頁 2 - IXYS 產品 - 電晶體 - FET、MOSFET - 單

IXFQ170N15X3

IXYS

DISCMSFT NCHULTRJNCTN X3CLASS TO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7620 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 85A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

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MOSFET (Metal Oxide)

150 V

170A (Tc)

10V

4.5V @ 4mA

122 nC @ 10 V

7620 pF @ 25 V

±20V

-

520W (Tc)

6.7mOhm @ 85A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3P

TO-3P-3, SC-65-3

IXTA20N65X-TRL

IXYS

MOSFET N-CH 650V 20A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

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MOSFET (Metal Oxide)

650 V

20A (Tc)

10V

5.5V @ 250µA

35 nC @ 10 V

1390 pF @ 25 V

±30V

-

320W (Tc)

210mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTQ3N150M

IXYS

MOSFET N-CH 1500V 1.83A TO3PFP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1500 V
Current - Continuous Drain (Id) @ 25°C: 1.83A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 73W (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PFP
Package / Case: TO-3P-3 Full Pack

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MOSFET (Metal Oxide)

1500 V

1.83A (Tc)

10V

5V @ 250µA

38.6 nC @ 10 V

1375 pF @ 25 V

±30V

-

73W (Tc)

7.3Ohm @ 1.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3PFP

TO-3P-3 Full Pack

IXFN74N100X

IXYS

MOSFET N-CH 1000V 74A SOT227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1170W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 37A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

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MOSFET (Metal Oxide)

1000 V

74A (Tc)

10V

5.5V @ 8mA

425 nC @ 10 V

17000 pF @ 25 V

±30V

-

1170W (Tc)

66mOhm @ 37A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXFH130N15X3

IXYS

MOSFET N-CH 150V 130A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

封裝: -

庫存123

MOSFET (Metal Oxide)

150 V

130A (Tc)

10V

4.5V @ 1.5mA

80 nC @ 10 V

5230 pF @ 25 V

±20V

-

390W (Tc)

9mOhm @ 65A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXTH)

TO-247-3

IXFA90N20X3-TRL

IXYS

MOSFET N-CH 200V 90A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

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MOSFET (Metal Oxide)

200 V

90A (Tc)

10V

4.5V @ 1.5mA

78 nC @ 10 V

5420 pF @ 25 V

±20V

-

390W (Tc)

12.8mOhm @ 45A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFA4N100P-TRL

IXYS

MOSFET N-CH 1000V 4A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

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MOSFET (Metal Oxide)

1000 V

4A (Tc)

10V

6V @ 250µA

26 nC @ 10 V

1456 pF @ 25 V

±20V

-

150W (Tc)

3.3Ohm @ 2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTM12N100

IXYS

MOSFET N-CH 1000V 12A TO204AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA (IXTM)
Package / Case: TO-204AA, TO-3

封裝: -

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MOSFET (Metal Oxide)

1000 V

12A (Tc)

10V

4.5V @ 250µA

170 nC @ 10 V

4000 pF @ 25 V

±20V

-

300W (Tc)

1.05Ohm @ 6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-204AA (IXTM)

TO-204AA, TO-3

IXFX1985

IXYS

MOSFET N-CH 19A PLUS247-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

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-

IXTT4N150HV-TRL

IXYS

MOSFET N-CH 1500V 4A TO268HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1500 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268HV (IXTT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封裝: -

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MOSFET (Metal Oxide)

1500 V

4A (Tc)

10V

5V @ 250µA

44.5 nC @ 10 V

1576 pF @ 25 V

±30V

-

280W (Tc)

6Ohm @ 2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-268HV (IXTT)

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

IXTA140P05T-TRL

IXYS

IXTA140P05T

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50 V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

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MOSFET (Metal Oxide)

50 V

140A (Tc)

10V

4V @ 250µA

200 nC @ 10 V

13500 pF @ 25 V

±15V

-

298W (Tc)

9mOhm @ 70A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263AA

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFY30N25X3

IXYS

MOSFET N-CH 250V 30A TO252AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

庫存19,077

MOSFET (Metal Oxide)

250 V

30A (Tc)

10V

4.5V @ 500µA

21 nC @ 10 V

1450 pF @ 25 V

±20V

-

176W (Tc)

60mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

IXFA18N65X3

IXYS

DISCRETE MOSFET 18A 650V X3 TO26

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

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-

IXFA18N65X2

IXYS

MOSFET N-CH 650V 18A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

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MOSFET (Metal Oxide)

650 V

18A (Tc)

10V

5V @ 1.5mA

29 nC @ 10 V

1520 pF @ 25 V

±30V

-

290W (Tc)

200mOhm @ 9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFP90N20X3M

IXYS

MOSFET N-CH 200V 90A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Isolated Tab
Package / Case: TO-220-3 Full Pack, Isolated Tab

封裝: -

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MOSFET (Metal Oxide)

200 V

90A (Tc)

10V

4.5V @ 1.5mA

78 nC @ 10 V

5420 pF @ 25 V

±20V

-

36W (Tc)

12.8mOhm @ 45A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220 Isolated Tab

TO-220-3 Full Pack, Isolated Tab

IXFA20N60X3

IXYS

DISCRETE MOSFET 20A 600V X3 TO26

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

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-

IXTA10P15T-TRL

IXYS

MOSFET P-CH 150V 10A TO263

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 83W (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

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MOSFET (Metal Oxide)

150 V

10A (Tc)

10V

4.5V @ 250µA

36 nC @ 10 V

2210 pF @ 25 V

±15V

-

83W (Ta)

350mOhm @ 5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFT150N17T2

IXYS

MOSFET N-CH 175V 150A TO268HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 175 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 880W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268HV (IXFT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封裝: -

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MOSFET (Metal Oxide)

175 V

150A (Tc)

10V

4.5V @ 1mA

233 nC @ 10 V

14600 pF @ 25 V

±20V

-

880W (Tc)

12mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-268HV (IXFT)

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

IXTM50N20

IXYS

MOSFET N-CH 200V 50A TO204AE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AE
Package / Case: TO-204AE

封裝: -

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MOSFET (Metal Oxide)

200 V

50A (Tc)

10V

4V @ 250µA

220 nC @ 10 V

4600 pF @ 25 V

±20V

-

300W (Tc)

45mOhm @ 25A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-204AE

IXTA260N055T2

IXYS

MOSFET N-CH 55V 260A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

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MOSFET (Metal Oxide)

55 V

260A (Tc)

10V

4V @ 250µA

140 nC @ 10 V

10800 pF @ 25 V

±20V

-

480W (Tc)

3.3mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-263AA

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFP56N30X3

IXYS

MOSFET N-CH 300V 56A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

封裝: -

庫存1,212

MOSFET (Metal Oxide)

300 V

56A (Tc)

10V

4.5V @ 1.5mA

56 nC @ 10 V

3750 pF @ 25 V

±20V

-

320W (Tc)

27mOhm @ 28A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

IXTC110N055T

IXYS

MOSFET N-CH ISOPLUS220

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

-

IXTP120N20X4

IXYS

MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 (IXTP)
Package / Case: TO-220-3

封裝: -

庫存984

MOSFET (Metal Oxide)

200 V

120A (Tc)

10V

4.5V @ 250µA

108 nC @ 10 V

6100 pF @ 25 V

±20V

-

417W (Tc)

9.5mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220 (IXTP)

TO-220-3

IXTA1R6N100D2HV

IXYS

MOSFET N-CH 1000V 1.6A TO263HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 10 V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263HV
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

庫存717

MOSFET (Metal Oxide)

1000 V

1.6A (Tj)

0V

4.5V @ 100µA

27 nC @ 5 V

645 pF @ 10 V

±20V

Depletion Mode

100W (Tc)

10Ohm @ 800mA, 0V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263HV

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXKT70N60C5-TUB

IXYS

MOSFET N-CH 600V 68A TO268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: TO-268AA
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封裝: -

Request a Quote

MOSFET (Metal Oxide)

600 V

68A (Tc)

-

Surface Mount

TO-268AA

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

IXTC96N25T

IXYS

MOSFET N-CH ISOPLUS220

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

-

IXTK400N15X4

IXYS

MOSFET N-CH 150V 400A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1500W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264
Package / Case: TO-264-3, TO-264AA

封裝: -

Request a Quote

MOSFET (Metal Oxide)

150 V

400A (Tc)

10V

4.5V @ 1mA

430 nC @ 10 V

14500 pF @ 25 V

±20V

-

1500W (Tc)

