頁 84 - 電晶體 - IGBT - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - IGBT - 單

記錄 4,424
頁  84/158
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封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRGP4262D-EPBF
Infineon Technologies

IGBT 650V 60A 250W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 520µJ (on), 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: 24ns/73ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 170ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封裝: TO-247-3
庫存103,464
650V
60A
96A
2.1V @ 15V, 24A
250W
520µJ (on), 240µJ (off)
Standard
70nC
24ns/73ns
400V, 24A, 10 Ohm, 15V
170ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
hot IHW30N120R2
Infineon Technologies

IGBT 1200V 60A 390W TO247-3

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
  • Power - Max: 390W
  • Switching Energy: 3.1mJ
  • Input Type: Standard
  • Gate Charge: 198nC
  • Td (on/off) @ 25°C: -/792ns
  • Test Condition: 600V, 30A, 28 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: TO-247-3
庫存390,024
1200V
60A
90A
1.8V @ 15V, 30A
390W
3.1mJ
Standard
198nC
-/792ns
600V, 30A, 28 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
SGP30N60XKSA1
Infineon Technologies

IGBT 600V 41A 250W TO263

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 112A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 1.29mJ
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 44ns/291ns
  • Test Condition: 400V, 30A, 11 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存4,512
600V
41A
112A
2.4V @ 15V, 30A
250W
1.29mJ
Standard
140nC
44ns/291ns
400V, 30A, 11 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRG4PH20KD
Infineon Technologies

IGBT 1200V 11A 60W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 22A
  • Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
  • Power - Max: 60W
  • Switching Energy: 620µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 28nC
  • Td (on/off) @ 25°C: 50ns/100ns
  • Test Condition: 800V, 5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 51ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存7,824
1200V
11A
22A
4.3V @ 15V, 5A
60W
620µJ (on), 300µJ (off)
Standard
28nC
50ns/100ns
800V, 5A, 50 Ohm, 15V
51ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
RJH60D6DPM-00#T1
Renesas Electronics America

IGBT 600V 80A 50W TO-3PFM

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
  • Power - Max: 50W
  • Switching Energy: 850µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 104nC
  • Td (on/off) @ 25°C: 50ns/160ns
  • Test Condition: 300V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
封裝: TO-3PFM, SC-93-3
庫存2,016
600V
80A
-
2.2V @ 15V, 40A
50W
850µJ (on), 600µJ (off)
Standard
104nC
50ns/160ns
300V, 40A, 5 Ohm, 15V
100ns
150°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
STGD10NC60KT4
STMicroelectronics

IGBT 600V 20A 60W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
  • Power - Max: 60W
  • Switching Energy: 55µJ (on), 85µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 17ns/72ns
  • Test Condition: 390V, 5A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存2,416
600V
20A
30A
2.5V @ 15V, 5A
60W
55µJ (on), 85µJ (off)
Standard
19nC
17ns/72ns
390V, 5A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot IXSH30N60CD1
IXYS

IGBT 600V 55A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 200W
  • Switching Energy: 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 30ns/90ns
  • Test Condition: 480V, 30A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXSH)
封裝: TO-247-3
庫存390,000
600V
55A
110A
2.5V @ 15V, 30A
200W
700µJ (off)
Standard
100nC
30ns/90ns
480V, 30A, 4.7 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXSH)
NGTB30N120L2WG
ON Semiconductor

IGBT 1200V 60A 534W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 534W
  • Switching Energy: 4.4mJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 116ns/285ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 450ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存7,504
1200V
60A
120A
1.9V @ 15V, 30A
534W
4.4mJ (on), 1.4mJ (off)
Standard
310nC
116ns/285ns
600V, 30A, 10 Ohm, 15V
450ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IXGH40N60A3D1
IXYS

IGBT 600V TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存2,800
600V
-
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGT24N60C
IXYS

IGBT 600V 48A 150W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
  • Power - Max: 150W
  • Switching Energy: 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 15ns/75ns
  • Test Condition: 480V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
庫存6,112
600V
48A
96A
2.5V @ 15V, 24A
150W
240µJ (off)
Standard
55nC
15ns/75ns
480V, 24A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
NGTD30T120F2SWK
ON Semiconductor

