頁 3 - Microchip Technology 產品 - 電晶體 - FET、MOSFET - 陣列

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MSCSM120AM02CT6LIAG	Microchip Technology	SIC 2N-CH 1200V 947A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 947A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V Vgs(th) (Max) @ Id: 2.8V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V Power - Max: 3.75kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	封裝: -	Request a Quote	-	1200V (1.2kV)	947A (Tc)	2.6mOhm @ 480A, 20V	2.8V @ 12mA	2784nC @ 20V	36240pF @ 1000V	3.75kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C LI
MSCSM170DUM11T3AG	Microchip Technology	SIC 2N-CH 1700V 240A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 3.2V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V Power - Max: 1140W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	封裝: -	Request a Quote	-	1700V (1.7kV)	240A (Tc)	11.3mOhm @ 120A, 20V	3.2V @ 10mA	712nC @ 20V	13200pF @ 1000V	1140W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM70DUM017AG	Microchip Technology	SIC 2N-CH 700V 1021A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 1021A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 360A, 20V Vgs(th) (Max) @ Id: 2.4V @ 36mA Gate Charge (Qg) (Max) @ Vgs: 1935nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 40500pF @ 700V Power - Max: 2750W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	Request a Quote	-	700V	1021A (Tc)	2.1mOhm @ 360A, 20V	2.4V @ 36mA	1935nC @ 20V	40500pF @ 700V	2750W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM170HRM075NG	Microchip Technology	SIC 4N-CH 1700V/1200V 337A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc), 317A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V Vgs(th) (Max) @ Id: 3.2V @ 15mA, 2.8V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V, 928nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V, 12100pF @ 1000V Power - Max: 1.492kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	Request a Quote	-	1700V (1.7kV), 1200V (1.2kV)	337A (Tc), 317A (Tc)	7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V	3.2V @ 15mA, 2.8V @ 12mA	1068nC @ 20V, 928nC @ 20V	19800pF @ 1000V, 12100pF @ 1000V	1.492kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120TAM31T3AG	Microchip Technology	SIC 6N-CH 1200V 89A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	Request a Quote	-	1200V (1.2kV)	89A (Tc)	31mOhm @ 40A, 20V	2.8V @ 3mA	232nC @ 20V	3020pF @ 1000V	395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120X10CTYZBNMG	Microchip Technology	PM-MOSFET-SIC-SBD-6HPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 28A (Tc), 49A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V, 50mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA, 2.7V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 20V, 137nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 838pF @ 1000V, 1990pF @ 1000V Power - Max: 116W (Tc), 196W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	Request a Quote	-	1200V (1.2kV)	28A (Tc), 49A (Tc)	100mOhm @ 15A, 20V, 50mOhm @ 40A, 20V	2.8V @ 1mA, 2.7V @ 2mA	64nC @ 20V, 137nC @ 20V	838pF @ 1000V, 1990pF @ 1000V	116W (Tc), 196W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120AM03CT6LIAG	Microchip Technology	SIC 2N-CH 1200V 805A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 805A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V Vgs(th) (Max) @ Id: 2.8V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1kV Power - Max: 3.215kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	封裝: -	庫存6	-	1200V (1.2kV)	805A (Tc)	3.1mOhm @ 400A, 20V	2.8V @ 10mA	2320nC @ 20V	30200pF @ 1kV	3.215kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C LI
MSCSM120AM11CT3AG	Microchip Technology	SIC 2N-CH 1200V 254A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 254A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Power - Max: 1.067kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	封裝: -	Request a Quote	-	1200V (1.2kV)	254A (Tc)	10.4mOhm @ 120A, 20V	2.8V @ 3mA	696nC @ 20V	9060pF @ 1000V	1.067kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM70TAM10CTPAG	Microchip Technology	SIC 6N-CH 700V 238A SP6-P FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Power - Max: 674W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6-P	封裝: -	Request a Quote	-	700V	238A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA	430nC @ 20V	9000pF @ 700V	674W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6-P
MSCSM120VR1M062CT6AG	Microchip Technology	SIC 2N-CH 1200V 420A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 420A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 200A, 20V Vgs(th) (Max) @ Id: 2.8V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 1160nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 15100pF @ 1000V Power - Max: 1.753kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	Request a Quote	-	1200V (1.2kV)	420A (Tc)	6.2mOhm @ 200A, 20V	2.8V @ 15mA	1160nC @ 20V	15100pF @ 1000V	1.753kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120TLM50C3AG	Microchip Technology	SIC 4N-CH 1200V 55A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V Power - Max: 245W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	封裝: -	庫存18	-	1200V (1.2kV)	55A (Tc)	50mOhm @ 40A, 20V	2.7V @ 1mA	137nC @ 20V	1990pF @ 1000V	245W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM70AM07T3AG	Microchip Technology	SIC 2N-CH 700V 353A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.4V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Power - Max: 988W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	庫存18	-	700V	353A (Tc)	6.4mOhm @ 120A, 20V	2.4V @ 12mA	645nC @ 20V	13500pF @ 700V	988W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70DUM025AG	Microchip Technology	SIC 2N-CH 700V 689A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 