3.1mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-264

TO-264-3, TO-264AA

IXTF6N200P3

IXYS

MOSFET N-CH 2000V 4A I4PAC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2000 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 215W (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS i4-PAC™
Package / Case: ISOPLUSi5-PAK™

封裝: -

Request a Quote

MOSFET (Metal Oxide)

2000 V

4A (Tc)

10V

5V @ 250µA

143 nC @ 10 V

3700 pF @ 25 V

±20V

-

215W (Tc)

4.2Ohm @ 3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS i4-PAC™

ISOPLUSi5-PAK™

零件編號	製造商	描述	封裝	庫存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFQ170N15X3	IXYS	DISCMSFT NCHULTRJNCTN X3CLASS TO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7620 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	150 V	170A (Tc)	10V	4.5V @ 4mA	122 nC @ 10 V	7620 pF @ 25 V	±20V	-	520W (Tc)	6.7mOhm @ 85A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTA20N65X-TRL	IXYS	MOSFET N-CH 650V 20A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	5.5V @ 250µA	35 nC @ 10 V	1390 pF @ 25 V	±30V	-	320W (Tc)	210mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTQ3N150M	IXYS	MOSFET N-CH 1500V 1.83A TO3PFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500 V Current - Continuous Drain (Id) @ 25°C: 1.83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 73W (Tc) Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PFP Package / Case: TO-3P-3 Full Pack	封裝: -	Request a Quote	MOSFET (Metal Oxide)	1500 V	1.83A (Tc)	10V	5V @ 250µA	38.6 nC @ 10 V	1375 pF @ 25 V	±30V	-	73W (Tc)	7.3Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PFP	TO-3P-3 Full Pack
IXFN74N100X	IXYS	MOSFET N-CH 1000V 74A SOT227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1170W (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 37A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	封裝: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	74A (Tc)	10V	5.5V @ 8mA	425 nC @ 10 V	17000 pF @ 25 V	±30V	-	1170W (Tc)	66mOhm @ 37A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFH130N15X3	IXYS	MOSFET N-CH 150V 130A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	封裝: -	庫存123	MOSFET (Metal Oxide)	150 V	130A (Tc)	10V	4.5V @ 1.5mA	80 nC @ 10 V	5230 pF @ 25 V	±20V	-	390W (Tc)	9mOhm @ 65A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFA90N20X3-TRL	IXYS	MOSFET N-CH 200V 90A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote	MOSFET (Metal Oxide)	200 V	90A (Tc)	10V	4.5V @ 1.5mA	78 nC @ 10 V	5420 pF @ 25 V	±20V	-	390W (Tc)	12.8mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFA4N100P-TRL	IXYS	MOSFET N-CH 1000V 4A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	4A (Tc)	10V	6V @ 250µA	26 nC @ 10 V	1456 pF @ 25 V	±20V	-	150W (Tc)	3.3Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTM12N100	IXYS	MOSFET N-CH 1000V 12A TO204AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (IXTM) Package / Case: TO-204AA, TO-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	12A (Tc)	10V	4.5V @ 250µA	170 nC @ 10 V	4000 pF @ 25 V	±20V	-	300W (Tc)	1.05Ohm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AA (IXTM)	TO-204AA, TO-3
IXFX1985	IXYS	MOSFET N-CH 19A PLUS247-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTT4N150HV-TRL	IXYS	MOSFET N-CH 1500V 4A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXTT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封裝: -	Request a Quote	MOSFET (Metal Oxide)	1500 V	4A (Tc)	10V	5V @ 250µA	44.5 nC @ 10 V	1576 pF @ 25 V	±30V	-	280W (Tc)	6Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXTT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXTA140P05T-TRL	IXYS	IXTA140P05T FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote	MOSFET (Metal Oxide)	50 V	140A (Tc)	10V	4V @ 250µA	200 nC @ 10 V	13500 pF @ 25 V	±15V	-	298W (Tc)	9mOhm @ 70A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFY30N25X3	IXYS	MOSFET N-CH 250V 30A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封裝: -	庫存19,077	MOSFET (Metal Oxide)	250 V	30A (Tc)	10V	4.5V @ 500µA	21 nC @ 10 V	1450 pF @ 25 V	±20V	-	176W (Tc)	60mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFA18N65X3	IXYS	DISCRETE MOSFET 18A 650V X3 TO26 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFA18N65X2	IXYS	MOSFET N-CH 650V 18A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote	MOSFET (Metal Oxide)	650 V	18A (Tc)	10V	5V @ 1.5mA	29 nC @ 10 V	1520 pF @ 25 V	±30V	-	290W (Tc)	200mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFP90N20X3M	IXYS	MOSFET N-CH 200V 90A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	封裝: -	Request a Quote	MOSFET (Metal Oxide)	200 V	90A (Tc)	10V	4.5V @ 1.5mA	78 nC @ 10 V	5420 pF @ 25 V	±20V	-	36W (Tc)	12.8mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
