圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix |
MOSFET N-CH 30V
|
封裝: - |
庫存6,672 |
|
- | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 30V
|
封裝: - |
庫存15,336 |
|
- | - | - | 4.5V, 10V | - | - | - | ±25V | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET P-CH 100V 16.3A TO220AB
|
封裝: TO-220-3 |
庫存6,672 |
|
MOSFET (Metal Oxide) | 100V | 16.3A (Tc) | 6V, 10V | 4V @ 250µA | 60nC @ 10V | 2100pF @ 50V | ±20V | - | 3.1W (Ta), 73.5W (Tc) | 13.8 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 100V 36A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存13,176 |
|
MOSFET (Metal Oxide) | 100V | 36A (Tc) | 4.5V, 10V | 3V @ 250µA | 160nC @ 10V | 4600pF @ 50V | ±20V | - | 18.8W (Ta), 125W (Tc) | 4.2 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 100V 16.7A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存6,768 |
|
MOSFET (Metal Oxide) | 100V | 16.7A (Tc) | 6V, 10V | 4V @ 250µA | 60nC @ 10V | 2110pF @ 25V | ±20V | - | 3.75W (Ta), 88.2W (Tc) | 13.8 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |