Rohm Semiconductor 產品 - 電晶體 - FET、MOSFET - 陣列

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SH8M51GZETB	Rohm Semiconductor	MOSFET N/P-CH 100V 3A/2.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	庫存14,688	-	100V	3A (Ta), 2.5A (Ta)	170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V	2.5V @ 1mA	8.5nC @ 5V, 12.5nC @ 5V	610pF @ 25V, 1550pF @ 25V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
QH8KE6TCR	Rohm Semiconductor	100V 4A, DUAL NCH+NCH, TSMT8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V Power - Max: 1.1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	封裝: -	庫存9,000	-	100V	4A (Ta)	56mOhm @ 4A, 10V	2.5V @ 1mA	6.7nC @ 10V	305pF @ 50V	1.1W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
SP8K2HZGTB	Rohm Semiconductor	MOSFET 2N-CH 30V 6A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	庫存7,170	-	30V	6A (Ta)	30mOhm @ 6A, 10V	2.5V @ 1mA	10.1nC @ 5V	520pF @ 10V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
HP8MB5TB1	Rohm Semiconductor	40V 16.5A, DUAL NCH+PCH, HSOP8, FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V Power - Max: 3W (Ta), 20W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	封裝: -	庫存7,500	-	40V	6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc)	46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V	2.5V @ 1mA	3.5nC @ 10V, 17.2nC @ 10V	150pF @ 20V, 920pF @ 20V	3W (Ta), 20W (Tc)	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
QH8JB5TCR	Rohm Semiconductor	MOSFET 2P-CH 40V 5A TSMT8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V Power - Max: 1.1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	封裝: -	庫存7,404	-	40V	5A (Ta)	41mOhm @ 5A, 10V	2.5V @ 1mA	17.2nC @ 10V	920pF @ 20V	1.1W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
HS8K1TB	Rohm Semiconductor	MOSFET 2N-CH 30V 10A/11A HSML FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 11A (Ta) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 7.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V, 429pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: HSML3030L10	封裝: -	庫存31,440	-	30V	10A (Ta), 11A (Ta)	14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V	2.5V @ 1mA	6nC @ 10V, 7.4nC @ 10V	348pF @ 15V, 429pF @ 15V	2W (Ta)	150°C (TJ)	Surface Mount	8-UDFN Exposed Pad	HSML3030L10
UT6MC5TCR	Rohm Semiconductor	MOSFET 60V 3.5A/2.5A HUML2020L8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Supplier Device Package: HUML2020L8	封裝: -	庫存14,970	-	60V	3.5A (Ta), 2.5A (Ta)	95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V	2.5V @ 1mA	-	-	2W (Ta)	150°C (TJ)	Surface Mount	6-PowerUDFN	HUML2020L8
SP8M6HZGTB	Rohm Semiconductor	MOSFET N/P-CH 30V 5A/3.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta) Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	庫存7,458	-	30V	5A (Ta), 3.5A (Ta)	51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V	2.5V @ 1mA	3.9nC @ 5V, 5.5nC @ 5V	230pF @ 10V, 490pF @ 10V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SP8K32FRATB	Rohm Semiconductor	MOSFET 2N-CH 60V 4.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	Request a Quote	-	60V	4.5A (Ta)	65mOhm @ 4.5A, 10V	2.5V @ 1mA	10nC @ 5V	500pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SP8M6FRATB	Rohm Semiconductor	MOSFET N/P-CH 30V 5A/3.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta) Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V Power - Max: 2W Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	Request a Quote	-	30V	5A (Ta), 3.5A (Ta)	51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V	2.5V @ 1mA	3.9nC @ 5V, 5.5nC @ 5V	230pF @ 10V, 490pF @ 10V	2W	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SP8M3HZGTB	Rohm Semiconductor	MOSFET N/P-CH 30V 5A/4.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta) Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	庫存6,975	-	30V	5A (Ta), 4.5A (Ta)	51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V	2.5V @ 1mA	3.9nC @ 5V, 8.5nC @ 5V	230pF @ 10V, 850pF @ 10V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
HP8KE6TB1	Rohm Semiconductor	MOSFET 2N-CH 100V 6A/17A 8HSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 17A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V Power - Max: 3W (Ta), 21W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	封裝: -	庫存7,374	-	100V	6A (Ta), 17A (Tc)	54mOhm @ 6A, 10V	2.5V @ 1mA	6.7nC @ 10V	305pF @ 50V	3W (Ta), 21W (Tc)	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
EM6J1T2CR	Rohm Semiconductor	MOSFET 2P-CH 20V EMT6 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SP8K3TB1	Rohm Semiconductor	MOSFET 2N-CH 30V 7A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	Request a Quote	Logic Level Gate, 4V Drive	30V	7A (Ta)	24mOhm @ 7A, 10V	2.5V @ 1mA	11.8nC @ 5V	600pF @ 10V	2W (Ta)	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
