頁 8 - Rohm Semiconductor 產品 - 電晶體 - 雙極 (BJT) - 單、預偏壓

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
DTC113ZU3T106	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A UMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 1 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	封裝: -	庫存14,325	100 mA	50 V	1 kOhms	10 kOhms	33 @ 5mA, 5V	300mV @ 500µA, 10mA	-	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3
DTC115EU3T106	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A UMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 100 kOhms Resistor - Emitter Base (R2) (Ohms): 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	封裝: -	庫存3	100 mA	50 V	100 kOhms	100 kOhms	82 @ 5mA, 5V	300mV @ 250µA, 5mA	-	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3
DTA115EUBTL	Rohm Semiconductor	TRANS PREBIAS PNP 50V UMT3F Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 100 kOhms Resistor - Emitter Base (R2) (Ohms): 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: UMT3F	封裝: -	庫存8,700	100 mA	50 V	100 kOhms	100 kOhms	82 @ 5mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	200 mW	Surface Mount	SC-85	UMT3F
DTA144TU3T106	Rohm Semiconductor	PNP, SOT-323, R1 ALONE TYPE Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	封裝: -	Request a Quote	100 mA	50 V	47 kOhms	-	100 @ 1mA, 5V	300mV @ 500µA, 5mA	500nA (ICBO)	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3
DTB123ECHZGT116	Rohm Semiconductor	TRANS PREBIAS PNP 0.5A SST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): - Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	封裝: -	庫存8,025	500 mA	-	2.2 kOhms	2.2 kOhms	39 @ 50mA, 5V	300mV @ 2.5mA, 50mA	-	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
DTA123EU3HZGT106	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A UMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	封裝: -	庫存7,410	100 mA	50 V	2.2 kOhms	2.2 kOhms	20 @ 20mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3
DTC114EE3HZGTL	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A EMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	封裝: -	庫存7,293	100 mA	50 V	10 kOhms	10 kOhms	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
DTB513ZE3TL	Rohm Semiconductor	TRANS PREBIAS PNP 12V 0.5A EMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Resistor - Base (R1) (Ohms): 1 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	封裝: -	庫存8,670	500 mA	12 V	1 kOhms	10 kOhms	140 @ 100mA, 2V	300mV @ 5mA, 100mA	500nA	260 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
DTC114TE3TL	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A EMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	封裝: -	庫存9,000	100 mA	50 V	4.7 kOhms	-	100 @ 1mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
DTC113ZEBTL	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A EMT3F Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 1 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: EMT3F (SOT-416FL)	封裝: -	庫存36	100 mA	50 V	1 kOhms	10 kOhms	33 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	150 mW	Surface Mount	SC-89, SOT-490	EMT3F (SOT-416FL)
DTC113ZE3TL	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A EMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	封裝: -	庫存8,985	100 mA	50 V	4.7 kOhms	4.7 kOhms	30 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA (ICBO)	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
DTA123JEBHZGTL	Rohm Semiconductor	TRANS PREBIAS PNP 0.1A EMT3F Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: EMT3F (SOT-416FL)	封裝: -	庫存5,550	100 mA	-	2.2 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	-	250 MHz	150 mW	Surface Mount	SC-89, SOT-490	EMT3F (SOT-416FL)
DTC124EU3HZGT106	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A UMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	封裝: -	Request a Quote	100 mA	50 V	22 kOhms	22 kOhms	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3
DTC143ECAHZGT116	Rohm Semiconductor	TRANS PREBIAS NPN 0.1A SST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 350 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	封裝: -	庫存18	100 mA	-	4.7 kOhms	4.7 kOhms	30 @ 10mA, 5V	300mV @ 500µA, 10mA	-	250 MHz	350 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
DTA143ZMFHAT2L	Rohm Semiconductor	TRANS PREBIAS PNP 0.1A VMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	封裝: -	Request a Quote	100 mA	-	4.7 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	-	250 MHz	150 mW	Surface Mount	SOT-723	VMT3
DTC115EE3TL	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A EMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 100 kOhms Resistor - Emitter Base (R2) (Ohms): 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	封裝: -	庫存9,000	100 mA	50 V	100 kOhms	100 kOhms	33 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA (ICBO)	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
DTD523YE3TL	Rohm Semiconductor	TRANS PREBIAS NPN 12V 0.5A EMT3 Transistor Type: NPN - Pre-Biased + Diode Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	封裝: -	庫存9,000	500 mA	12 V	2.2 kOhms	10 kOhms	140 @ 100mA, 2V	300mV @ 5mA, 100mA	500nA	260 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
DTC143XMFHAT2L	Rohm Semiconductor	TRANS PREBIAS NPN 0.1A VMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	封裝: -	庫存6,495	100 mA	-	4.7 kOhms	10 kOhms	30 @ 10mA, 5V	300mV @ 500µA, 10mA	-	250 MHz	150 mW	Surface Mount	SOT-723	VMT3
DTA123ECAHZGT116	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A SST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	封裝: -	庫存9,000	100 mA	50 V	2.2 kOhms	2.2 kOhms	20 @ 20mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
DTA114TMFHAT2L	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A VMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	封裝: -	Request a Quote	100 mA	50 V	10 kOhms	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	500nA (ICBO)	250 MHz	150 mW	Surface Mount	SOT-723	VMT3
DTA144WCAT116	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A SST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	封裝: -	庫存7,194	100 mA	50 V	47 kOhms	22 kOhms	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
DTA123EE3HZGTL	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A EMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	封裝: -	庫存9,000	100 mA	50 V	2.2 kOhms	2.2 kOhms	20 @ 20mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
DTC123JU3T106	Rohm Semiconductor	TRANS PREBIAS NPN 0.1A UMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	封裝: -	庫存25,461	100 mA	-	2.2 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	-	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3
DTA115EE3HZGTL	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A EMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 100 kOhms Resistor - Emitter Base (R2) (Ohms): 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	封裝: -	庫存9,000	100 mA	50 V	100 kOhms	100 kOhms	82 @ 5mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
DTB123EKFRAT146	Rohm Semiconductor	TRANS PREBIAS PNP 0.5A SMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): - Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	封裝: -	庫存5,733	500 mA	-	2.2 kOhms	2.2 kOhms	39 @ 50mA, 5V	300mV @ 2.5mA, 50mA	-	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
DTA114TU3HZGT106	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A UMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	封裝: -	庫存5,853	100 mA	50 V	10 kOhms	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	500nA (ICBO)	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3
DTD113ECHZGT116	Rohm Semiconductor	TRANS PREBIAS NPN 0.5A SST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 1 kOhms Resistor - Emitter Base (R2) (Ohms): 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): - Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	封裝: -	庫存8,955	500 mA	-	1 kOhms	1 kOhms	33 @ 50mA, 5V	300mV @ 2.5mA, 50mA	-	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
DTC124ECAHZGT116	Rohm Semiconductor	TRANS PREBIAS NPN 0.1A SST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 350 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	封裝: -	庫存3,906	100 mA	-	22 kOhms	22 kOhms	56 @ 5mA, 5V	300mV @ 500µA, 10mA	-	250 MHz	350 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3

