Infineon Technologies has introduced new HYPERRAM™ 3.0 devices to further complement its high-bandwidth, low-pin-count memory solutions. The device features a new 16-bit extended HyperBus™ interface that doubles throughput to 800MBps. With the introduction of HYPERRAM™ 3.0 devices, Infineon offers a complete portfolio of low pin count, low power, high bandwidth memories. The chip is ideal for applications that require extended RAM memory, including video buffering, factory automation, artificial intelligence Internet of Things (AIoT) and vehicle-to-everything (V2X), and applications that require scratchpad memory for data-intensive computing.
Ramesh Chettuvetty, Senior Marketing and Applications Director, Automotive Electronics, Infineon Technologies, said: "With nearly three decades of expertise in memory solutions, Infineon is delighted to bring another industry first to the market. The data throughput per pin of the new HYPERRAM™ 3.0 memory solution is much higher than existing technologies such as PSRAM, SDR DRAM, etc. Its low power consumption enables lower power consumption without sacrificing throughput , so this memory is ideal for industrial and IoT solutions.”
Infineon HYPERRAM is a PSRAM-based stand-alone volatile memory that provides a cost-effective add-on to expand memory. Its data rate is comparable to SDR DRAM, but it uses fewer pins and consumes less power. The higher data throughput per pin of the HyperBus™ interface enables the use of microcontrollers (MCUs) with lower pin counts and PCBs with fewer layers, providing a lower complexity and more cost optimized solution for target applications design scheme.