689A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 2.4V @ 24mA Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V Power - Max: 1882W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	Request a Quote	-	700V	689A (Tc)	3.2mOhm @ 240A, 20V	2.4V @ 24mA	1290nC @ 20V	27000pF @ 700V	1882W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120AM042D3AG	Microchip Technology	SIC 2N-CH 1200V 495A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 2.8V @ 18mA Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V Power - Max: 2.031kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	Request a Quote	-	1200V (1.2kV)	495A (Tc)	5.2mOhm @ 240A, 20V	2.8V @ 18mA	1392nC @ 20V	18100pF @ 1000V	2.031kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120TLM16C3AG	Microchip Technology	SIC 4N-CH 1200V 173A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 745W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	封裝: -	Request a Quote	-	1200V (1.2kV)	173A (Tc)	16mOhm @ 80A, 20V	2.8V @ 2mA	464nC @ 20V	6040pF @ 1000V	745W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM120AM50T1AG	Microchip Technology	SIC 2N-CH 1200V 55A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V Power - Max: 245W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	Request a Quote	-	1200V (1.2kV)	55A (Tc)	50mOhm @ 40A, 20V	2.7V @ 1mA	137nC @ 20V	1990pF @ 1000V	245W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
APTMC120TAM34CT3AG	Microchip Technology	SIC 6N-CH 1200V 74A SP3 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 4V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V Power - Max: 375W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3	封裝: -	Request a Quote	-	1200V (1.2kV)	74A (Tc)	34mOhm @ 50A, 20V	4V @ 15mA	161nC @ 5V	2788pF @ 1000V	375W	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3
MSCMC120AM02CT6LIAG	Microchip Technology	SIC 2N-CH 1200V 742A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 742A (Tc) Rds On (Max) @ Id, Vgs: 2.85mOhm @ 600A, 20V Vgs(th) (Max) @ Id: 4V @ 180mA Gate Charge (Qg) (Max) @ Vgs: 1932nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 33500pF @ 1000V Power - Max: 3200W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	封裝: -	Request a Quote	-	1200V (1.2kV)	742A (Tc)	2.85mOhm @ 600A, 20V	4V @ 180mA	1932nC @ 20V	33500pF @ 1000V	3200W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C LI
MSCMC90AM12C3AG	Microchip Technology	SIC 900V 110A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	封裝: -	Request a Quote	-	900V	110A (Tc)	-	-	-	-	-	-	Chassis Mount	Module	SP3F
MSCMC120AM03CT6LIAG	Microchip Technology	SIC 2N-CH 1200V 631A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 631A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 500A, 20V Vgs(th) (Max) @ Id: 4V @ 150mA Gate Charge (Qg) (Max) @ Vgs: 1610nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 27900pF @ 1000V Power - Max: 2778W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	封裝: -	Request a Quote	-	1200V (1.2kV)	631A (Tc)	3.4mOhm @ 500A, 20V	4V @ 150mA	1610nC @ 20V	27900pF @ 1000V	2778W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C LI
MSCSM120AM16T1AG	Microchip Technology	SIC 2N-CH 1200V 173A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 745W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	Request a Quote	-	1200V (1.2kV)	173A (Tc)	16mOhm @ 80A, 20V	2.8V @ 6mA	464nC @ 20V	6040pF @ 1000V	745W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120HM50CT3AG	Microchip Technology	SIC 4N-CH 1200V 55A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V Power - Max: 245W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	封裝: -	Request a Quote	-	1200V (1.2kV)	55A (Tc)	50mOhm @ 40A, 20V	2.7V @ 1mA	137nC @ 20V	1990pF @ 1000V	245W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM70VM19C3AG	Microchip Technology	SIC 2N-CH 700V 124A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Power - Max: 365W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	封裝: -	Request a Quote	-	700V	124A (Tc)	19mOhm @ 40A, 20V	2.4V @ 4mA	215nC @ 20V	4500pF @ 700V	365W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCM20XM10T3XG	Microchip Technology	MOSFET 6N-CH 200V 108A SP3X FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 50V Power - Max: 341W (Tc) Operating Temperature: -40°C ~ 125°C (Tc) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3X	封裝: -	庫存33	-	200V	108A (Tc)	9.7mOhm @ 81A, 10V	5V @ 250µA	161nC @ 10V	10700pF @ 50V	341W (Tc)	-40°C ~ 125°C (Tc)	Chassis Mount	Module	SP3X
MSCSM170TLM23C3AG	Microchip Technology	SIC 4N-CH 1700V 124A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V Power - Max: 602W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	封裝: -	Request a Quote	-	1700V (1.7kV)	124A (Tc)	22.5mOhm @ 60A, 20V	3.2V @ 5mA	356nC @ 20V	6600pF @ 1000V	602W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM70HM038CAG	Microchip Technology	SIC MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM120AM50CT1AG	Microchip Technology	SIC 2N-CH 1200V 55A SP1F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V Power - Max: 245W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP1F	封裝: -	Request a Quote	-	1200V (1.2kV)	55A (Tc)	50mOhm @ 40A, 20V	2.7V @ 1mA	137nC @ 20V	1990pF @ 1000V	245W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP1F
MSCMC120AM04CT6LIAG	Microchip Technology	SIC 2N-CH 1200V 388A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 388A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V Vgs(th) (Max) @ Id: 4V @ 90mA Gate Charge (Qg) (Max) @ Vgs: 966nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 16700pF @ 1000V Power - Max: 1754W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	封裝: -	Request a Quote	-	1200V (1.2kV)	388A (Tc)	5.7mOhm @ 300A, 20V	4V @ 90mA	966nC @ 20V	16700pF @ 1000V	1754W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C LI

