Infineon provides CoolSiC power devices for Bloom Energy's electrolysis system and fuel cells | 黑森爾電子
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Infineon provides CoolSiC power devices for Bloom Energy's electrolysis system and fuel cells

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發佈日期: 2022-10-28, Infineon Technologies

    The CoolSiC MOSFET and CoolSiC diode of Infineon Technology Co., Ltd. were selected by Bloom Energy, which is headquartered in California, for power conversion in its fuel cell product Bloom's Energy Server and Bloom Electrolyser.

    The fuel cell and electrolysis system provided by Bloom Energy can help mitigate climate change and provide multiple ways to achieve net zero carbon emissions. These two products can generate adaptable, sustainable and predictable energy without burning the whole process. The single solid oxide fuel cell (SOFC) of the energy platform uses natural gas, biogas or hydrogen as fuel. This system can continuously supply power with high power generation efficiency, can withstand grid faults, and can work normally under the conditions of - 20 ° C to 45 ° C.

    Dr. Peter Wawer, President of Industrial Power Control Business Unit of Infineon Technology, said: "Reducing global carbon emissions and successfully carrying out the energy transformation are the key to tackling climate change, and also the two challenges ahead of us. Infineon believes that hydrogen is an ideal choice to replace traditional energy and reduce carbon emissions, so it is also an important hand to promote the energy industry and automobile industry to achieve low-carbon. We are very pleased to see that Infineon's CoolSiC device has made an important contribution to the optimization and further development of hydrogen technology Contribution. "

      For the sake of efficiency, Bloom Energy decided to use CoolSiC MOSFET and diode in its advanced and leading fuel cell system to boost power supply. Compared with the previous generation products using silicon materials, the energy efficiency of the system is improved by 1%, the power density is increased by 30%, and the size and cost are reduced by 30%.

   CoolSiC MOSFET IMZ120R030M1H adopts TO-247-4 package to achieve lower switching and conduction loss compared with similar products, and provides high threshold voltage exceeding 4 V. This product relies on 0 V off grid voltage to achieve simple grid control. The device has a wide range of grid source voltage, and uses a solid, low loss body diode designed for hard commutation. Its switching loss is not affected by temperature.

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