HP8KE7TB1	Rohm Semiconductor	MOSFET 2N-CH 100V 10A/24A 8HSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 19.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 50V Power - Max: 3W (Ta), 26W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	封裝: -	庫存7,425	-	100V	10A (Ta), 24A (Tc)	19.6mOhm @ 10A, 10V	2.5V @ 1mA	19.8nC @ 10V	1100pF @ 50V	3W (Ta), 26W (Tc)	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
US6J12TCR	Rohm Semiconductor	MOSFET 2P-CH 12V 2A TUMT6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V Power - Max: 910mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6	封裝: -	庫存8,700	-	12V	2A (Ta)	105mOhm @ 2A, 4.5V	1V @ 1mA	7.6nC @ 4.5V	850pF @ 6V	910mW (Ta)	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	TUMT6
UM6K31NFHATCN	Rohm Semiconductor	MOSFET 2N-CH 60V 0.25A UMT6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封裝: -	庫存7,290	-	60V	250mA (Ta)	2.4Ohm @ 250mA, 10V	2.3V @ 1mA	-	15pF @ 25V	150mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
UT6JC5TCR	Rohm Semiconductor	MOSFET 2P-CH 60V 2.5A HUML2020L8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Supplier Device Package: HUML2020L8	封裝: -	庫存7,023	-	60V	2.5A (Ta)	280mOhm @ 2.5A, 10V	2.5V @ 1mA	6.3nC @ 10V	265pF @ 30V	2W (Ta)	150°C (TJ)	Surface Mount	6-PowerUDFN	HUML2020L8
UT6MA2TCR	Rohm Semiconductor	MOSFET N/P-CH 30V 4A HUML2020L8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Supplier Device Package: HUML2020L8	封裝: -	庫存98,130	-	30V	4A (Ta)	46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V	2.5V @ 1mA	4.3nC @ 10V, 6.7nC @ 10V	180pF @ 15V, 305pF @ 15V	2W (Ta)	150°C (TJ)	Surface Mount	6-PowerUDFN	HUML2020L8
UT6K3TCR1	Rohm Semiconductor	MOSFET 2N-CH 30V 5.5A HUML2020L8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Supplier Device Package: HUML2020L8	封裝: -	庫存8,985	-	30V	5.5A (Ta)	42mOhm @ 5A, 4.5V	1.5V @ 1mA	4nC @ 4.5V	450pF @ 15V	2W (Ta)	150°C (TJ)	Surface Mount	8-PowerUDFN	HUML2020L8
QH8KC5TCR	Rohm Semiconductor	MOSFET 2N-CH 60V 3A TSMT8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V Power - Max: 1.1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	封裝: -	庫存3,471	-	60V	3A (Ta)	90mOhm @ 3A, 10V	2.5V @ 1mA	3.1nC @ 10V	135pF @ 30V	1.1W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
SP8K24HZGTB	Rohm Semiconductor	MOSFET 2N-CH 45V 6A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	庫存7,167	-	45V	6A (Ta)	25mOhm @ 6A, 10V	2.5V @ 1mA	21.6nC @ 5V	1400pF @ 10V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
QS6K1FRATR	Rohm Semiconductor	MOSFET 2N-CH 30V 1A TSMT6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V Power - Max: 900mW (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSMT6 (SC-95)	封裝: -	庫存42,042	Logic Level Gate, 2.5V Drive	30V	1A (Ta)	238mOhm @ 1A, 4.5V	1.5V @ 1mA	2.4nC @ 4.5V	77pF @ 10V	900mW (Tc)	150°C	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSMT6 (SC-95)
BSM300D12P3E005	Rohm Semiconductor	SIC 2N-CH 1200V 300A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 5.6V @ 91mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V Power - Max: 1260W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封裝: -	庫存18	-	1200V (1.2kV)	300A (Tc)	-	5.6V @ 91mA	-	14000pF @ 10V	1260W (Tc)	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
QH8KC6TCR	Rohm Semiconductor	MOSFET 2N-CH 60V 5.5A TSMT8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V Power - Max: 1.1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	封裝: -	庫存9,876	-	60V	5.5A (Ta)	30mOhm @ 5.5A, 10V	2.5V @ 1mA	7.6nC @ 10V	460pF @ 30V	1.1W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
SP8K24FRATB	Rohm Semiconductor	MOSFET 2N-CH 45V 6A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 2W Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	庫存3	-	45V	6A (Ta)	25mOhm @ 6A, 10V	2.5V @ 1mA	21.6nC @ 5V	1400pF @ 10V	2W	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
LP8M3FP8TB1	Rohm Semiconductor	MOSFET N-CH SOP8G FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
HP8KC6TB1	Rohm Semiconductor	60V 23A, DUAL NCH+NCH, HSOP8, PO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V Power - Max: 3W (Ta), 21W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	封裝: -	庫存7,500	-	60V	8.5A (Ta), 23A (Tc)	27mOhm @ 8.5A, 10V	2.5V @ 1mA	7.6nC @ 10V	460pF @ 30V	3W (Ta), 21W (Tc)	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
UT6JA3TCR	Rohm Semiconductor	MOSFET 2P-CH 20V 5A HUML2020L8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Supplier Device Package: HUML2020L8	封裝: -	庫存8,475	-	20V	5A (Ta)	59mOhm @ 5A, 4.5V	1.5V @ 1mA	6.5nC @ 4.5V	460pF @ 10V	2W (Ta)	150°C (TJ)	Surface Mount	6-PowerUDFN	HUML2020L8
SP8J66FRATB	Rohm Semiconductor	MOSFET 2P-CH 9A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	Request a Quote	-	-	9A (Ta)	18.5mOhm @ 9A, 10V	2.5V @ 1mA	-	-	-	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP

SH8M51GZETB

Rohm Semiconductor

MOSFET N/P-CH 100V 3A/2.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

庫存14,688

-

100V

3A (Ta), 2.5A (Ta)

170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V

2.5V @ 1mA

8.5nC @ 5V, 12.5nC @ 5V

610pF @ 25V, 1550pF @ 25V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

QH8KE6TCR

Rohm Semiconductor

100V 4A, DUAL NCH+NCH, TSMT8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
Power - Max: 1.1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

封裝: -

庫存9,000

-

100V

4A (Ta)

56mOhm @ 4A, 10V

2.5V @ 1mA

6.7nC @ 10V

305pF @ 50V

1.1W (Ta)

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

SP8K2HZGTB

Rohm Semiconductor

MOSFET 2N-CH 30V 6A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

庫存7,170

-

30V

6A (Ta)

30mOhm @ 6A, 10V

2.5V @ 1mA

10.1nC @ 5V

520pF @ 10V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

HP8MB5TB1

Rohm Semiconductor

40V 16.5A, DUAL NCH+PCH, HSOP8,

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
Power - Max: 3W (Ta), 20W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP

封裝: -

庫存7,500

-

40V

6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc)

46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V

2.5V @ 1mA

3.5nC @ 10V, 17.2nC @ 10V

150pF @ 20V, 920pF @ 20V

3W (Ta), 20W (Tc)

150°C (TJ)

Surface Mount

8-PowerTDFN

8-HSOP

QH8JB5TCR

Rohm Semiconductor

MOSFET 2P-CH 40V 5A TSMT8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Power - Max: 1.1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

封裝: -

庫存7,404

-

40V

5A (Ta)

41mOhm @ 5A, 10V

2.5V @ 1mA

17.2nC @ 10V

920pF @ 20V

1.1W (Ta)

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

HS8K1TB

Rohm Semiconductor

MOSFET 2N-CH 30V 10A/11A HSML

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 11A (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 7.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V, 429pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: HSML3030L10

封裝: -

庫存31,440

-

30V

10A (Ta), 11A (Ta)

