頁 6 - IXYS 產品 - 二極體 - 整流器 - 單 | 黑森爾電子
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IXYS 產品 - 二極體 - 整流器 - 單

記錄 504
頁  6/18
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零件編號
製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
M0437WC080
IXYS

DIODE GEN PURP 80V 437A W1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 437A
  • Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 635 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 80 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W1
  • Operating Temperature - Junction: -40°C ~ 125°C
封裝: -
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80 V
437A
1.47 V @ 635 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 80 V
-
Clamp On
DO-200AB, A-PUK
W1
-40°C ~ 125°C
DCG17P1200HR
IXYS

DIODE SCHOTTKY 1.2KV 18A ISO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 18A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
  • Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
Request a Quote
1200 V
18A
1.8 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 1200 V
1500pF @ 0V, 1MHz
Through Hole
TO-247-3
ISO247
-40°C ~ 150°C
DSEI12-06AS-TRL
IXYS

DIODE GEN PURP 600V 14A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 14A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
Request a Quote
600 V
14A
1.7 V @ 16 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
50 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-40°C ~ 150°C
DSEI12-06AS-TUB
IXYS

DIODE GEN PURP 600V 14A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 14A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
庫存177
600 V
14A
1.7 V @ 16 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
50 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-40°C ~ 150°C
W1856NC460
IXYS

DIODE GEN PURP 4.6KV 1856A W5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4600 V
  • Current - Average Rectified (Io): 1856A
  • Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 5550 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 36 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 4600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W5
  • Operating Temperature - Junction: -40°C ~ 160°C
封裝: -
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4600 V
1856A
2.95 V @ 5550 A
Standard Recovery >500ns, > 200mA (Io)
36 µs
50 mA @ 4600 V
-
Clamp On
DO-200AC, K-PUK
W5
-40°C ~ 160°C
W1856NC480
IXYS

DIODE GEN PURP 4.8KV 1856A W5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4800 V
  • Current - Average Rectified (Io): 1856A
  • Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 5550 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 36 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 4800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W5
  • Operating Temperature - Junction: -40°C ~ 160°C
封裝: -
Request a Quote
4800 V
1856A
2.95 V @ 5550 A
Standard Recovery >500ns, > 200mA (Io)
36 µs
50 mA @ 4800 V
-
Clamp On
DO-200AC, K-PUK
W5
-40°C ~ 160°C
M0914LC200
IXYS

DIODE GEN PURP 2KV 914A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 914A
  • Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 3770 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3.2 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 2000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
Request a Quote
2000 V
914A
4.1 V @ 3770 A
Standard Recovery >500ns, > 200mA (Io)
3.2 µs
50 mA @ 2000 V
-
Clamp On
DO-200AB, B-PUK
W4
-40°C ~ 150°C
M0358WC180
IXYS

DIODE GEN PURP 1.8KV 358A W1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 358A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 750 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.4 µs
  • Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W1
  • Operating Temperature - Junction: -40°C ~ 125°C
封裝: -
Request a Quote
1800 V
358A
2.1 V @ 750 A
Standard Recovery >500ns, > 200mA (Io)
1.4 µs
20 mA @ 1800 V
-
Clamp On
DO-200AB, A-PUK
W1
-40°C ~ 125°C
M0358WC120
IXYS

DIODE GEN PURP 1.2KV 358A W1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 358A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 750 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.4 µs
  • Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W1
  • Operating Temperature - Junction: -40°C ~ 125°C
封裝: -
Request a Quote
1200 V
358A
2.1 V @ 750 A
Standard Recovery >500ns, > 200mA (Io)
1.4 µs
20 mA @ 1200 V
-
Clamp On
DO-200AB, A-PUK
W1
-40°C ~ 125°C
M2505MC200
IXYS

DIODE GEN PURP 2KV 2505A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 2505A
  • Voltage - Forward (Vf) (Max) @ If: 991 mV @ 2000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 7.6 µs
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
2000 V
2505A
991 mV @ 2000 A
Standard Recovery >500ns, > 200mA (Io)
7.6 µs
-
-
Clamp On
DO-200AC, K-PUK
W54
-
M2505MC250
IXYS

DIODE GEN PURP 2.5KV 2505A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2500 V
  • Current - Average Rectified (Io): 2505A
  • Voltage - Forward (Vf) (Max) @ If: 991 mV @ 2000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 7.6 µs
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
2500 V
2505A
991 mV @ 2000 A
Standard Recovery >500ns, > 200mA (Io)
7.6 µs
-
-
Clamp On
DO-200AC, K-PUK
W54
-
W2865HA680
IXYS

DIODE GEN PURP 6.8KV 4825A W121

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6800 V
  • Current - Average Rectified (Io): 4825A
  • Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 53 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: W121
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
Request a Quote
6800 V
4825A
4.04 V @ 10000 A
Standard Recovery >500ns, > 200mA (Io)
53 µs
100 mA @ 6800 V
-
Chassis Mount
DO-200AD
W121
-40°C ~ 150°C
W2865HA720
IXYS