DTC113ZU3T106

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A UMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 1 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

封裝: -

庫存14,325

100 mA

50 V

1 kOhms

10 kOhms

33 @ 5mA, 5V

300mV @ 500µA, 10mA

-

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

UMT3

DTC115EU3T106

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A UMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 100 kOhms
Resistor - Emitter Base (R2) (Ohms): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

封裝: -

庫存3

100 mA

50 V

100 kOhms

82 @ 5mA, 5V

300mV @ 250µA, 5mA

-

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

UMT3

DTA115EUBTL

Rohm Semiconductor

TRANS PREBIAS PNP 50V UMT3F

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 100 kOhms
Resistor - Emitter Base (R2) (Ohms): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: UMT3F

封裝: -

庫存8,700

100 mA

50 V

100 kOhms

82 @ 5mA, 5V

300mV @ 250µA, 5mA

500nA

250 MHz

200 mW

Surface Mount

SC-85

UMT3F

DTA144TU3T106

Rohm Semiconductor

PNP, SOT-323, R1 ALONE TYPE

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

封裝: -

Request a Quote

100 mA

50 V

47 kOhms

-

100 @ 1mA, 5V

300mV @ 500µA, 5mA

500nA (ICBO)

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

UMT3

DTB123ECHZGT116

Rohm Semiconductor

TRANS PREBIAS PNP 0.5A SST3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

封裝: -

庫存8,025

500 mA

-

2.2 kOhms

39 @ 50mA, 5V

300mV @ 2.5mA, 50mA

-

200 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

DTA123EU3HZGT106

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A UMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

封裝: -

庫存7,410

100 mA

50 V

2.2 kOhms

20 @ 20mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

UMT3

DTC114EE3HZGTL

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A EMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

封裝: -

庫存7,293

100 mA

50 V

10 kOhms

30 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3

DTB513ZE3TL

Rohm Semiconductor

TRANS PREBIAS PNP 12V 0.5A EMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Resistor - Base (R1) (Ohms): 1 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

封裝: -

庫存8,670

500 mA

12 V

1 kOhms

10 kOhms

140 @ 100mA, 2V

300mV @ 5mA, 100mA

500nA

260 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3

DTC114TE3TL

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A EMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

封裝: -

庫存9,000

100 mA

50 V

4.7 kOhms

-

100 @ 1mA, 5V

300mV @ 250µA, 5mA

500nA (ICBO)

