頁 83 - 電晶體 - IGBT - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - IGBT - 單

記錄 4,424
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庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
NGTB30N60FWG
ON Semiconductor

IGBT 600V 60A 167W TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
  • Power - Max: 167W
  • Switching Energy: 650µJ (on), 650µJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 81ns/190ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 72ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存3,888
600V
60A
120A
1.7V @ 15V, 30A
167W
650µJ (on), 650µJ (off)
Standard
170nC
81ns/190ns
400V, 30A, 10 Ohm, 15V
72ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
RJH60D0DPK-00#T0
Renesas Electronics America

IGBT 600V 45A 140W TO3P

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
  • Power - Max: 140W
  • Switching Energy: 230µJ (on), 290µJ (off)
  • Input Type: Standard
  • Gate Charge: 46nC
  • Td (on/off) @ 25°C: 40ns/80ns
  • Test Condition: 300V, 22A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封裝: TO-3P-3, SC-65-3
庫存2,816
600V
45A
-
2.2V @ 15V, 22A
140W
230µJ (on), 290µJ (off)
Standard
46nC
40ns/80ns
300V, 22A, 5 Ohm, 15V
100ns
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IXSH45N120B
IXYS

IGBT 1200V 75A 300W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A
  • Power - Max: 300W
  • Switching Energy: 13mJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 36ns/360ns
  • Test Condition: 960V, 45A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXSH)
封裝: TO-247-3
庫存4,448
1200V
75A
180A
3V @ 15V, 45A
300W
13mJ (off)
Standard
120nC
36ns/360ns
960V, 45A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXSH)
IXGH35N120B
IXYS

IGBT 1200V 70A 300W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
  • Power - Max: 300W
  • Switching Energy: 3.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 50ns/180ns
  • Test Condition: 960V, 35A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存7,856
1200V
70A
140A
3.3V @ 15V, 35A
300W
3.8mJ (off)
Standard
170nC
50ns/180ns
960V, 35A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
AUIRGP4062D1
Infineon Technologies

IGBT 600V 55A 217W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
  • Power - Max: 217W
  • Switching Energy: 532µJ (on), 311µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 19ns/90ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 102ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存6,464
600V
55A
72A
1.77V @ 15V, 24A
217W
532µJ (on), 311µJ (off)
Standard
77nC
19ns/90ns
400V, 24A, 10 Ohm, 15V
102ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IXBH14N250A
IXYS

IGBT 2500V TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXBH)
封裝: TO-247-3
庫存3,328
2500V
-
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD (IXBH)
IXGT4N250C
IXYS

IGBT 2500V 13A 150W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 46A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 4A
  • Power - Max: 150W
  • Switching Energy: 360µJ (off)
  • Input Type: Standard
  • Gate Charge: 57nC
  • Td (on/off) @ 25°C: -/350ns
  • Test Condition: 1250V, 4A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
庫存7,360
2500V
13A
46A
6V @ 15V, 4A
150W
360µJ (off)
Standard
57nC
-/350ns
1250V, 4A, 20 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
IXGR6N170A
IXYS

IGBT 1700V 5.5A 50W ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 5.5A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
  • Power - Max: 50W
  • Switching Energy: 590µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.5nC
  • Td (on/off) @ 25°C: 46ns/220ns
  • Test Condition: 850V, 6A, 33 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISOPLUS247?
封裝: TO-247-3
庫存3,232
1700V
5.5A
18A
7V @ 15V, 3A
50W
590µJ (on), 180µJ (off)
Standard
18.5nC
46ns/220ns
850V, 6A, 33 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
ISOPLUS247?
RJH60F6DPQ-A0#T0
Renesas Electronics America

IGBT 600V 85A 297.6W TO247A

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 85A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 45A
  • Power - Max: 297.6W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 58ns/131ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247A
封裝: TO-247-3
庫存3,936
600V
85A
-
1.75V @ 15V, 45A
297.6W
-
Standard
-
58ns/131ns
400V, 30A, 5 Ohm, 15V
90ns
150°C (TJ)
Through Hole
TO-247-3
TO-247A
IXGH20N120IH
IXYS

IGBT 1200V TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存7,632
1200V
-
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD (IXGH)
AOK10B60D
Alpha & Omega Semiconductor Inc.

