頁 86 - 電晶體 - IGBT - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - IGBT - 單

記錄 4,424
頁  86/158
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庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGP4790-EPBF
Infineon Technologies

IGBT 650V TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 140A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 455W
  • Switching Energy: 2.5mJ (on), 2.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 50ns/200ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封裝: TO-247-3
庫存4,432
650V
140A
225A
2V @ 15V, 75A
455W
2.5mJ (on), 2.2mJ (off)
Standard
210nC
50ns/200ns
400V, 75A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
NGTB30N120IHSWG
ON Semiconductor

IGBT 1200V 30A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Power - Max: 192W
  • Switching Energy: 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: -/210ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存5,088
1200V
60A
200A
2.4V @ 15V, 30A
192W
1mJ (off)
Standard
220nC
-/210ns
600V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
RJH60F5BDPQ-A0#T0
Renesas Electronics America

IGBT 600V 80A 260.4W TO-247A

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 260.4W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 53ns/95ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247A
封裝: TO-247-3
庫存4,448
600V
80A
-
1.8V @ 15V, 40A
260.4W
-
Standard
-
53ns/95ns
400V, 30A, 5 Ohm, 15V
25ns
150°C (TJ)
Through Hole
TO-247-3
TO-247A
IXGH38N60U1
IXYS

IGBT 600V 76A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 76A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 38A
  • Power - Max: 200W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存2,528
600V
76A
-
1.8V @ 15V, 38A
200W
-
Standard
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD (IXGH)
FGA70N30TTU
Fairchild/ON Semiconductor

IGBT 300V 201W TO3P

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 20A
  • Power - Max: 201W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 125nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存5,472
300V
-
160A
1.5V @ 15V, 20A
201W
-
Standard
125nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
IXST40N60B
IXYS

IGBT 600V 75A 280W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
  • Power - Max: 280W
  • Switching Energy: 1.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 50ns/110ns
  • Test Condition: 480V, 40A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
庫存3,328
600V
75A
150A
2.2V @ 15V, 40A
280W
1.8mJ (off)
Standard
190nC
50ns/110ns
480V, 40A, 2.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
IXGC16N60C2
IXYS

IGBT 600V 20A 63W ISOPLUS220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
  • Power - Max: 63W
  • Switching Energy: 60µJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 25ns/60ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS220?
  • Supplier Device Package: ISOPLUS220?
封裝: ISOPLUS220?
庫存5,120
600V
20A
100A
3V @ 15V, 12A
63W
60µJ (off)
Standard
32nC
25ns/60ns
400V, 12A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS220?
ISOPLUS220?
SGP15N120XKSA1
Infineon Technologies

IGBT 1200V 30A 198W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
  • Power - Max: 198W
  • Switching Energy: 1.9mJ
  • Input Type: Standard
  • Gate Charge: 130nC
  • Td (on/off) @ 25°C: 18ns/580ns
  • Test Condition: 800V, 15A, 33 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封裝: TO-220-3
庫存7,040
1200V
30A
52A
3.6V @ 15V, 15A
198W
1.9mJ
Standard
130nC
18ns/580ns
800V, 15A, 33 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
STGWA60V60DF
STMicroelectronics

IGBT BIPO 600V 60A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 375W
  • Switching Energy: 750µJ (on), 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 334nC
  • Td (on/off) @ 25°C: 60ns/208ns
  • Test Condition: 400V, 60A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 74ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封裝: TO-247-3
庫存7,072
600V
80A
240A
2.3V @ 15V, 60A
375W
750µJ (on), 550µJ (off)
Standard
334nC
60ns/208ns
400V, 60A, 4.7 Ohm, 15V
74ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
IRG4IBC30WPBF
Infineon Technologies

IGBT 600V 17A 45W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 17A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 45W
  • Switching Energy: 130µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 25ns/99ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
封裝: TO-220-3 Full Pack
庫存5,120
600V
17A
92A
2.7V @ 15V, 12A
45W
130µJ (on), 130µJ (off)
Standard
51nC
25ns/99ns
480V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
IXBX25N250
IXYS