MSCSM120AM02CT6LIAG

Microchip Technology

SIC 2N-CH 1200V 947A SP6C LI

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V
Power - Max: 3.75kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C LI

封裝: -

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-

1200V (1.2kV)

947A (Tc)

2.6mOhm @ 480A, 20V

2.8V @ 12mA

2784nC @ 20V

36240pF @ 1000V

3.75kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C LI

MSCSM170DUM11T3AG

Microchip Technology

SIC 2N-CH 1700V 240A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
Power - Max: 1140W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

封裝: -

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-

1700V (1.7kV)

240A (Tc)

11.3mOhm @ 120A, 20V

3.2V @ 10mA

712nC @ 20V

13200pF @ 1000V

1140W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCSM70DUM017AG

Microchip Technology

SIC 2N-CH 700V 1021A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 1021A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 360A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 36mA
Gate Charge (Qg) (Max) @ Vgs: 1935nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 40500pF @ 700V
Power - Max: 2750W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

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-

700V

1021A (Tc)

2.1mOhm @ 360A, 20V

2.4V @ 36mA

1935nC @ 20V

40500pF @ 700V

2750W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM170HRM075NG

Microchip Technology

SIC 4N-CH 1700V/1200V 337A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc), 317A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 15mA, 2.8V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V, 928nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V, 12100pF @ 1000V
Power - Max: 1.492kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

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-

1700V (1.7kV), 1200V (1.2kV)

337A (Tc), 317A (Tc)

7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V

3.2V @ 15mA, 2.8V @ 12mA

1068nC @ 20V, 928nC @ 20V

19800pF @ 1000V, 12100pF @ 1000V

1.492kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120TAM31T3AG

Microchip Technology

SIC 6N-CH 1200V 89A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 395W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

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-

1200V (1.2kV)