IGBT 600V 20A 163W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
  • Power - Max: 163W
  • Switching Energy: 260µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 17.4nC
  • Td (on/off) @ 25°C: 10ns/72ns
  • Test Condition: 400V, 10A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): 105ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存5,504
600V
20A
40A
1.8V @ 15V, 10A
163W
260µJ (on), 70µJ (off)
Standard
17.4nC
10ns/72ns
400V, 10A, 30 Ohm, 15V
105ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
hot STGB10NB40LZT4
STMicroelectronics

IGBT 440V 20A 150W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
  • Power - Max: 150W
  • Switching Energy: 2.4mJ (on), 5mJ (off)
  • Input Type: Standard
  • Gate Charge: 28nC
  • Td (on/off) @ 25°C: 1.3µs/8µs
  • Test Condition: 328V, 10A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存111,144
440V
20A
40A
1.8V @ 4.5V, 10A
150W
2.4mJ (on), 5mJ (off)
Standard
28nC
1.3µs/8µs
328V, 10A, 1 kOhm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
STGP3NC120HD
STMicroelectronics

IGBT 1200V 14A 75W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
  • Power - Max: 75W
  • Switching Energy: 236µJ (on), 290µJ (off)
  • Input Type: Standard
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 15ns/118ns
  • Test Condition: 800V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 51ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封裝: TO-220-3
庫存15,072
1200V
14A
20A
2.8V @ 15V, 3A
75W
236µJ (on), 290µJ (off)
Standard
24nC
15ns/118ns
800V, 3A, 10 Ohm, 15V
51ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
IKD03N60RF
Infineon Technologies

IGBT 600V 5A 53.6W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 5A
  • Current - Collector Pulsed (Icm): 7.5A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
  • Power - Max: 53.6W
  • Switching Energy: 90µJ
  • Input Type: Standard
  • Gate Charge: 17.1nC
  • Td (on/off) @ 25°C: 10ns/128ns
  • Test Condition: 400V, 2.5A, 68 Ohm, 15V
  • Reverse Recovery Time (trr): 31ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存6,592
600V
5A
7.5A
2.5V @ 15V, 2.5A
53.6W
90µJ
Standard
17.1nC
10ns/128ns
400V, 2.5A, 68 Ohm, 15V
31ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
FGB20N60SFD_F085
Fairchild/ON Semiconductor

IGBT 600V 40A 208W D2PAK

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 20A
  • Power - Max: 208W
  • Switching Energy: 310µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 63nC
  • Td (on/off) @ 25°C: 10ns/90ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 111ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK (TO-263)
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,312
600V
40A
60A
2.85V @ 15V, 20A
208W
310µJ (on), 130µJ (off)
Standard
63nC
10ns/90ns
400V, 20A, 10 Ohm, 15V
111ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK (TO-263)
STGB14NC60KDT4
STMicroelectronics

IGBT 600V 25A 80W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 25A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
  • Power - Max: 80W
  • Switching Energy: 82µJ (on), 155µJ (off)
  • Input Type: Standard
  • Gate Charge: 34.4nC
  • Td (on/off) @ 25°C: 22.5ns/116ns
  • Test Condition: 390V, 7A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存17,586
600V
25A
50A
2.5V @ 15V, 7A
80W
82µJ (on), 155µJ (off)
Standard
34.4nC
22.5ns/116ns
390V, 7A, 10 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXA20RG1200DHG-TUB
IXYS

IGBT 1200V 32A 125W SMPD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 32 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 125 W
  • Switching Energy: 1.55mJ (on), 1.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 48 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 15A, 56Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-SMD Module
  • Supplier Device Package: ISOPLUS-SMPD™.B
封裝: -
Request a Quote
1200 V
32 A
-
2.1V @ 15V, 15A
125 W
1.55mJ (on), 1.7mJ (off)
Standard
48 nC
-
600V, 15A, 56Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
9-SMD Module
ISOPLUS-SMPD™.B
SIGC18T60SNCX1SA4
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 36ns/250ns
  • Test Condition: 400V, 20A, 16Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
20 A
60 A
2.5V @ 15V, 20A
-
-
Standard
-
36ns/250ns
400V, 20A, 16Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
RGCL80TS60DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 600V 65A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 65 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 148 W
  • Switching Energy: 1.11mJ (on), 1.68mJ (off)
  • Input Type: Standard
  • Gate Charge: 98 nC
  • Td (on/off) @ 25°C: 53ns/227ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封裝: -
Request a Quote
600 V
65 A
160 A
1.8V @ 15V, 40A
148 W
1.11mJ (on), 1.68mJ (off)
Standard
98 nC
53ns/227ns
400V, 40A, 10Ohm, 15V
58 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
HGT1S15N120C3
Harris Corporation

