頁 92 - IXYS 產品 - 電晶體 - FET、MOSFET - 單

零件編號	製造商	描述	封裝	庫存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFT58N20Q TRL	IXYS	MOSFET N-CH TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 (IXFT) Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	庫存3,392	MOSFET (Metal Oxide)	200V	58A (Tc)	10V	4V @ 4mA	140nC @ 10V	3600pF @ 25V	±20V	-	300W (Tc)	40 mOhm @ 29A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268 (IXFT)	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT52N30Q TRL	IXYS	MOSFET N-CH TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 (IXFT) Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	庫存5,408	MOSFET (Metal Oxide)	300V	52A (Tc)	10V	4V @ 4mA	150nC @ 10V	5300pF @ 25V	±20V	-	360W (Tc)	60 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268 (IXFT)	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT40N30Q TR	IXYS	MOSFET N-CH TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3560pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 (IXFT) Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	庫存6,032	MOSFET (Metal Oxide)	300V	40A (Tc)	10V	4V @ 4mA	140nC @ 10V	3560pF @ 25V	±20V	-	300W (Tc)	85 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268 (IXFT)	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT26N50Q TR	IXYS	MOSFET N-CH TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 (IXFT) Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	庫存7,840	MOSFET (Metal Oxide)	500V	26A (Tc)	10V	4.5V @ 4mA	95nC @ 10V	3900pF @ 25V	±20V	-	300W (Tc)	200 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268 (IXFT)	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT1874 TR	IXYS	MOSFET N-CH TO268 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存4,576	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
T-FD28N50Q-72	IXYS	MOSFET N-CHANNEL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存7,856	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTH21N50Q	IXYS	MOSFET N-CH TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXTH) Package / Case: TO-247-3	封裝: TO-247-3	庫存7,216	MOSFET (Metal Oxide)	500V	21A (Tc)	10V	4V @ 250µA	190nC @ 10V	4200pF @ 25V	±20V	-	300W (Tc)	250 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXTH)	TO-247-3
IXFX80N15Q	IXYS	MOSFET N-CH PLUS247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存2,128	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFX60N25Q	IXYS	MOSFET N-CH PLUS247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存4,960	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFX52N30Q	IXYS	MOSFET N-CH PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	封裝: TO-247-3	庫存2,752	MOSFET (Metal Oxide)	300V	52A (Tc)	-	-	-	-	-	-	360W (Tc)	-	150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3