89A (Tc)

31mOhm @ 40A, 20V

2.8V @ 3mA

232nC @ 20V

3020pF @ 1000V

395W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120X10CTYZBNMG

Microchip Technology

PM-MOSFET-SIC-SBD-6HPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 28A (Tc), 49A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V, 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA, 2.7V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 20V, 137nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 838pF @ 1000V, 1990pF @ 1000V
Power - Max: 116W (Tc), 196W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

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-

1200V (1.2kV)

28A (Tc), 49A (Tc)

100mOhm @ 15A, 20V, 50mOhm @ 40A, 20V

2.8V @ 1mA, 2.7V @ 2mA

64nC @ 20V, 137nC @ 20V

838pF @ 1000V, 1990pF @ 1000V

116W (Tc), 196W (Tc)

-55°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120AM03CT6LIAG

Microchip Technology

SIC 2N-CH 1200V 805A SP6C LI

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1kV
Power - Max: 3.215kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C LI

封裝: -

庫存6

-

1200V (1.2kV)

805A (Tc)

3.1mOhm @ 400A, 20V

2.8V @ 10mA

2320nC @ 20V

30200pF @ 1kV

3.215kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C LI

MSCSM120AM11CT3AG

Microchip Technology

SIC 2N-CH 1200V 254A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Power - Max: 1.067kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

封裝: -

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-

1200V (1.2kV)

254A (Tc)

10.4mOhm @ 120A, 20V

2.8V @ 3mA

696nC @ 20V

9060pF @ 1000V

1.067kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCSM70TAM10CTPAG

Microchip Technology

SIC 6N-CH 700V 238A SP6-P

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Power - Max: 674W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6-P

封裝: -

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-

700V

238A (Tc)

9.5mOhm @ 80A, 20V

2.4V @ 8mA

430nC @ 20V

9000pF @ 700V

674W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6-P

MSCSM120VR1M062CT6AG

Microchip Technology

SIC 2N-CH 1200V 420A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 200A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 1160nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 15100pF @ 1000V
Power - Max: 1.753kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

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-

1200V (1.2kV)

420A (Tc)

6.2mOhm @ 200A, 20V

2.8V @ 15mA

1160nC @ 20V

15100pF @ 1000V

1.753kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120TLM50C3AG

Microchip Technology

SIC 4N-CH 1200V 55A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Power - Max: 245W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

封裝: -

庫存18

-

1200V (1.2kV)

55A (Tc)

50mOhm @ 40A, 20V

2.7V @ 1mA

137nC @ 20V

1990pF @ 1000V

245W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCSM70AM07T3AG

Microchip Technology

SIC 2N-CH 700V 353A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Power - Max: 988W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

庫存18

-

700V

353A (Tc)

6.4mOhm @ 120A, 20V

2.4V @ 12mA

645nC @ 20V

13500pF @ 700V

988W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM70DUM025AG

Microchip Technology

SIC 2N-CH 700V 689A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Power - Max: 1882W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

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-

700V

689A (Tc)

3.2mOhm @ 240A, 20V

2.4V @ 24mA

1290nC @ 20V

27000pF @ 700V

1882W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120AM042D3AG

Microchip Technology

SIC 2N-CH 1200V 495A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Power - Max: 2.031kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

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-

1200V (1.2kV)

495A (Tc)

5.2mOhm @ 240A, 20V

2.8V @ 18mA

1392nC @ 20V

18100pF @ 1000V

2.031kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120TLM16C3AG

Microchip Technology

SIC 4N-CH 1200V 173A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 745W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

封裝: -

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-

1200V (1.2kV)

173A (Tc)

16mOhm @ 80A, 20V

2.8V @ 2mA

464nC @ 20V

6040pF @ 1000V

745W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCSM120AM50T1AG

Microchip Technology

SIC 2N-CH 1200V 55A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Power - Max: 245W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

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-

1200V (1.2kV)

55A (Tc)

50mOhm @ 40A, 20V

2.7V @ 1mA

137nC @ 20V

1990pF @ 1000V

245W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

APTMC120TAM34CT3AG

Microchip Technology

SIC 6N-CH 1200V 74A SP3

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V
Power - Max: 375W
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3