35A, 1200V, N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 35 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
  • Power - Max: 164 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 100 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: TO-262 (I2PAK)
封裝: -
Request a Quote
1200 V
35 A
120 A
3.5V @ 15V, 15A
164 W
-
Standard
100 nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262 (I2PAK)
IGTM10N50
Harris Corporation

N CHANNEL IGBT FOR SWITCHING APP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 500 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
封裝: -
Request a Quote
500 V
10 A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-204AA, TO-3
TO-3
AIKBE50N65RF5ATMA1
Infineon Technologies

IGBT TRENCH FS 650V 96A TO263-7

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 96 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 326 W
  • Switching Energy: 0.12mJ (on), 0.09mJ (off)
  • Input Type: Standard
  • Gate Charge: 108 nC
  • Td (on/off) @ 25°C: 16.8ns/136ns
  • Test Condition: 400V, 25A, 9Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package: PG-TO263-7-U04
封裝: -
庫存201
650 V
96 A
150 A
2.1V @ 15V, 50A
326 W
0.12mJ (on), 0.09mJ (off)
Standard
108 nC
16.8ns/136ns
400V, 25A, 9Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7-U04
AOK20B120D1
Alpha & Omega Semiconductor Inc.

IGBT 1200V 20A TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
  • Power - Max: 340 W
  • Switching Energy: 940µJ (off)
  • Input Type: Standard
  • Gate Charge: 67.5 nC
  • Td (on/off) @ 25°C: -/152ns
  • Test Condition: 600V, 20A, 15Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: -
Request a Quote
1200 V
40 A
80 A
1.8V @ 15V, 20A
340 W
940µJ (off)
Standard
67.5 nC
-/152ns
600V, 20A, 15Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
SIGC07T60SNCX7SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 24ns/248ns
  • Test Condition: 400V, 6A, 50Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
6 A
18 A
2.5V @ 15V, 6A
-
-
Standard
-
24ns/248ns
400V, 6A, 50Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
MGP7N60ED
onsemi

IGBT, 10A, 600V, N-CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXGP28N60A3
IXYS

IGBT

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 170 A
  • Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
  • Power - Max: 190 W
  • Switching Energy: 700µJ (on), 2.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 66 nC
  • Td (on/off) @ 25°C: 18ns/300ns
  • Test Condition: 480V, 24A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 26 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封裝: -
庫存90
600 V
75 A
170 A
1.4V @ 15V, 24A
190 W
700µJ (on), 2.4mJ (off)
Standard
66 nC
18ns/300ns
480V, 24A, 10Ohm, 15V
26 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
RGTH80TS65GC13
Rohm Semiconductor

IGBT TRNCH FIELD 650V 70A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 70 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 234 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 79 nC
  • Td (on/off) @ 25°C: 34ns/120ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
封裝: -
庫存1,800
650 V
70 A
160 A
2.1V @ 15V, 40A
234 W
-
Standard
79 nC
34ns/120ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
FGY75T120SQDN
onsemi

IGBT 1200V 75A UFS

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
  • Power - Max: 790 W
  • Switching Energy: 6.25mJ (on), 1.96mJ (off)
  • Input Type: Standard
  • Gate Charge: 399 nC
  • Td (on/off) @ 25°C: 64ns/332ns
  • Test Condition: 600V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 99 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247-3
封裝: -
庫存1,032
1200 V
150 A
300 A
1.95V @ 15V, 75A
790 W
6.25mJ (on), 1.96mJ (off)
Standard
399 nC
64ns/332ns
600V, 75A, 10Ohm, 15V
99 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
TO-247-3