IGBT 2500V 55A 300W PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 25A
  • Power - Max: 300W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 103nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.6µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封裝: TO-247-3
庫存5,424
2500V
55A
180A
3.3V @ 15V, 25A
300W
-
Standard
103nC
-
-
1.6µs
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IKW50N60DTPXKSA1
Infineon Technologies

IGBT 600V 80A 319.2W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
  • Power - Max: 319.2W
  • Switching Energy: 1.53mJ (on), 850µJ (off)
  • Input Type: Standard
  • Gate Charge: 249nC
  • Td (on/off) @ 25°C: 20ns/215ns
  • Test Condition: 400V, 50A, 7 Ohm, 15V
  • Reverse Recovery Time (trr): 115ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: TO-247-3
庫存4,304
600V
80A
150A
1.8V @ 15V, 50A
319.2W
1.53mJ (on), 850µJ (off)
Standard
249nC
20ns/215ns
400V, 50A, 7 Ohm, 15V
115ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IXYH82N120C3
IXYS

IGBT 1200V 200A 1250W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Current - Collector Pulsed (Icm): 380A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
  • Power - Max: 1250W
  • Switching Energy: 4.95mJ (on), 2.78mJ (off)
  • Input Type: Standard
  • Gate Charge: 215nC
  • Td (on/off) @ 25°C: 29ns/192ns
  • Test Condition: 600V, 80A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
封裝: TO-247-3
庫存6,348
1200V
200A
380A
3.2V @ 15V, 82A
1250W
4.95mJ (on), 2.78mJ (off)
Standard
215nC
29ns/192ns
600V, 80A, 2 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
STGP100N30
STMicroelectronics

IGBT 330V 90A 250W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: 250W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/134ns
  • Test Condition: 180V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封裝: TO-220-3
庫存19,656
330V
90A
-
2.5V @ 15V, 50A
250W
-
Standard
-
-/134ns
180V, 25A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
STGW40S120DF3
STMicroelectronics

IGBT 1200V 40A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
  • Power - Max: 468W
  • Switching Energy: 1.43mJ (on), 3.83mJ (off)
  • Input Type: Standard
  • Gate Charge: 129nC
  • Td (on/off) @ 25°C: 35ns/148ns
  • Test Condition: 600V, 40A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 355ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存14,148
1200V
80A
160A
2.15V @ 15V, 40A
468W
1.43mJ (on), 3.83mJ (off)
Standard
129nC
35ns/148ns
600V, 40A, 15 Ohm, 15V
355ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot IRG4PF50WPBF
Infineon Technologies

IGBT 900V 51A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 51A
  • Current - Collector Pulsed (Icm): 204A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
  • Power - Max: 200W
  • Switching Energy: 190µJ (on), 1.06mJ (off)
  • Input Type: Standard
  • Gate Charge: 160nC
  • Td (on/off) @ 25°C: 29ns/110ns
  • Test Condition: 720V, 28A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存55,380
900V
51A
204A
2.7V @ 15V, 28A
200W
190µJ (on), 1.06mJ (off)
Standard
160nC
29ns/110ns
720V, 28A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IXBT42N170
IXYS

IGBT 1700V 80A 360W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 42A
  • Power - Max: 360W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 188nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.32µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
庫存8,124
1700V
80A
300A
2.8V @ 15V, 42A
360W
-
Standard
188nC
-
-
1.32µs
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
APT45GP120B2DQ2G
Microsemi Corporation

IGBT 1200V 113A 625W TMAX

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 113A
  • Current - Collector Pulsed (Icm): 170A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
  • Power - Max: 625W
  • Switching Energy: 900µJ (on), 905µJ (off)
  • Input Type: Standard
  • Gate Charge: 185nC
  • Td (on/off) @ 25°C: 18ns/100ns
  • Test Condition: 600V, 45A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
封裝: TO-247-3 Variant
庫存7,512
1200V
113A
170A
3.9V @ 15V, 45A
625W
900µJ (on), 905µJ (off)
Standard
185nC
18ns/100ns
600V, 45A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
IXYP20N120C3
IXYS