封裝: -

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-

1200V (1.2kV)

74A (Tc)

34mOhm @ 50A, 20V

4V @ 15mA

161nC @ 5V

2788pF @ 1000V

375W

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3

MSCMC120AM02CT6LIAG

Microchip Technology

SIC 2N-CH 1200V 742A SP6C LI

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 742A (Tc)
Rds On (Max) @ Id, Vgs: 2.85mOhm @ 600A, 20V
Vgs(th) (Max) @ Id: 4V @ 180mA
Gate Charge (Qg) (Max) @ Vgs: 1932nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 33500pF @ 1000V
Power - Max: 3200W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C LI

封裝: -

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-

1200V (1.2kV)

742A (Tc)

2.85mOhm @ 600A, 20V

4V @ 180mA

1932nC @ 20V

33500pF @ 1000V

3200W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C LI

MSCMC90AM12C3AG

Microchip Technology

SIC 900V 110A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

封裝: -

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-

900V

110A (Tc)

-

Chassis Mount

Module

SP3F

MSCMC120AM03CT6LIAG

Microchip Technology

SIC 2N-CH 1200V 631A SP6C LI

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 631A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 500A, 20V
Vgs(th) (Max) @ Id: 4V @ 150mA
Gate Charge (Qg) (Max) @ Vgs: 1610nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 27900pF @ 1000V
Power - Max: 2778W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C LI

封裝: -

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-

1200V (1.2kV)

631A (Tc)

3.4mOhm @ 500A, 20V

4V @ 150mA

1610nC @ 20V

27900pF @ 1000V

2778W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C LI

MSCSM120AM16T1AG

Microchip Technology

SIC 2N-CH 1200V 173A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 745W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

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1200V (1.2kV)

173A (Tc)

16mOhm @ 80A, 20V

2.8V @ 6mA

464nC @ 20V

6040pF @ 1000V

745W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120HM50CT3AG

Microchip Technology

SIC 4N-CH 1200V 55A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Power - Max: 245W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

封裝: -

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1200V (1.2kV)

55A (Tc)

50mOhm @ 40A, 20V

2.7V @ 1mA

137nC @ 20V

1990pF @ 1000V

245W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCSM70VM19C3AG

Microchip Technology

SIC 2N-CH 700V 124A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Power - Max: 365W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

封裝: -

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700V

124A (Tc)

19mOhm @ 40A, 20V

2.4V @ 4mA

215nC @ 20V

4500pF @ 700V

365W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCM20XM10T3XG

Microchip Technology

MOSFET 6N-CH 200V 108A SP3X

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 50V
Power - Max: 341W (Tc)
Operating Temperature: -40°C ~ 125°C (Tc)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3X

封裝: -

庫存33

-

200V

108A (Tc)

9.7mOhm @ 81A, 10V

5V @ 250µA

161nC @ 10V

10700pF @ 50V

341W (Tc)

-40°C ~ 125°C (Tc)

Chassis Mount

Module

SP3X

MSCSM170TLM23C3AG

Microchip Technology

SIC 4N-CH 1700V 124A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
Power - Max: 602W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

封裝: -

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1700V (1.7kV)

124A (Tc)

22.5mOhm @ 60A, 20V

3.2V @ 5mA

356nC @ 20V

6600pF @ 1000V

602W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCSM70HM038CAG

Microchip Technology

SIC MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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MSCSM120AM50CT1AG

Microchip Technology

SIC 2N-CH 1200V 55A SP1F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Power - Max: 245W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP1F

封裝: -

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1200V (1.2kV)

55A (Tc)

50mOhm @ 40A, 20V

2.7V @ 1mA

137nC @ 20V

1990pF @ 1000V

245W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP1F

MSCMC120AM04CT6LIAG

Microchip Technology

SIC 2N-CH 1200V 388A SP6C LI

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 388A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V
Vgs(th) (Max) @ Id: 4V @ 90mA
Gate Charge (Qg) (Max) @ Vgs: 966nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 16700pF @ 1000V
Power - Max: 1754W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C LI

封裝: -

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1200V (1.2kV)

388A (Tc)

5.7mOhm @ 300A, 20V

4V @ 90mA

966nC @ 20V

16700pF @ 1000V

1754W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C LI