DIODE GEN PURP 7200V 4825A W121

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 7200 V
  • Current - Average Rectified (Io): 4825A
  • Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 53 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 7200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: W121
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
Request a Quote
7200 V
4825A
4.04 V @ 10000 A
Standard Recovery >500ns, > 200mA (Io)
53 µs
100 mA @ 7200 V
-
Chassis Mount
DO-200AD
W121
-40°C ~ 150°C
DHG30IM600PC-TUB
IXYS

DIODE GEN PURP 600V 30A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: 16pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
600 V
30A
2.26 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
50 µA @ 600 V
16pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-55°C ~ 150°C
DHG30IM600PC-TRL
IXYS

DIODE GEN PURP 600V 30A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.37 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
600 V
30A
2.37 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
50 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-55°C ~ 150°C
DSS6-0045AS-TRL
IXYS

DIODE SCHOTTKY 45V 6A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
45 V
6A
630 mV @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 45 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DSS6-0045AS-TUB
IXYS

DIODE SCHOTTKY 45V 6A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 45 V
  • Capacitance @ Vr, F: 497pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
45 V
6A
630 mV @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 45 V
497pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DPG30P400PJ
IXYS

DIODE GP 400V 30A ISOPLUS220

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 46pF @ 200V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS220™
  • Supplier Device Package: ISOPLUS220™
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
400 V
30A
1.35 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
1 µA @ 400 V
46pF @ 200V, 1MHz
Through Hole
ISOPLUS220™
ISOPLUS220™
-55°C ~ 175°C
E1780TG65E
IXYS

DIODE GEN PURP 3.6KV 1780A -

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3600 V
  • Current - Average Rectified (Io): 1780A
  • Voltage - Forward (Vf) (Max) @ If: 3.83 V @ 1780 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.22 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: TO-200AF
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 140°C
封裝: -
Request a Quote
3600 V
1780A
3.83 V @ 1780 A
Standard Recovery >500ns, > 200mA (Io)
1.22 µs
100 mA @ 3600 V
-
Chassis Mount
TO-200AF
-
-40°C ~ 140°C
W1730JK280
IXYS

DIODE GEN PURP 2.8KV 1730A W113

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2800 V
  • Current - Average Rectified (Io): 1730A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 2800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W113
  • Operating Temperature - Junction: -40°C ~ 160°C
封裝: -
Request a Quote
2800 V
1730A
1.2 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 2800 V
-
Clamp On
DO-200AB, B-PUK
W113
-40°C ~ 160°C
W1730JK240
IXYS

DIODE GEN PURP 2.4KV 1730A W113

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400 V
  • Current - Average Rectified (Io): 1730A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 2400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W113
  • Operating Temperature - Junction: -40°C ~ 160°C
封裝: -
Request a Quote
2400 V
1730A
1.2 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 2400 V
-
Clamp On
DO-200AB, B-PUK
W113
-40°C ~ 160°C
DSEI25-06AS-TRL
IXYS

DIODE GEN PURP 600V 25A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 25 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: 20pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
Request a Quote
600 V
25A
1.31 V @ 25 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
100 µA @ 600 V
20pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-40°C ~ 150°C
DSEI25-06AS-TUB
IXYS

DIODE GEN PURP 600V 25A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 25 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: 20pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
Request a Quote
600 V
25A
1.31 V @ 25 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
100 µA @ 600 V
20pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-40°C ~ 150°C
DLA20IM800PC-TRL
IXYS

DIODE GEN PURP 800V 20A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
800 V
20A
1.2 V @ 20 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 800 V
4pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-55°C ~ 175°C
DSI30-12AS-TRL
IXYS

DIODE GEN PURP 1.2KV 30A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
  • Capacitance @ Vr, F: 10pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
庫存22,089
1200 V
30A
1.29 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1200 V
10pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-40°C ~ 175°C
DSEI19-06AS-TRL
IXYS

DIODE GEN PURP 600V 20A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
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600 V
20A
1.7 V @ 16 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
50 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-40°C ~ 150°C
W3842MC240
IXYS

DIODE GEN PURP 2.4KV 3842A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400 V
  • Current - Average Rectified (Io): 3842A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 34 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 2400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -40°C ~ 160°C
封裝: -
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2400 V
3842A
1.2 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
34 µs
50 mA @ 2400 V
-
Clamp On
DO-200AC, K-PUK
W54
-40°C ~ 160°C
W3842MC280
IXYS

DIODE GEN PURP 2.8KV 3842A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2800 V
  • Current - Average Rectified (Io): 3842A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 34 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 2800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -40°C ~ 160°C
封裝: -
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2800 V
3842A
1.2 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
34 µs
50 mA @ 2800 V
-
Clamp On
DO-200AC, K-PUK
W54
-40°C ~ 160°C