IGBT 1200V 40A 278W TO-220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
  • Power - Max: 278W
  • Switching Energy: 1.3mJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 20ns/90ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存19,932
1200V
40A
96A
3.4V @ 15V, 20A
278W
1.3mJ (on), 500µJ (off)
Standard
53nC
20ns/90ns
600V, 20A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
DGTD120T40S1PT
Diodes Incorporated

IGBT 1200V-X TO247 TUBE 0.45K

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 357 W
  • Switching Energy: 1.96mJ (on), 540µJ (off)
  • Input Type: Standard
  • Gate Charge: 341 nC
  • Td (on/off) @ 25°C: 65ns/308ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 100 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: -
Request a Quote
1200 V
80 A
160 A
2.4V @ 15V, 40A
357 W
1.96mJ (on), 540µJ (off)
Standard
341 nC
65ns/308ns
600V, 40A, 10Ohm, 15V
100 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
PCFG75T65MQF
onsemi

IGBT FIELD STOP 650V WAFER

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 144 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Wafer
封裝: -
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650 V
-
300 A
1.9V @ 15V, 60A
-
-
Standard
144 nC
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Wafer
SIGC25T60NCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 30A, 8.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
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600 V
30 A
90 A
2.5V @ 15V, 30A
-
-
Standard
-
21ns/110ns
300V, 30A, 8.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SGP5N60RUFTU
Fairchild Semiconductor

IGBT, 8A, 600V, N-CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 8 A
  • Current - Collector Pulsed (Icm): 15 A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 5A
  • Power - Max: 60 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 24 nC
  • Td (on/off) @ 25°C: 13ns/34ns
  • Test Condition: 300V, 5A, 40Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封裝: -
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600 V
8 A
15 A
2.8V @ 15V, 5A
60 W
-
Standard
24 nC
13ns/34ns
300V, 5A, 40Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
SIGC109T120R3LEX1SA2
Infineon Technologies

IGBT 1200V 100A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
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1200 V
-
300 A
2.1V @ 15V, 100A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
BIDW40N65H5
Bourns Inc.

IGBT TRENCH FS 650V 80A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 300 W
  • Switching Energy: 1.9mJ (on), 0.52mJ (off)
  • Input Type: Standard
  • Gate Charge: 111 nC
  • Td (on/off) @ 25°C: 28ns/116ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 165 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: -
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650 V
80 A
120 A
2.1V @ 15V, 40A
300 W
1.9mJ (on), 0.52mJ (off)
Standard
111 nC
28ns/116ns
400V, 40A, 10Ohm, 15V
165 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IKW15N120H3FKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 30A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 217 W
  • Switching Energy: 1.55mJ
  • Input Type: Standard
  • Gate Charge: 75 nC
  • Td (on/off) @ 25°C: 21ns/260ns
  • Test Condition: 600V, 15A, 35Ohm, 15V
  • Reverse Recovery Time (trr): 260 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
封裝: -
庫存837
1200 V
30 A
60 A
2.4V @ 15V, 15A
217 W
1.55mJ
Standard
75 nC
21ns/260ns
600V, 15A, 35Ohm, 15V
260 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
AOK30B120D2
Alpha & Omega Semiconductor Inc.

IGBT 1200V 30A TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
  • Power - Max: 340 W
  • Switching Energy: 1.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 67 nC
  • Td (on/off) @ 25°C: -/115ns
  • Test Condition: 600V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: -
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1200 V
60 A
120 A
2.2V @ 15V, 30A
340 W
1.28mJ (off)
Standard
67 nC
-/115ns
600V, 30A, 10Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
STGYA75H120DF2
STMicroelectronics

IGBT TRENCH FS 1200V 150A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
  • Power - Max: 750 W
  • Switching Energy: 4.3mJ (on), 3.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 313 nC
  • Td (on/off) @ 25°C: 61ns/366ns
  • Test Condition: 600V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 356 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: -
庫存1,758
1200 V
150 A
300 A
2.6V @ 15V, 75A
750 W
4.3mJ (on), 3.9mJ (off)
Standard
313 nC
61ns/366ns
600V, 75A, 10Ohm, 15V
356 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247