IXFA20N60X3	IXYS	DISCRETE MOSFET 20A 600V X3 TO26 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA10P15T-TRL	IXYS	MOSFET P-CH 150V 10A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 83W (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote	MOSFET (Metal Oxide)	150 V	10A (Tc)	10V	4.5V @ 250µA	36 nC @ 10 V	2210 pF @ 25 V	±15V	-	83W (Ta)	350mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFT150N17T2	IXYS	MOSFET N-CH 175V 150A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 175 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 880W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXFT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封裝: -	Request a Quote	MOSFET (Metal Oxide)	175 V	150A (Tc)	10V	4.5V @ 1mA	233 nC @ 10 V	14600 pF @ 25 V	±20V	-	880W (Tc)	12mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-268HV (IXFT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXTM50N20	IXYS	MOSFET N-CH 200V 50A TO204AE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AE Package / Case: TO-204AE	封裝: -	Request a Quote	MOSFET (Metal Oxide)	200 V	50A (Tc)	10V	4V @ 250µA	220 nC @ 10 V	4600 pF @ 25 V	±20V	-	300W (Tc)	45mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AE	TO-204AE
IXTA260N055T2	IXYS	MOSFET N-CH 55V 260A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote	MOSFET (Metal Oxide)	55 V	260A (Tc)	10V	4V @ 250µA	140 nC @ 10 V	10800 pF @ 25 V	±20V	-	480W (Tc)	3.3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFP56N30X3	IXYS	MOSFET N-CH 300V 56A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	封裝: -	庫存1,212	MOSFET (Metal Oxide)	300 V	56A (Tc)	10V	4.5V @ 1.5mA	56 nC @ 10 V	3750 pF @ 25 V	±20V	-	320W (Tc)	27mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXTC110N055T	IXYS	MOSFET N-CH ISOPLUS220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTP120N20X4	IXYS	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 (IXTP) Package / Case: TO-220-3	封裝: -	庫存984	MOSFET (Metal Oxide)	200 V	120A (Tc)	10V	4.5V @ 250µA	108 nC @ 10 V	6100 pF @ 25 V	±20V	-	417W (Tc)	9.5mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220 (IXTP)	TO-220-3
IXTA1R6N100D2HV	IXYS	MOSFET N-CH 1000V 1.6A TO263HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 10 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263HV Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	庫存717	MOSFET (Metal Oxide)	1000 V	1.6A (Tj)	0V	4.5V @ 100µA	27 nC @ 5 V	645 pF @ 10 V	±20V	Depletion Mode	100W (Tc)	10Ohm @ 800mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263HV	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXKT70N60C5-TUB	IXYS	MOSFET N-CH 600V 68A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-268AA Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封裝: -	Request a Quote	MOSFET (Metal Oxide)	600 V	68A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	TO-268AA	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXTC96N25T	IXYS	MOSFET N-CH ISOPLUS220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTK400N15X4	IXYS	MOSFET N-CH 150V 400A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1500W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	封裝: -	Request a Quote	MOSFET (Metal Oxide)	150 V	400A (Tc)	10V	4.5V @ 1mA	430 nC @ 10 V	14500 pF @ 25 V	±20V	-	1500W (Tc)	3.1mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
IXTF6N200P3	IXYS	MOSFET N-CH 2000V 4A I4PAC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2000 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 215W (Tc) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC™ Package / Case: ISOPLUSi5-PAK™	封裝: -	Request a Quote	MOSFET (Metal Oxide)	2000 V	4A (Tc)	10V	5V @ 250µA	143 nC @ 10 V	3700 pF @ 25 V	±20V	-	215W (Tc)	4.2Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS i4-PAC™	ISOPLUSi5-PAK™