA30E2200PZ

IXYS

DIODE RECT 2200V 30A D2PAK-HV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40µA @ 2200V
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存14,916

2200V

30A

1.26V @ 30A

Standard Recovery >500ns, > 200mA (Io)

-

40µA @ 2200V

7pF @ 700V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263 (D2Pak)

-55°C ~ 150°C

DSAI75-16B

IXYS

DIODE AVALANCHE 1.6KV 110A DO203

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 110A
Voltage - Forward (Vf) (Max) @ If: 1.17V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 6mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 180°C

封裝: DO-203AB, DO-5, Stud

庫存17,424

1600V

110A

1.17V @ 150A

Standard Recovery >500ns, > 200mA (Io)

-

6mA @ 1600V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-40°C ~ 180°C

DSDI60-16A

IXYS

DIODE GEN PURP 1.6KV 63A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 63A
Voltage - Forward (Vf) (Max) @ If: 4.1V @ 70A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 2mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C

封裝: TO-247-2

庫存8,076

1600V

63A

4.1V @ 70A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

2mA @ 1600V

-

Through Hole

TO-247-2

TO-247AD

-40°C ~ 150°C

DSEP60-12AR

IXYS

DIODE GEN 1.2KV 60A ISOPLUS247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 2.66V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 650µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?
Operating Temperature - Junction: -55°C ~ 175°C

封裝: ISOPLUS247?

庫存6,640

1200V

60A

2.66V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

650µA @ 1200V

-

Through Hole

ISOPLUS247?

-55°C ~ 175°C

DSEP60-06A

IXYS

DIODE GEN PURP 600V 60A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 650µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-247-2

庫存5,488

600V

60A

2.04V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

650µA @ 600V

-

Through Hole

TO-247-2

TO-247AD

-55°C ~ 175°C

DSEP15-12CR

IXYS

DIODE GEN 1.2KV 15A ISOPLUS247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 4.04V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?
Operating Temperature - Junction: -55°C ~ 175°C

封裝: ISOPLUS247?

庫存7,380

1200V

15A

4.04V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

20ns

100µA @ 1200V

-

Through Hole

ISOPLUS247?

-55°C ~ 175°C

DSEP30-12AR

IXYS

DIODE GEN 1.2KV 30A ISOPLUS247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.74V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?
Operating Temperature - Junction: -55°C ~ 175°C

封裝: ISOPLUS247?

庫存3,456

1200V

30A

2.74V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

250µA @ 1200V

-

Through Hole

ISOPLUS247?

-55°C ~ 175°C

DSEP30-06A

IXYS

DIODE GEN PURP 600V 30A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 250µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-247-2

庫存48,288

600V

30A

1.6V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

250µA @ 600V

-

Through Hole

TO-247-2

TO-247AD

-55°C ~ 175°C

UGE3126AY4

IXYS

DIODE MODULE 24KV 2A UGE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 24000V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 18V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 24000V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: UGE
Supplier Device Package: UGE
Operating Temperature - Junction: -

封裝: UGE

庫存6,288

24000V

2A

18V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

1mA @ 24000V

-

Chassis Mount

UGE

-