14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V

2.5V @ 1mA

6nC @ 10V, 7.4nC @ 10V

348pF @ 15V, 429pF @ 15V

2W (Ta)

150°C (TJ)

Surface Mount

8-UDFN Exposed Pad

HSML3030L10

UT6MC5TCR

Rohm Semiconductor

MOSFET 60V 3.5A/2.5A HUML2020L8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Supplier Device Package: HUML2020L8

封裝: -

庫存14,970

-

60V

3.5A (Ta), 2.5A (Ta)

95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V

2.5V @ 1mA

-

2W (Ta)

150°C (TJ)

Surface Mount

6-PowerUDFN

HUML2020L8

SP8M6HZGTB

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/3.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

庫存7,458

-

30V

5A (Ta), 3.5A (Ta)

51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V

2.5V @ 1mA

3.9nC @ 5V, 5.5nC @ 5V

230pF @ 10V, 490pF @ 10V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SP8K32FRATB

Rohm Semiconductor

MOSFET 2N-CH 60V 4.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

Request a Quote

-

60V

4.5A (Ta)

65mOhm @ 4.5A, 10V

2.5V @ 1mA

10nC @ 5V

500pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SP8M6FRATB

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/3.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

Request a Quote

-

30V

5A (Ta), 3.5A (Ta)

51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V

2.5V @ 1mA

3.9nC @ 5V, 5.5nC @ 5V

230pF @ 10V, 490pF @ 10V

2W

150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SP8M3HZGTB

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

庫存6,975

-

30V

5A (Ta), 4.5A (Ta)

51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V

2.5V @ 1mA

3.9nC @ 5V, 8.5nC @ 5V

230pF @ 10V, 850pF @ 10V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

HP8KE6TB1

Rohm Semiconductor

MOSFET 2N-CH 100V 6A/17A 8HSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
Power - Max: 3W (Ta), 21W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP

封裝: -

庫存7,374

-

100V

6A (Ta), 17A (Tc)

54mOhm @ 6A, 10V

2.5V @ 1mA

6.7nC @ 10V

305pF @ 50V

3W (Ta), 21W (Tc)

150°C (TJ)

Surface Mount

8-PowerTDFN

8-HSOP

EM6J1T2CR

Rohm Semiconductor

MOSFET 2P-CH 20V EMT6

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

SP8K3TB1

Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

Request a Quote

Logic Level Gate, 4V Drive

30V

7A (Ta)

24mOhm @ 7A, 10V

2.5V @ 1mA

11.8nC @ 5V

600pF @ 10V

2W (Ta)

150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

HP8KE7TB1

Rohm Semiconductor

MOSFET 2N-CH 100V 10A/24A 8HSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 50V
Power - Max: 3W (Ta), 26W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP

封裝: -

庫存7,425

-

100V

10A (Ta), 24A (Tc)

19.6mOhm @ 10A, 10V

2.5V @ 1mA

19.8nC @ 10V

1100pF @ 50V

3W (Ta), 26W (Tc)

150°C (TJ)

Surface Mount

8-PowerTDFN

8-HSOP

US6J12TCR

Rohm Semiconductor

MOSFET 2P-CH 12V 2A TUMT6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V
Power - Max: 910mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: TUMT6

封裝: -

庫存8,700

-

12V

2A (Ta)

105mOhm @ 2A, 4.5V

1V @ 1mA

7.6nC @ 4.5V

850pF @ 6V

910mW (Ta)

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

TUMT6

UM6K31NFHATCN

Rohm Semiconductor

MOSFET 2N-CH 60V 0.25A UMT6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封裝: -

庫存7,290

-

60V

250mA (Ta)

2.4Ohm @ 250mA, 10V

2.3V @ 1mA

-

15pF @ 25V

150mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

UT6JC5TCR

Rohm Semiconductor

MOSFET 2P-CH 60V 2.5A HUML2020L8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Supplier Device Package: HUML2020L8

封裝: -

庫存7,023

-

60V

2.5A (Ta)

280mOhm @ 2.5A, 10V

2.5V @ 1mA

6.3nC @ 10V

265pF @ 30V

2W (Ta)

150°C (TJ)

Surface Mount

6-PowerUDFN

HUML2020L8

UT6MA2TCR

Rohm Semiconductor

MOSFET N/P-CH 30V 4A HUML2020L8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Supplier Device Package: HUML2020L8