250 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3

DTC113ZEBTL

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A EMT3F

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 1 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)

封裝: -

庫存36

100 mA

50 V

1 kOhms

10 kOhms

33 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

150 mW

Surface Mount

SC-89, SOT-490

EMT3F (SOT-416FL)

DTC113ZE3TL

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A EMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

封裝: -

庫存8,985

100 mA

50 V

4.7 kOhms

30 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA (ICBO)

250 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3

DTA123JEBHZGTL

Rohm Semiconductor

TRANS PREBIAS PNP 0.1A EMT3F

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)

封裝: -

庫存5,550

100 mA

-

2.2 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

-

250 MHz

150 mW

Surface Mount

SC-89, SOT-490

EMT3F (SOT-416FL)

DTC124EU3HZGT106

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A UMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

封裝: -

Request a Quote

100 mA

50 V

22 kOhms

56 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

UMT3

DTC143ECAHZGT116

Rohm Semiconductor

TRANS PREBIAS NPN 0.1A SST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250 MHz
Power - Max: 350 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

封裝: -

庫存18

100 mA

-

4.7 kOhms

30 @ 10mA, 5V

300mV @ 500µA, 10mA

-

250 MHz

350 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

DTA143ZMFHAT2L

Rohm Semiconductor

TRANS PREBIAS PNP 0.1A VMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

封裝: -

Request a Quote

100 mA

-

4.7 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

-

250 MHz

150 mW

Surface Mount

SOT-723

VMT3

DTC115EE3TL

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A EMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 100 kOhms
Resistor - Emitter Base (R2) (Ohms): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

封裝: -

庫存9,000

100 mA

50 V

100 kOhms

33 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA (ICBO)

250 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3

DTD523YE3TL

Rohm Semiconductor

TRANS PREBIAS NPN 12V 0.5A EMT3

Transistor Type: NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

封裝: -

庫存9,000

500 mA

12 V

2.2 kOhms

10 kOhms

140 @ 100mA, 2V

300mV @ 5mA, 100mA

500nA

260 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3

DTC143XMFHAT2L

Rohm Semiconductor

TRANS PREBIAS NPN 0.1A VMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

封裝: -

庫存6,495

100 mA

-

4.7 kOhms

10 kOhms

30 @ 10mA, 5V

300mV @ 500µA, 10mA

-

250 MHz

150 mW

Surface Mount

SOT-723

VMT3

DTA123ECAHZGT116

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A SST3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

封裝: -

庫存9,000

100 mA

50 V

2.2 kOhms

20 @ 20mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

DTA114TMFHAT2L

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A VMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

封裝: -

Request a Quote

100 mA

50 V

10 kOhms

-

100 @ 1mA, 5V

300mV @ 1mA, 10mA

500nA (ICBO)

250 MHz

150 mW

Surface Mount

SOT-723

VMT3

DTA144WCAT116

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A SST3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

封裝: -

庫存7,194

100 mA

50 V

47 kOhms

22 kOhms

56 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

DTA123EE3HZGTL

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A EMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

封裝: -

庫存9,000

100 mA

50 V

2.2 kOhms

20 @ 20mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3

DTC123JU3T106

Rohm Semiconductor

TRANS PREBIAS NPN 0.1A UMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

封裝: -

庫存25,461

100 mA

-

2.2 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

-

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

UMT3

DTA115EE3HZGTL

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A EMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 100 kOhms
Resistor - Emitter Base (R2) (Ohms): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

封裝: -

庫存9,000

100 mA

50 V

100 kOhms

82 @ 5mA, 5V

300mV @ 250µA, 5mA

500nA

250 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3

DTB123EKFRAT146

Rohm Semiconductor

TRANS PREBIAS PNP 0.5A SMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

封裝: -

庫存5,733

500 mA

-

2.2 kOhms

39 @ 50mA, 5V

300mV @ 2.5mA, 50mA

-

200 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

DTA114TU3HZGT106

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A UMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

封裝: -

庫存5,853

100 mA

50 V

10 kOhms

-

100 @ 1mA, 5V

300mV @ 1mA, 10mA

500nA (ICBO)

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

UMT3

DTD113ECHZGT116

Rohm Semiconductor

TRANS PREBIAS NPN 0.5A SST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 1 kOhms
Resistor - Emitter Base (R2) (Ohms): 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

封裝: -

庫存8,955

500 mA

-

1 kOhms

33 @ 50mA, 5V

300mV @ 2.5mA, 50mA

-

200 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

DTC124ECAHZGT116

Rohm Semiconductor

TRANS PREBIAS NPN 0.1A SST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250 MHz
Power - Max: 350 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

封裝: -

庫存3,906

100 mA

-

22 kOhms

56 @ 5mA, 5V

300mV @ 500µA, 10mA

-

250 MHz

350 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3