IGBT TRENCH FIELD STOP 1200V DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: Die
庫存3,504
1200V
-
200A
2.4V @ 15V, 40A
-
-
Standard
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
Die
Die
IRGR2B60KDPBF
Infineon Technologies

IGBT 600V 6.3A 35W DPAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6.3A
  • Current - Collector Pulsed (Icm): 8A
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
  • Power - Max: 35W
  • Switching Energy: 74µJ (on), 39µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 11ns/150ns
  • Test Condition: 400V, 2A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存14,808
600V
6.3A
8A
2.25V @ 15V, 2A
35W
74µJ (on), 39µJ (off)
Standard
12nC
11ns/150ns
400V, 2A, 100 Ohm, 15V
68ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IXGT32N170
IXYS

IGBT 1700V 75A 350W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
  • Power - Max: 350W
  • Switching Energy: 11mJ (off)
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 45ns/270ns
  • Test Condition: 1020V, 32A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
庫存3,776
1700V
75A
200A
3.3V @ 15V, 32A
350W
11mJ (off)
Standard
155nC
45ns/270ns
1020V, 32A, 2.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
FGH40T120SMDL4
Fairchild/ON Semiconductor

IGBT 1200V 80A 555W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 555W
  • Switching Energy: 2.24mJ (on), 1.02mJ (off)
  • Input Type: Standard
  • Gate Charge: 370nC
  • Td (on/off) @ 25°C: 44ns/464ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 65ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4L
封裝: TO-247-4
庫存7,308
1200V
80A
160A
2.4V @ 15V, 40A
555W
2.24mJ (on), 1.02mJ (off)
Standard
370nC
44ns/464ns
600V, 40A, 10 Ohm, 15V
65ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4L
hot STGW30NC60W
STMicroelectronics

IGBT 600V 60A 200W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 305µJ (on), 181µJ (off)
  • Input Type: Standard
  • Gate Charge: 102nC
  • Td (on/off) @ 25°C: 29.5ns/118ns
  • Test Condition: 390V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存93,684
600V
60A
150A
2.5V @ 15V, 20A
200W
305µJ (on), 181µJ (off)
Standard
102nC
29.5ns/118ns
390V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
STGB5H60DF
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, H S

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
  • Power - Max: 88W
  • Switching Energy: 56µJ (on), 78.5µJ (off)
  • Input Type: Standard
  • Gate Charge: 43nC
  • Td (on/off) @ 25°C: 30ns/140ns
  • Test Condition: 400V, 5A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 134.5ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存21,072
600V
10A
20A
1.95V @ 15V, 5A
88W
56µJ (on), 78.5µJ (off)
Standard
43nC
30ns/140ns
400V, 5A, 47 Ohm, 15V
134.5ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IHW50N65R5XKSA1
Infineon Technologies

IGBT 650V 80A 282W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
  • Power - Max: 282W
  • Switching Energy: 740µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 230nC
  • Td (on/off) @ 25°C: 26ns/220ns
  • Test Condition: 400V, 25A, 8 Ohm, 15V
  • Reverse Recovery Time (trr): 95ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: TO-247-3
庫存14,508
650V
80A
150A
1.7V @ 15V, 50A
282W
740µJ (on), 180µJ (off)
Standard
230nC
26ns/220ns
400V, 25A, 8 Ohm, 15V
95ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
STGD5H60DF
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, H S

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
  • Power - Max: 83W
  • Switching Energy: 56µJ (on), 78.5µJ (off)
  • Input Type: Standard
  • Gate Charge: 43nC
  • Td (on/off) @ 25°C: 30ns/140ns
  • Test Condition: 400V, 5A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 134.5ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存38,376
600V
10A
20A
1.95V @ 15V, 5A
83W
56µJ (on), 78.5µJ (off)
Standard
43nC
30ns/140ns
400V, 5A, 47 Ohm, 15V
134.5ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
hot HGTG30N60A4D
Fairchild/ON Semiconductor

IGBT 600V 75A 463W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
  • Power - Max: 463W
  • Switching Energy: 280µJ (on), 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: 25ns/150ns
  • Test Condition: 390V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 55ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存126,420
600V
75A
240A
2.6V @ 15V, 30A
463W
280µJ (on), 240µJ (off)
Standard
225nC
25ns/150ns
390V, 30A, 3 Ohm, 15V
55ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IXBA16N170AHV
IXYS

REVERSE CONDUCTING IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 16 A
  • Current - Collector Pulsed (Icm): 40 A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
  • Power - Max: 150 W
  • Switching Energy: 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 65 nC
  • Td (on/off) @ 25°C: 15ns/250ns
  • Test Condition: 1360V, 10A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 25 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
封裝: -
庫存42
1700 V
16 A
40 A
6V @ 15V, 10A
150 W
2.5mJ (off)
Standard
65 nC
15ns/250ns
1360V, 10A, 10Ohm, 15V
25 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
IKWH75N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
  • Power - Max: 341 W
  • Switching Energy: 2.42mJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 150 nC
  • Td (on/off) @ 25°C: 25ns/45ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 89 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-32
封裝: -
庫存642
650 V
80 A
300 A
1.65V @ 15V, 75A
341 W
2.42mJ (on), 1.4mJ (off)
Standard
150 nC
25ns/45ns
400V, 75A, 10Ohm, 15V
89 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-32
RJP3065DPP-90-T2F
Renesas Electronics Corporation

HIGH SPEED IGBT, 300V, 40A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IHW30N110R5XKSA1
Infineon Technologies

IGBT TRENCH 60A TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
  • Power - Max: 330 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 240 nC
  • Td (on/off) @ 25°C: -/350ns
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: -
庫存645
-
60 A
90 A
1.85V @ 15V, 30A
330 W
-
Standard
240 nC
-/350ns
-
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
RGTH00TS65GC13
Rohm Semiconductor

IGBT TRENCH FIELD 650V 85A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 85 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 277 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 94 nC
  • Td (on/off) @ 25°C: 39ns/143ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: -
庫存1,794
650 V
85 A
200 A
2.1V @ 15V, 50A
277 W
-
Standard
94 nC
39ns/143ns
400V, 50A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IXGT32N170-TRL
IXYS

IGBT 1700V 75A 350W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
  • Power - Max: 350 W
  • Switching Energy: 11mJ (off)
  • Input Type: Standard
  • Gate Charge: 155 nC
  • Td (on/off) @ 25°C: 45ns/270ns
  • Test Condition: 1020V, 32A, 2.7Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA
封裝: -
庫存6,666
1700 V
75 A
200 A
3.3V @ 15V, 32A
350 W
11mJ (off)
Standard
155 nC
45ns/270ns
1020V, 32A, 2.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268AA
FGD3040G2-F085C
onsemi

IGBT 400V 41A TO252

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 41 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: 0.9µs/4.8µs
  • Test Condition: 300V, 6.5A, 1000Ohm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
封裝: -
庫存7,320
400 V
41 A
-
1.25V @ 4V, 6A
150 W
-
Logic
21 nC
0.9µs/4.8µs
300V, 6.5A, 1000Ohm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
IXYY8N90C3-TRL
IXYS

IXYY8N90C3 TRL

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 48 A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
  • Power - Max: 125 W
  • Switching Energy: 460µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.3 nC
  • Td (on/off) @ 25°C: 16ns/40ns
  • Test Condition: 450V, 8A, 30Ohm, 15V
  • Reverse Recovery Time (trr): 20 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
封裝: -
Request a Quote
900 V
20 A
48 A
3V @ 15V, 8A
125 W
460µJ (on), 180µJ (off)
Standard
13.3 nC
16ns/40ns
450V, 8A, 30Ohm, 15V
20 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
DGTD65T40S1PT
Diodes Incorporated

IGBT 600V-X TO247 TUBE 0.45K

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 341 W
  • Switching Energy: 1.15mJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 219 nC
  • Td (on/off) @ 25°C: 58ns/245ns
  • Test Condition: 400V, 40A, 7.9Ohm, 15V
  • Reverse Recovery Time (trr): 145 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: -
Request a Quote
650 V
80 A
160 A
2.4V @ 15V, 40A
341 W
1.15mJ (on), 350µJ (off)
Standard
219 nC
58ns/245ns
400V, 40A, 7.9Ohm, 15V
145 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247