封裝: -

庫存98,130

-

30V

4A (Ta)

46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V

2.5V @ 1mA

4.3nC @ 10V, 6.7nC @ 10V

180pF @ 15V, 305pF @ 15V

2W (Ta)

150°C (TJ)

Surface Mount

6-PowerUDFN

HUML2020L8

UT6K3TCR1

Rohm Semiconductor

MOSFET 2N-CH 30V 5.5A HUML2020L8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Supplier Device Package: HUML2020L8

封裝: -

庫存8,985

-

30V

5.5A (Ta)

42mOhm @ 5A, 4.5V

1.5V @ 1mA

4nC @ 4.5V

450pF @ 15V

2W (Ta)

150°C (TJ)

Surface Mount

8-PowerUDFN

HUML2020L8

QH8KC5TCR

Rohm Semiconductor

MOSFET 2N-CH 60V 3A TSMT8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Power - Max: 1.1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

封裝: -

庫存3,471

-

60V

3A (Ta)

90mOhm @ 3A, 10V

2.5V @ 1mA

3.1nC @ 10V

135pF @ 30V

1.1W (Ta)

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

SP8K24HZGTB

Rohm Semiconductor

MOSFET 2N-CH 45V 6A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

庫存7,167

-

45V

6A (Ta)

25mOhm @ 6A, 10V

2.5V @ 1mA

21.6nC @ 5V

1400pF @ 10V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

QS6K1FRATR

Rohm Semiconductor

MOSFET 2N-CH 30V 1A TSMT6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
Power - Max: 900mW (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSMT6 (SC-95)

封裝: -

庫存42,042

Logic Level Gate, 2.5V Drive

30V

1A (Ta)

238mOhm @ 1A, 4.5V

1.5V @ 1mA

2.4nC @ 4.5V

77pF @ 10V

900mW (Tc)

150°C

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSMT6 (SC-95)

BSM300D12P3E005

Rohm Semiconductor

SIC 2N-CH 1200V 300A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 5.6V @ 91mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V
Power - Max: 1260W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封裝: -

庫存18

-

1200V (1.2kV)

300A (Tc)

-

5.6V @ 91mA

-

14000pF @ 10V

1260W (Tc)

-40°C ~ 150°C (TJ)

Chassis Mount

Module

QH8KC6TCR

Rohm Semiconductor

MOSFET 2N-CH 60V 5.5A TSMT8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Power - Max: 1.1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

封裝: -

庫存9,876

-

60V

5.5A (Ta)

30mOhm @ 5.5A, 10V

2.5V @ 1mA

7.6nC @ 10V

460pF @ 30V

1.1W (Ta)

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

SP8K24FRATB

Rohm Semiconductor

MOSFET 2N-CH 45V 6A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

庫存3

-

45V

6A (Ta)

25mOhm @ 6A, 10V

2.5V @ 1mA

21.6nC @ 5V

1400pF @ 10V

2W

150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

LP8M3FP8TB1

Rohm Semiconductor

MOSFET N-CH SOP8G

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

HP8KC6TB1

Rohm Semiconductor

60V 23A, DUAL NCH+NCH, HSOP8, PO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Power - Max: 3W (Ta), 21W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP

封裝: -

庫存7,500

-

60V

8.5A (Ta), 23A (Tc)

27mOhm @ 8.5A, 10V

2.5V @ 1mA

7.6nC @ 10V

460pF @ 30V

3W (Ta), 21W (Tc)

150°C (TJ)

Surface Mount

8-PowerTDFN

8-HSOP

UT6JA3TCR

Rohm Semiconductor

MOSFET 2P-CH 20V 5A HUML2020L8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Supplier Device Package: HUML2020L8

封裝: -

庫存8,475

-

20V

5A (Ta)

59mOhm @ 5A, 4.5V

1.5V @ 1mA

6.5nC @ 4.5V

460pF @ 10V

2W (Ta)

150°C (TJ)

Surface Mount

6-PowerUDFN

HUML2020L8

SP8J66FRATB

Rohm Semiconductor

MOSFET 2P-CH 9A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

Request a Quote

-

9A (Ta)

18.5mOhm @ 9A, 10V

2.5V @ 1mA

-

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP